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Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences

Optical bistability in semiconductor lasers

J.E. Carroll, Ian H. White

Published Dec 18, 1984• 7 citations
Publisher

Abstract

Abstract Absorptive, dispersive and modal bistabilities are considered in semiconductor injection lasers. Previous work is briefly reviewed and the discussion is concerned with experimental work with transverse modal bistability in twin stripe injection lasers. A simple circuit analogy indicates how modal bistability can arise and how it is possible to have stronger light output on the side where the current drive is weakest. Experimental results are reviewed for an optical flip-flop with the use of twin-stripe lasers with three such lasers coupled together in an optical logic circuit. Various mode patterns that have been observed by using different geometries of twin-stripe lasers are discussed. Use is foreseen for active bistable devices in front-end optical signal processing.

DOI
10.1098/rsta.1984.0115

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Abstract Absorptive, dispersive and modal bistabilities are considered in semiconductor injection lasers. Previous work is briefly reviewed and the discussion is concerned with experimental work with transverse modal bistability in twin stripe injection lasers. A simple circuit analogy indicates how modal bistability can arise and how it is possible to have stronger light output on the side where the current drive is weakest. Experimental results are reviewed for an optical flip-flop with the use of twin-stripe lasers with three such lasers coupled together in an optical logic circuit. Various mode patterns that have been observed by using different geometries of twin-stripe lasers are discussed. Use is foreseen for active bistable devices in front-end optical signal processing.
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Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.
A unified description for semiconductor lasers based from below to above threshold with external light injection is presented using small-signal analysis. The threshold of a semiconductor laser can be reduced by external light injection. The gain change of the laser due to external light injection reaches its maximum just at threshold. Optical bistability in a semiconductor laser is found to be varied continuously from below to above threshold. An analytical expression for the bistable loop bandwidth is presented. There is an optical bias for a laser to maximize the loop bandwidth for a fixed injection power. The results are in good agreement with experiments.>
Optoelectronic hybrid bistability and multistability in an active interferometer using a laser diode are demonstrated experimentally. The active laser-diode interferometer is composed of a Twyman-Green interferometer with an electronic feedback circuit. By feeding back the interferometer output together with an external light input through a detector to control thelaser-diode injection current, the optical bistable and multistable states of the output power from the laser diode are observed. Bistable operation does not require cutoff or saturation in the amplifier. The theoretical background of the phenomena is discussed.