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IEEE Journal of Quantum Electronics

Optical polarization bistability in TM wave injected semiconductor lasers

Yoshihiro Mori, J. Shibati, Takao Kajiwara

Published Mar 1, 1989• 22 citations
Publisher

Abstract

Experimental results of optical polarization bistability in InGaAsP lasers are reported and the causes of polarization switching and nonlinear response in this bistability are discussed. The input light signal consisted of the transverse magnetic (TM) wave, while the semiconductor lasers operated in a fundamental transverse electric (TE) mode when the light input was not injected. The light output versus light input characteristics were dependent on the input wavelength. Switching times of up to a few hundred picoseconds were achieved for both switch-up and switch-down. It was found that the TE and TM outputs originate from the TE oscillation and the TM amplification, respectively. Calculations using the rate equations showed that the TM input induces the nonlinearity of the carrier density. These results indicate that this bistability is a type of dispersive bistability.>

DOI
10.1109/3.18539

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Dynamic properties of transverse-magnetic wave injected semiconductor lasers

Yoshihiro Mori

Dynamic responses of optical polarization bistability and self-sustained pulsation in transverse-magnetic (TM) wave injected semiconductor lasers are analyzed. Due to the TM wave injection, laser amplification of TM wave and laser oscillation in the transverse-electric (TE) mode simultaneously occurs in the laser. The calculated dynamic responses of optical polarization bistability are compared with measured responses. The upper limit of the switching time and the repetition frequency are clarified from calculations. The self-sustained pulsation triggered by a change of TM input power is found in the course of the calculation. The conditions needed for the pulsation are discussed.>

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Optical Bistability in 1.55 μm Semiconductor Laser Amplifiers

M.J. Adams, H.J. Westlake, M.J. O’Mahony

Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.

Topical Meeting on Optical Bistability (OB)•Jan 1, 1985•0 citations

Optical bistability in InGaAsP amplifiers and implications for passive devices

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We demonstrate optically bistable (light switching light) operation in a room-temperature InGaAsP Fabry-Perot amplifier. The amplifier is an InGaAsP/InP laser structure biased at ~95% of its lasing threshold. It is switched with <3 μW of optical power provided by the mechanically chopped output of a quasi-single-mode InGaAsP/InP laser. The experimental apparatus is depicted in Fig, 1. A change in the refractive Index in the amplifier of only 5 × 10−4 is sufficient to cause switching. Input and output pulses from the nonlinear amplifier are shown in Fig. 2 when the source frequency is initially detuned by 14 GHz from the closest Fabry-Perot mode of the amplifier. Smaller switching powers are required at lesser detunings. The physical mechanism of the intensity-dependent change of the refractive index is thought to be the change in carrier density resulting from stimulated recombination of free carriers.

Conference on Lasers and Electro-Optics•Jan 1, 1985•0 citations

Optical bistability in semiconductor lasers

J.E. Carroll, Ian H. White

Abstract Absorptive, dispersive and modal bistabilities are considered in semiconductor injection lasers. Previous work is briefly reviewed and the discussion is concerned with experimental work with transverse modal bistability in twin stripe injection lasers. A simple circuit analogy indicates how modal bistability can arise and how it is possible to have stronger light output on the side where the current drive is weakest. Experimental results are reviewed for an optical flip-flop with the use of twin-stripe lasers with three such lasers coupled together in an optical logic circuit. Various mode patterns that have been observed by using different geometries of twin-stripe lasers are discussed. Use is foreseen for active bistable devices in front-end optical signal processing.

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A novel method is proposed to produce an optical bistability by using a dynamically stable complex coupled DFB (CC-DFB) laser with TM mode injection. In this paper polarization optical bistabilities are analyzed in detail using coupled mode equations and rate equations for the CC-DFB lasers considering the longitudinal hole burning and carrier dependent complex coupling coefficients. Several parameters reflecting the physical features of a complex coupled DFB laser are discussed. It is shown that for a CC-DFB laser the polarization bistability induced by the TM mode injection is much stronger for the antiphase of complex coupling than that for the in-phase. In addition, the influences of initial coupling condition for gain grating structure on the optical bistability are also investigated considering both cases of the antiphase and in-phase.

