Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

Transient spectral hole burning spectroscopy of exciton spin flip processes in In(Ga)As quantum dots

Thomas G. Muller, G. Strasser, K. Unterrainer

Published Jan 1, 2005• 0 citations
Publisher

Abstract

Transient spectral hole burning measurements are performed on InAs/GaAs self-assembled quantum dots. In the case of cross-polarized pump and probe pulses, a spectral "antihole" emerges due to relaxation of the exciton spin.
DOI
10.1109/leos.2005.1547866

Related papers

Ultrafast spectral hole burning spectroscopy of exciton spin flip processes in InAs∕GaAs quantum dots

Thomas G. Muller, G. Strasser, K. Unterrainer

The exciton spin relaxation within the radiative doublet of the exciton ground state in InAs∕GaAs self-assembled quantum dots is studied via an ultrafast spectral hole burning technique. In the case of cross-polarized pump and probe pulses a spectral “antihole” emerges due to relaxation of the exciton spin. The measured relaxation time decreases rapidly from 1.15ns at T=5Kto90ps at 90K, suggesting exciton-acoustic phonon interaction as the underlying spin relaxation mechanism.

Applied Physics Letters•May 8, 2006•12 citations

Exciton spin relaxation in semiconductor quantum dots

Thomas G. Muller, G. Strasser, K. Unterrainer

The spin relaxation within the radiative doublet of the exciton ground state in InAs/GaAs quantum dots is studied via ultrafast spectral hole burning spectroscopy. A biexcitonic resonance emerges due to relaxation of the exciton spin.

Conference on Lasers and Electro-Optics•Jan 1, 2006•0 citations

Two-photon spectral hole burning spectroscopy of InAs/GaAs quantum dots

Thomas Moldaschl, Wolfgang Parz, Thomas G. Muller +3 more

Femtosecond spectral hole burning experiments were performed on InAs/GaAs quantum dots to investigate the influence of high excitation intensities. The observation of additional spectral holes, as well as distinct absorption line broadening are both attributed to two-photon absorption processes. These spectral holes can be unambiguously assigned to degenerate two-photon biexciton creation, whereas the absorption line broadening is a direct result of Coulomb renormalization, initiated by carriers created through two-photon absorption in the surrounding GaAs crystal matrix and the InAs wetting layer.

Applied Physics Letters•Jul 5, 2010•1 citation

Transient nonlinear spectroscopy of indium arsenide quantum dots: Coherent and incoherent dynamics of confined excitons.

Anthony S. Lenihan

The three-dimensional confinement created by the ultrasmall semiconductor structures known as quantum dots greatly modifies the optical properties of the spatially localized carriers. These systems are presently of great interest to the research community, both for the improved understanding of the physics of confined structures, and for the potential applications of these systems to areas such as optoelectronics and quantum computing. Here, the techniques of transient coherent nonlinear optical spectroscopy are applied to the investigation of excitons confined within InAs/GaAs self-assembled quantum dots. These methods provide a powerful tool for the study of dynamic processes in these novel materials. The nonlinear measurements are based on the differential transmission experimental geometry, and utilize ultrafast pulsed lasers in order to temporally resolve the carrier dynamics after excitation. The experiments performed here are resonant with the ground state absorption of the quantum dots, as evidenced by comparison with the photoluminescence measurements which are used to characterize the sample. The incoherent relaxation dynamics of the population of photoexcited excitons are examined, allowing for a determination of both the lifetime of the excitons and the time scale for relaxation between the two polarization eigenstates of the system. The three-dimensional quantum confinement results in the suppression of these relaxation processes, as predicted. The use of coherent spectroscopic techniques allows for the first unambiguous demonstration of an optically-induced nonradiative Raman coherence in these quantum dots. Simultaneous excitation of both polarization states of the exciton results in a coherent superposition state, whose temporal evolution is observed through the homodyne-detection scheme. In these transient experiments, this is manifested as a beating in the nonlinear response, which allows us to directly measure the fine-structure splitting between the polarization states. Utilizing optical pulse shaping techniques, transient spectral hole burning is performed, which allows for the nonlinear response to be spectrally resolved. As expected for the strongly confined quantum dot excitons, the results show that diffusion among the localized states is not a significant effect. Temperature dependent measurements show that at elevated temperatures, extra dephasing processes, potentially related to acoustic phonon scattering, become important. Finally, this technique allows for the first direct observation of the induced absorption from the exciton to biexciton transition in these InAs quantum dots, and a measurement of the associated binding energy. These results lay the foundation for future studies in this material system, and for the possible development of quantum logic devices utilizing quantum dots.

