Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Technical digest - International Electron Devices Meeting/Technical digest

Dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory application

Naoto Horiguchi, T. Futatsugi, Yoshihiro Nakata, Naoki Yokoyama

Published Dec 23, 2002• 0 citations
Publisher

Abstract

In this paper we report the dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory applications. We measured the time constant of electron transport between InAs self-assembled quantum dots and the n-GaAs substrate by making use of the frequency dependence of the CV signal due to the InAs dots. We obtained a time constant of 2.1 /spl mu/s from experiments. The experimental results are well explained by equivalent circuit calculations and the theoretically calculated CR time constant. The time constant is expected to reach the sub-picosecond range in samples with a 10 nm barrier thickness.

DOI
10.1109/iedm.1996.553617

Related papers

Observation of spectral hole burning in photocurrentspectrum of InAs self-assembled quantum dots embedded in pin diode

Yoshihiro Sugiyama, Yoshihiro Nakata, Shunichi Muto +4 more

The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

Electronics Letters•Sep 11, 1997•14 citations

Spectral hole burning of InAs self-assembled quantum dots written by two different lasers

Yoshihiro Sugiyama, Yoshihiro Nakata, Shunichi Muto +2 more

We report, for the first time, the two spectral holes in photocurrent of InAs self-assembled quantum dots embedded in a p-i-n diode irradiated by two different lasers. The estimated homogeneous broadening of less than 30 /spl mu/ eV for InAs QD implies the possibility of wavelength multiplicity of /spl ges/2800 for hole burning memory using QD. The spectral hole width irradiated by single mode YAG laser at 1064 nm showed temperature dependence of exp(T/30.9) in the range from 5 K to 80 K.

Technical digest - International Electron Devices Meeting/Technical digest•Nov 28, 2002•1 citation

Transient spectral hole burning spectroscopy of exciton spin flip processes in In(Ga)As quantum dots

Thomas G. Muller, G. Strasser, K. Unterrainer

Transient spectral hole burning measurements are performed on InAs/GaAs self-assembled quantum dots. In the case of cross-polarized pump and probe pulses, a spectral "antihole" emerges due to relaxation of the exciton spin.

IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)•Jan 1, 2005•0 citations

Dephasing in InAs/GaAs quantum dots

Paola Borri, W. Langbein, Jesper Mørk +4 more

The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of $290\ifmmode\pm\else\textpm\fi{}80 \mathrm{fs}$ from spectal-hole burning and of $260\ifmmode\pm\else\textpm\fi{}20 \mathrm{fs}$ from four-wave mixing.

Physical review. B, Condensed matter•Sep 15, 1999•133 citations

Spectral hole burning by storage of electrons or holes

Till Warming

Spectral hole burning in spectra of self‐organized InAs/GaAs quantum dots is demonstrated. Resonant charging with holes and for the first time with electrons is observed as saturation in the absorption spectra. This enables investigations on longer time scales than the lifetime of radiative recombination, in view of quantum dot memory devices or spin storage. Varying temperatures and excitation densities reveal the character of carrier escape mechanisms.

AIP conference proceedings•Jan 1, 2005•0 citations

Ultrafast spectral hole burning spectroscopy of exciton spin flip processes in InAs∕GaAs quantum dots

Thomas G. Muller, G. Strasser, K. Unterrainer

The exciton spin relaxation within the radiative doublet of the exciton ground state in InAs∕GaAs self-assembled quantum dots is studied via an ultrafast spectral hole burning technique. In the case of cross-polarized pump and probe pulses a spectral “antihole” emerges due to relaxation of the exciton spin. The measured relaxation time decreases rapidly from 1.15ns at T=5Kto90ps at 90K, suggesting exciton-acoustic phonon interaction as the underlying spin relaxation mechanism.

Applied Physics Letters•May 8, 2006•12 citations
In this paper we report the dynamic properties of InAs self-assembled quantum dots for spectral hole burning memory applications. We measured the time constant of electron transport between InAs self-assembled quantum dots and the n-GaAs substrate by making use of the frequency dependence of the CV signal due to the InAs dots. We obtained a time constant of 2.1 /spl mu/s from experiments. The experimental results are well explained by equivalent circuit calculations and the theoretically calculated CR time constant. The time constant is expected to reach the sub-picosecond range in samples with a 10 nm barrier thickness.