Journal of Lightwave Technology•Apr 1, 1996•0 citations

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Kenju Otsuka, Soichi Kobayashi

We report here on the first observation of hysteresis in the asymmetrical tuning curve of a semiconductor laser operating as a resonant-type amplifier. This bistable amplification resulting from a nonlinear resonance phenomenon is caused by the dependence of the refractive index on the injected carrier density.

Electronics Letters•Mar 31, 1983•84 citations
Experimental results of optical polarization bistability in InGaAsP lasers are reported and the causes of polarization switching and nonlinear response in this bistability are discussed. The input light signal consisted of the transverse magnetic (TM) wave, while the semiconductor lasers operated in a fundamental transverse electric (TE) mode when the light input was not injected. The light output versus light input characteristics were dependent on the input wavelength. Switching times of up to a few hundred picoseconds were achieved for both switch-up and switch-down. It was found that the TE and TM outputs originate from the TE oscillation and the TM amplification, respectively. Calculations using the rate equations showed that the TM input induces the nonlinearity of the carrier density. These results indicate that this bistability is a type of dispersive bistability.>
Dynamic responses of optical polarization bistability and self-sustained pulsation in transverse-magnetic (TM) wave injected semiconductor lasers are analyzed. Due to the TM wave injection, laser amplification of TM wave and laser oscillation in the transverse-electric (TE) mode simultaneously occurs in the laser. The calculated dynamic responses of optical polarization bistability are compared with measured responses. The upper limit of the switching time and the repetition frequency are clarified from calculations. The self-sustained pulsation triggered by a change of TM input power is found in the course of the calculation. The conditions needed for the pulsation are discussed.>
Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.
We demonstrate optically bistable (light switching light) operation in a room-temperature InGaAsP Fabry-Perot amplifier. The amplifier is an InGaAsP/InP laser structure biased at ~95% of its lasing threshold. It is switched with <3 μW of optical power provided by the mechanically chopped output of a quasi-single-mode InGaAsP/InP laser. The experimental apparatus is depicted in Fig, 1. A change in the refractive Index in the amplifier of only 5 × 10−4 is sufficient to cause switching. Input and output pulses from the nonlinear amplifier are shown in Fig. 2 when the source frequency is initially detuned by 14 GHz from the closest Fabry-Perot mode of the amplifier. Smaller switching powers are required at lesser detunings. The physical mechanism of the intensity-dependent change of the refractive index is thought to be the change in carrier density resulting from stimulated recombination of free carriers.
Abstract Absorptive, dispersive and modal bistabilities are considered in semiconductor injection lasers. Previous work is briefly reviewed and the discussion is concerned with experimental work with transverse modal bistability in twin stripe injection lasers. A simple circuit analogy indicates how modal bistability can arise and how it is possible to have stronger light output on the side where the current drive is weakest. Experimental results are reviewed for an optical flip-flop with the use of twin-stripe lasers with three such lasers coupled together in an optical logic circuit. Various mode patterns that have been observed by using different geometries of twin-stripe lasers are discussed. Use is foreseen for active bistable devices in front-end optical signal processing.
A novel method is proposed to produce an optical bistability by using a dynamically stable complex coupled DFB (CC-DFB) laser with TM mode injection. In this paper polarization optical bistabilities are analyzed in detail using coupled mode equations and rate equations for the CC-DFB lasers considering the longitudinal hole burning and carrier dependent complex coupling coefficients. Several parameters reflecting the physical features of a complex coupled DFB laser are discussed. It is shown that for a CC-DFB laser the polarization bistability induced by the TM mode injection is much stronger for the antiphase of complex coupling than that for the in-phase. In addition, the influences of initial coupling condition for gain grating structure on the optical bistability are also investigated considering both cases of the antiphase and in-phase.