•Jan 1, 2002•0 citations

High-resolution spectral hole burning in InGaAs-GaAs quantum dots

Joseph J. Berry, Martin J. Stevens, Richard P. Mirin +1 more

We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs-GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of the homogeneous InGaAs-GaAs quantum dot line. We find that at a temperature of 9.8 K and over the majority of the pump powers considered, the spectral hole signal is well fit by a single Lorentizian line shape. Analysis of the power broadening yields a full width at half maximum of 0.74μeV for the homogeneous linewidth and a corresponding coherence time T2 of 1.76 ns.

Applied Physics Letters•Feb 6, 2006•26 citations

Spectral Zeeman hole burning in a quantum dot ensemble

Gang Chen, E. T. Batteh, Duncan G. Steel +2 more

Spectral hole burning experiments based on high-resolution magneto-CW four-wave mixing in the phase conjugate geometry show that both the spectral and spatial diffusion of excitons is negligible in the GaAs quantum dot system formed by interface disorder. Due to the strong Coulomb coupling, Zeeman spectral hole burning is observed when we resonantly excite one of the two orthogonally polarized excitons confined to each dot by two copolarized and frequency-degenerate fields and then probe the system by a third beam that is of opposite polarization and a Zeeman splitting away (in frequency). The experiments allow for a measure of the exciton decay rates and g factor.

Physical review. B, Condensed matter•Sep 11, 2003•3 citations
Femtosecond spectral hole burning experiments were performed on InAs/GaAs quantum dots to investigate the influence of high excitation intensities. The observation of additional spectral holes, as well as distinct absorption line broadening are both attributed to two-photon absorption processes. These spectral holes can be unambiguously assigned to degenerate two-photon biexciton creation, whereas the absorption line broadening is a direct result of Coulomb renormalization, initiated by carriers created through two-photon absorption in the surrounding GaAs crystal matrix and the InAs wetting layer.
The three-dimensional confinement created by the ultrasmall semiconductor structures known as quantum dots greatly modifies the optical properties of the spatially localized carriers. These systems are presently of great interest to the research community, both for the improved understanding of the physics of confined structures, and for the potential applications of these systems to areas such as optoelectronics and quantum computing. Here, the techniques of transient coherent nonlinear optical spectroscopy are applied to the investigation of excitons confined within InAs/GaAs self-assembled quantum dots. These methods provide a powerful tool for the study of dynamic processes in these novel materials. The nonlinear measurements are based on the differential transmission experimental geometry, and utilize ultrafast pulsed lasers in order to temporally resolve the carrier dynamics after excitation. The experiments performed here are resonant with the ground state absorption of the quantum dots, as evidenced by comparison with the photoluminescence measurements which are used to characterize the sample. The incoherent relaxation dynamics of the population of photoexcited excitons are examined, allowing for a determination of both the lifetime of the excitons and the time scale for relaxation between the two polarization eigenstates of the system. The three-dimensional quantum confinement results in the suppression of these relaxation processes, as predicted. The use of coherent spectroscopic techniques allows for the first unambiguous demonstration of an optically-induced nonradiative Raman coherence in these quantum dots. Simultaneous excitation of both polarization states of the exciton results in a coherent superposition state, whose temporal evolution is observed through the homodyne-detection scheme. In these transient experiments, this is manifested as a beating in the nonlinear response, which allows us to directly measure the fine-structure splitting between the polarization states. Utilizing optical pulse shaping techniques, transient spectral hole burning is performed, which allows for the nonlinear response to be spectrally resolved. As expected for the strongly confined quantum dot excitons, the results show that diffusion among the localized states is not a significant effect. Temperature dependent measurements show that at elevated temperatures, extra dephasing processes, potentially related to acoustic phonon scattering, become important. Finally, this technique allows for the first direct observation of the induced absorption from the exciton to biexciton transition in these InAs quantum dots, and a measurement of the associated binding energy. These results lay the foundation for future studies in this material system, and for the possible development of quantum logic devices utilizing quantum dots.
We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs-GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of the homogeneous InGaAs-GaAs quantum dot line. We find that at a temperature of 9.8 K and over the majority of the pump powers considered, the spectral hole signal is well fit by a single Lorentizian line shape. Analysis of the power broadening yields a full width at half maximum of 0.74μeV for the homogeneous linewidth and a corresponding coherence time T2 of 1.76 ns.
Spectral hole burning experiments based on high-resolution magneto-CW four-wave mixing in the phase conjugate geometry show that both the spectral and spatial diffusion of excitons is negligible in the GaAs quantum dot system formed by interface disorder. Due to the strong Coulomb coupling, Zeeman spectral hole burning is observed when we resonantly excite one of the two orthogonally polarized excitons confined to each dot by two copolarized and frequency-degenerate fields and then probe the system by a third beam that is of opposite polarization and a Zeeman splitting away (in frequency). The experiments allow for a measure of the exciton decay rates and g factor.