Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

physica status solidi (a)

Temperature-Dependent Time-Resolved Four-Wave Mixing in InGaAs Quantum Dots

Paola Borri, W. Langbein, Stephan Schneider, U. Woggon, Roman L. Sellin, D. Ouyang, D. Bimberg

Published Apr 1, 2002• 1 citation
Publisher

Abstract

Time-resolved four-wave mixing in strongly confined and electrically pumped InGaAs quantum dots is measured at different temperatures. Without electrical injection, the dephasing time of the dot ground state transition is lifetime-limited and of several hundred picoseconds at low temperature. Under electrical injection, the sum of the contributions from empty and populated dots with a relative phase shift of π is evidenced near transparency.

DOI
10.1002/1521-396x(200204)190:2<517::aid-pssa517>3.0.co;2-k

Related papers

Temperature dependence homogeneous broadening and gain recovery dynamics in InGaAs quantum dots

Paola Borri, W. Langbein, Stephan Schneider +4 more

We present temperature-dependent measurements of the dephasing time in the ground-state transition of strongly-confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. At low temperature we measure a dephasing time of several hundred picoseconds. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian lineshape with a sharp zero-phonon line and a broad band from elastic exciton-acoustic phonon interactions. We also explore the dephasing time beyond the one exciton occupation, by electrically injecting carriers. Electrical injection into the barrier region results in a dominantly pure dephasing of the excitonic ground-state transition. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jun 5, 2002•0 citations

Ultralong Dephasing Time in InGaAs Quantum Dots

Paola Borri, W. Langbein, Stephan Schneider +4 more

We measure a dephasing time of several hundred picoseconds at low temperature in the ground-state transition of strongly confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian line shape with a lifetime-limited zero-phonon line and a broadband from elastic exciton-acoustic phonon interactions.

Physical Review Letters•Sep 1, 2001•996 citations

Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection

Paola Borri, W. Langbein, J. M. Hvam +3 more

Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias currents going from optical absorption to gain of the device. The four-wave mixing signal from 140 fs pulses shows a transition from a delayed photon-echo response in the absorption regime to a prompt free polarization decay in the gain regime. This corresponds to a pronounced reduction of the dephasing time from 250 fs at zero bias to less than 50 fs at the maximum applied current. The four-wave mixing response at transparency of the device shows a composite structure with both photon echo and free-polarization decay. This is a signature of the digital occupation number in quantum dots, resulting at transparency in a signal from dots occupied with either zero or two excitons corresponding to absorption or gain of the dot ground state.

Applied Physics Letters•Mar 13, 2000•46 citations

Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature

Paola Borri, W. Langbein, Stephan Schneider +4 more

We present an extensive experimental study of the exciton relaxation and dephasing in InGaAs quantum dots (QDs) in the temperature range from 10 K to 295 K. The QDs are embedded in the active region of an electrically pumped semiconductor optical amplifier. Ultrafast four-wave mixing and differential transmission spectroscopy on the dot ground-state transition are performed with a sensitive heterodyne detection technique. The importance of the population relaxation dynamics to the dephasing is determined as a function of injection current and temperature. Above 150 K dephasing processes much faster than the population relaxation are present, due to both carrier-phonon scattering and Coulomb interaction with the injected carriers. Only at low temperatures (<30 K) does population relaxation of multiexcitons in the gain regime fully determine the dephasing.

IEEE Journal of Selected Topics in Quantum Electronics•Sep 1, 2002•102 citations

Coherent Light-Matter Interaction in InGaAs Quantum Dots: Dephasing Time and Optical Rabi Oscillations

Paola Borri, W. Langbein, Stephan Schneider +4 more

We present measurements of the dephasing time and of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature, using an heterodyne pump–probe technique. Dephasing times of several hundred picoseconds are measured, enabling coherent light–matter interaction with picosecond optical pulses. Optical Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparison with calculations indicates that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.

