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Electronics Letters

Optical bistability and nonlinear resonance in a resonant-type semiconductor laser amplifier

Kenju Otsuka, Soichi Kobayashi

Published Mar 31, 1983• 84 citations
Publisher

Abstract

We report here on the first observation of hysteresis in the asymmetrical tuning curve of a semiconductor laser operating as a resonant-type amplifier. This bistable amplification resulting from a nonlinear resonance phenomenon is caused by the dependence of the refractive index on the injected carrier density.
DOI
10.1049/el:19830181

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Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.
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We propose and report the first experimental demonstration of a new type of active optical bistable device composed of an optical cavity and a lasing medium with a pumping source of either optical or nonopticai means. The basic principle underlying the operation of the optical bistable laser (OBL) is based on the stable-unstable cavity configuration transition of an active optical resonator. Generally speaking, a laser system showing both pump- and laser-induced tensing (focusing or defocusing) effects may display such a hysteresis loop in its input-output characteristics. Optical bistability (OB) based on self-focusing of light in a medium having a nonlinear refractive index has recently been shown experimentally.1
Experimental results of optical polarization bistability in InGaAsP lasers are reported and the causes of polarization switching and nonlinear response in this bistability are discussed. The input light signal consisted of the transverse magnetic (TM) wave, while the semiconductor lasers operated in a fundamental transverse electric (TE) mode when the light input was not injected. The light output versus light input characteristics were dependent on the input wavelength. Switching times of up to a few hundred picoseconds were achieved for both switch-up and switch-down. It was found that the TE and TM outputs originate from the TE oscillation and the TM amplification, respectively. Calculations using the rate equations showed that the TM input induces the nonlinearity of the carrier density. These results indicate that this bistability is a type of dispersive bistability.>