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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Temperature dependence homogeneous broadening and gain recovery dynamics in InGaAs quantum dots

Paola Borri, W. Langbein, Stephan Schneider, U. Woggon, Roman L. Sellin, Donald N. Ouyang, D. Bimberg

Published Jun 5, 2002• 0 citations
Publisher

Abstract

We present temperature-dependent measurements of the dephasing time in the ground-state transition of strongly-confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. At low temperature we measure a dephasing time of several hundred picoseconds. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian lineshape with a sharp zero-phonon line and a broad band from elastic exciton-acoustic phonon interactions. We also explore the dephasing time beyond the one exciton occupation, by electrically injecting carriers. Electrical injection into the barrier region results in a dominantly pure dephasing of the excitonic ground-state transition. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.

DOI
10.1117/12.514297

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Abstract We measure the dephasing time of the first optically‐active excited‐state excitonic transition in strongly confined InGaAs quantum dots using transient four‐wave mixing. The optically‐driven excited‐state polarization shows a bi‐exponential decay with a significant fraction of the probed excited states exhibiting a very long dephasing time, in the nanosecond range at 10 K. The full time‐dependent four‐wave mixing polarization is microscopically calculated by taking into account both virtual and real acoustic phonon‐assisted transitions. The bi‐exponential decay is qualitatively explained by a model of two‐bright excitonic excited states non‐degenerate in the absence of in‐plane cylindrical symmetry. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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We have performed time-integrated degenerate four-wave mixing experiments in InAs/GaAs self-assembled quantum dots. The quantum dots are excited in resonance with an intersublevel transition between the valence states of the dots. The dephasing time T2{T}_{2}T2​ is deduced from the time dependence of the photon echo amplitude as a function of the delay between the two incident pulses. At low temperature, a dephasing time T2{T}_{2}T2​ of 15 ps is measured for a resonant excitation at 7.4 \ensuremath{\mu}m wavelength. This dephasing corresponds to an homogeneous broadening of the intersublevel transition of 87 \ensuremath{\mu}eV. The polarization decay time is much longer than the one observed for resonant intersubband excitations in quantum wells. The dephasing time of the intersublevel polarization exhibits only a weak temperature dependence, indicating that the dephasing is not dominated by phonon-assisted scattering mechanisms.