physica status solidi (b)•Oct 1, 2002•6 citations

Radiatively limited dephasing in InAs quantum dots

W. Langbein, Paola Borri, U. Woggon +3 more

We measure the dephasing time of the exciton ground-state transition in ${\mathrm{In}}_{1\ensuremath{-}x}{\mathrm{Ga}}_{x}\mathrm{As}$ quantum dots using a sensitive four-wave mixing technique. We find experimental evidence that the dephasing time is given only by the radiative lifetime at low temperatures. We demonstrate the tunability of the radiatively limited dephasing time from $400\phantom{\rule{0.3em}{0ex}}\mathrm{ps}$ up to $2\phantom{\rule{0.3em}{0ex}}\mathrm{ns}$ in a series of annealed ${\mathrm{In}}_{1\ensuremath{-}x}{\mathrm{Ga}}_{x}\mathrm{As}$ quantum dots with increasing quantum-confinement energy from $69\phantom{\rule{0.3em}{0ex}}\mathrm{meV}\phantom{\rule{0.5em}{0ex}}\text{to}\phantom{\rule{0.5em}{0ex}}330\phantom{\rule{0.3em}{0ex}}\mathrm{meV}$.

Physical Review B•Jul 1, 2004•202 citations
Time-resolved four-wave mixing in strongly confined and electrically pumped InGaAs quantum dots is measured at different temperatures. Without electrical injection, the dephasing time of the dot ground state transition is lifetime-limited and of several hundred picoseconds at low temperature. Under electrical injection, the sum of the contributions from empty and populated dots with a relative phase shift of π is evidenced near transparency.
We present temperature-dependent measurements of the dephasing time in the ground-state transition of strongly-confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. At low temperature we measure a dephasing time of several hundred picoseconds. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian lineshape with a sharp zero-phonon line and a broad band from elastic exciton-acoustic phonon interactions. We also explore the dephasing time beyond the one exciton occupation, by electrically injecting carriers. Electrical injection into the barrier region results in a dominantly pure dephasing of the excitonic ground-state transition. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.
Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias currents going from optical absorption to gain of the device. The four-wave mixing signal from 140 fs pulses shows a transition from a delayed photon-echo response in the absorption regime to a prompt free polarization decay in the gain regime. This corresponds to a pronounced reduction of the dephasing time from 250 fs at zero bias to less than 50 fs at the maximum applied current. The four-wave mixing response at transparency of the device shows a composite structure with both photon echo and free-polarization decay. This is a signature of the digital occupation number in quantum dots, resulting at transparency in a signal from dots occupied with either zero or two excitons corresponding to absorption or gain of the dot ground state.
We present an extensive experimental study of the exciton relaxation and dephasing in InGaAs quantum dots (QDs) in the temperature range from 10 K to 295 K. The QDs are embedded in the active region of an electrically pumped semiconductor optical amplifier. Ultrafast four-wave mixing and differential transmission spectroscopy on the dot ground-state transition are performed with a sensitive heterodyne detection technique. The importance of the population relaxation dynamics to the dephasing is determined as a function of injection current and temperature. Above 150 K dephasing processes much faster than the population relaxation are present, due to both carrier-phonon scattering and Coulomb interaction with the injected carriers. Only at low temperatures (<30 K) does population relaxation of multiexcitons in the gain regime fully determine the dephasing.
We present measurements of the dephasing time and of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature, using an heterodyne pump–probe technique. Dephasing times of several hundred picoseconds are measured, enabling coherent light–matter interaction with picosecond optical pulses. Optical Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparison with calculations indicates that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.
We measure the dephasing time of the exciton ground-state transition in ${\mathrm{In}}_{1\ensuremath{-}x}{\mathrm{Ga}}_{x}\mathrm{As}$ quantum dots using a sensitive four-wave mixing technique. We find experimental evidence that the dephasing time is given only by the radiative lifetime at low temperatures. We demonstrate the tunability of the radiatively limited dephasing time from 400ps400\phantom{\rule{0.3em}{0ex}}\mathrm{ps}400ps up to 2ns2\phantom{\rule{0.3em}{0ex}}\mathrm{ns}2ns in a series of annealed ${\mathrm{In}}_{1\ensuremath{-}x}{\mathrm{Ga}}_{x}\mathrm{As}$ quantum dots with increasing quantum-confinement energy from 69meVto330meV69\phantom{\rule{0.3em}{0ex}}\mathrm{meV}\phantom{\rule{0.5em}{0ex}}\text{to}\phantom{\rule{0.5em}{0ex}}330\phantom{\rule{0.3em}{0ex}}\mathrm{meV}69meVto330meV.