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Conference on Lasers and Electro-Optics

Temperature dependence of quantum dot homogeneous linewidth

Joseph J. Berry, Martin J. Stevens, Richard P. Mirin, Kevin L. Silverman

Published Jan 1, 2006• 0 citations
Publisher

Abstract

We examine the temperature dependence of the ground state homogeneous linewidth in InGaAs/GaAs quantum dots. Measurements using a high-resolution spectral hole burning technique are performed on quantum dots in a semiconductor waveguide.
DOI
10.1109/cleo.2006.4627931

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jun 5, 2002•0 citations
We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs-GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of the homogeneous InGaAs-GaAs quantum dot line. We find that at a temperature of 9.8 K and over the majority of the pump powers considered, the spectral hole signal is well fit by a single Lorentizian line shape. Analysis of the power broadening yields a full width at half maximum of 0.74μeV for the homogeneous linewidth and a corresponding coherence time T2 of 1.76 ns.
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We report systematic measurements of the linewidth enhancement factor (LEF) in an electrically pumped InGaAs quantum-dot (QD) amplifier in the temperature range from 50 K to room temperature. At injection currents below transparency, the value of the linewidth enhancement factor of the ground-state interband (excitonic) transition is between 0.4 and 1, and increases with increasing carrier density. Additionally, we investigate the spectral dependence of the LEF by tuning the wavelength of our optical probe from below resonance with the ground state of the QDs up to resonance with the first optically active excited-state transition. We find a decrease of the LEF with increasing photon energy at all investigated temperatures.
We present temperature-dependent measurements of the dephasing time in the ground-state transition of strongly-confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. At low temperature we measure a dephasing time of several hundred picoseconds. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian lineshape with a sharp zero-phonon line and a broad band from elastic exciton-acoustic phonon interactions. We also explore the dephasing time beyond the one exciton occupation, by electrically injecting carriers. Electrical injection into the barrier region results in a dominantly pure dephasing of the excitonic ground-state transition. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.