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Applied Physics Letters

High-resolution spectral hole burning in InGaAs-GaAs quantum dots

Joseph J. Berry, Martin J. Stevens, Richard P. Mirin, Kevin L. Silverman

Published Feb 6, 2006• 26 citations
Publisher

Abstract

We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs-GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of the homogeneous InGaAs-GaAs quantum dot line. We find that at a temperature of 9.8 K and over the majority of the pump powers considered, the spectral hole signal is well fit by a single Lorentizian line shape. Analysis of the power broadening yields a full width at half maximum of 0.74μeV for the homogeneous linewidth and a corresponding coherence time T2 of 1.76 ns.

DOI
10.1063/1.2172291

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We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs-GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of the homogeneous InGaAs-GaAs quantum dot line. We find that at a temperature of 9.8 K and over the majority of the pump powers considered, the spectral hole signal is well fit by a single Lorentizian line shape. Analysis of the power broadening yields a full width at half maximum of 0.74μeV for the homogeneous linewidth and a corresponding coherence time T2 of 1.76 ns.
The Terahertz (THz) frequency domain is attractive for numerous applications including phonon spectroscopy, radio-astronomy, imaging, sensing and communication. Nevertheless the development of a compact, tunable, electrically driven room-temperature source operating in the THz band frequency [1-5 THz] remains a challenge. An alternative to low-temperature-cooled Quantum Cascade Lasers is the widely investigated photomixing technique which relies on semiconductor antenna fed by two laser fields beating at the targeted THz frequency. When a highly coherent CW emission is mandatory, a single laser cavity sustaining the oscillation of the two required laser fields is a very attractive approach. Indeed, the phase noises of the two optical fields being inherently correlated, the beatnote exhibits a high spectral purity. Following this paradigm, dual-frequency Quantum Wells (QWs) based Vertical External Cavity Surface Emitting Lasers (VECSELs) architectures have been successfully demonstrated [1][2][3]. Nevertheless, because of the inherent homogeneously broadened gain of QWs, the two laser modes suffer from strong coupling making it necessary to lift the spatial degeneracy inside the active medium. Moreover, the frequency detuning remains lower than in Quantum Dots (QDs). Accordingly, we have been exploring over the past years the benefits of using wider and potentially less homogeneously broadened gain medium such as Quantum Dots. To this aim, InAs QDs are grown on InP (311B) substrate, and characterized by photoluminescence and atomic force microscopy. The density (from 10^10 to 10^11 cm-2) and the size of QDs are carefully engineered while keeping a 1550 nm emission wavelength. To evaluate the potential of QDs for dual frequency oscillation, a critical parameter is the homogeneous linewidth. It is measured through Spectral Hole Burning (SHB) experiments using two tunable and continuous-wave lasers. In order to be as close as possible to the laser operation conditions, the SHB experiments are performed at high temperature levels and high carrier densities. In this talk, we will present our preliminary results from Spectral Hole Burning experiments conducted on both InAs/InP QDs and conventional InGaAs/InP QWs. The dedicated homemade measurement apparatus will be presented as well. This work is supported by the IDYLIC ANR project (ANR-15-CE24-0034-01).
At very low temperatures, the spread in the different environments of matrix embedded dye molecules results in an inhomogeneously broadened S1 ← S0 band. Spectroscopic techniques based on the appearence of optical zero phonon lines, such as fluorescence line narrowing, spectral hole-burning, and single molecule spectroscopy provide an experimental resolution limited by the homogeneous linewidth. From the investigation of the homogeneous line width as a function of different parameters (time, temperature) information on the guest host interactions responsible for the observed linewidth is obtained. Spectrally narrow features are extremely sensitive probes for external perturbations, such as electric fields, magnetic fields, or hydrostatic pressure.
Femtosecond spectral hole burning experiments were performed on InAs/GaAs quantum dots to investigate the influence of high excitation intensities. The observation of additional spectral holes, as well as distinct absorption line broadening are both attributed to two-photon absorption processes. These spectral holes can be unambiguously assigned to degenerate two-photon biexciton creation, whereas the absorption line broadening is a direct result of Coulomb renormalization, initiated by carriers created through two-photon absorption in the surrounding GaAs crystal matrix and the InAs wetting layer.
Summary form only given. Understanding dephasing in quantum dots, especially dephasing due to electron-phonon interactions, is essential for the use of quantum dots as artificial atoms in applications such as quantum information processing. In this paper, we report experimental studies on dephasing in CdSe/ZnS core/shell nanocrystals using high resolution spectral hole burning. These studies not only allow us to determine the homogeneous linewidth, but also reveal directly discrete acoustic phonon sidebands. The extremely small homogeneous linewidth (32 /spl mu/eV) obtained at low temperature along with the nonlinear temperature dependence of the homogeneous linewidth indicates that the quantization of acoustic phonon modes leads to strong suppression of dephasing associated with electron-phonon interactions in nanocrystals. The dependence of the spectral hole width on the modulation frequency also reveals exciton spectral migration occurring on a time scale of order of 100 /spl mu/s.