Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Digest on Nonlinear Optics: Materials, Phenomena and Devices

Optical Bistability And Switching By Non Inear Waveguiding In Semiconductor Lasers And Laser Amplifiers

John Gerard McInerney, Yuan Li, Theodore C. Salvi, D.M. Heffernan

Published Jan 1, 1990• 1 citation
Publisher

Abstract

Bistable optical devices (BODs) are interesting for optical switching, limiting, memory, signal conditioning and logic [1]. Semiconductor-based BODs are especially promising because their large nonlinearities should permit development of compact, rugged and efficient systems. Here we concentrate on active semiconductor BODs and switches, that is those which have internal gain, such as injection lasers and amplifiers.

DOI
10.1109/nlo.1990.695927

Related papers

Optical Bistability in Semiconductor Laser Amplifiers

M.J. Adams

It has recently become clear that OB in semiconductor laser amplifiers has many potential advantages for applications in optical logic and signal processing. Foremost among these advantages may be listed (i) ready availability (compared with other bistable devices [1]), (ii) wavelength compatibility with optical communications systems, (iii) inherent optical gain (for serial processing), and (iv) a combination of microwatt switching powers and nanosecond switching times leading to femtoule optical switching energies [2,3]. In support of item (ii) on this list, it is worth noting that amplifier OB has been reported at 0.8 μm [4], 1.3 μm [5], and 1.5 μm [6], all of which are wavelengths employed for optical communications systems.

Topical Meeting on Optical Bistability (OB)•Jan 1, 1988•0 citations

Bistable Optoelectronic Devices

John Gerard McInerney

We present a review of optical bistability in active and passive optoelectronic devices, with particular reference to switching speeds and powers. The large resonant nonlinearities available near the bandgaps of semiconductors may be utilized to develop bistable devices operating at low powers and high speeds. Passive devices are driven by external optical sources and include nonlinear etalons, nonlinear interfaces, self-focusing configurations and electro-optic modulators with electrical feedback. Active devices include injection lasers and superluminescent amplifiers. Potential advantages of active devices include speed, gain, sensitivity and the ability to drive other devices, but complexity and high power dissipation may limit their use in applications requiring high density.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jan 1, 1987•4 citations

Optical bistability measurements on a 1.S- μm semiconductor laser amplifier

H.J. Westlake, Matthew Adams, M.J. O’Mahony

Optical bistability in semiconductor laser amplifiers is particularly interesting because of the gain provided by the device. Small changes, in input power can result in large changes in amplifier gain, and this leads to possible applications in all-optical regenerators for transmission systems. Other possible applications include their use as optical switches and logic elements.1 Optical bistability in GaAs laser amplifiers operating at 850 nm has been reported previously.2 Here we report for the first time measured results at 1.5 μm with an InGaAsP device.

Conference on Lasers and Electro-Optics•Jan 1, 1985•0 citations

A New Time-Dependant Numerical Model of a Semiconductor Laser Amplifier with Absorbing Regions

Robert Noyes, Jayanta Sarma, I. Middlemast

Two segment devices for optical bistability have been studied extensively but in almost all these cases the switching process is essentially absorption dominated e.g. [1]. In contrast, a particularly interesting new mode of operation from the same device results if a coherent optical signal, placed fairly near to a Fabry-Perot (F-P) resonance of the device, is injected at the initially un-pumped end of the structure. As the intensity of the input signal is increased the unpumped region changes towards transparency thus causing the F-P resonance to ‘sharpen up’ and move with respect to the input signal wavelength. Under suitable conditions highly non-linear amplification of the signal (switching) occurs which can produce at the output a very much altered signal shape than at the input. In this mode of operation the device has potential application as signal pulse re-generators in coherent optical communication systems.

Optical Amplifiers and Their Applications•Jan 1, 1992•0 citations

Optical bistability in diode-laser amplifiers and injection-locked laser diodes

Rongqing Hui, Sergio Benedetto, Ivo Montrosset

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold have been investigated theoretically. The OB result is found to be varied continuously from below to above threshold with its maximum value located just above threshold; this result has been verified experimentally. A much faster switch-off of OB can be expected when the laser operates in the injection-locked condition.

Optics Letters•Feb 15, 1993•18 citations

Optical Bistability in 1.55 μm Semiconductor Laser Amplifiers

M.J. Adams, H.J. Westlake, M.J. O’Mahony

Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.

Topical Meeting on Optical Bistability (OB)•Jan 1, 1985•0 citations
Bistable optical devices (BODs) are interesting for optical switching, limiting, memory, signal conditioning and logic [1]. Semiconductor-based BODs are especially promising because their large nonlinearities should permit development of compact, rugged and efficient systems. Here we concentrate on active semiconductor BODs and switches, that is those which have internal gain, such as injection lasers and amplifiers.
It has recently become clear that OB in semiconductor laser amplifiers has many potential advantages for applications in optical logic and signal processing. Foremost among these advantages may be listed (i) ready availability (compared with other bistable devices [1]), (ii) wavelength compatibility with optical communications systems, (iii) inherent optical gain (for serial processing), and (iv) a combination of microwatt switching powers and nanosecond switching times leading to femtoule optical switching energies [2,3]. In support of item (ii) on this list, it is worth noting that amplifier OB has been reported at 0.8 μm [4], 1.3 μm [5], and 1.5 μm [6], all of which are wavelengths employed for optical communications systems.
We present a review of optical bistability in active and passive optoelectronic devices, with particular reference to switching speeds and powers. The large resonant nonlinearities available near the bandgaps of semiconductors may be utilized to develop bistable devices operating at low powers and high speeds. Passive devices are driven by external optical sources and include nonlinear etalons, nonlinear interfaces, self-focusing configurations and electro-optic modulators with electrical feedback. Active devices include injection lasers and superluminescent amplifiers. Potential advantages of active devices include speed, gain, sensitivity and the ability to drive other devices, but complexity and high power dissipation may limit their use in applications requiring high density.
Optical bistability in semiconductor laser amplifiers is particularly interesting because of the gain provided by the device. Small changes, in input power can result in large changes in amplifier gain, and this leads to possible applications in all-optical regenerators for transmission systems. Other possible applications include their use as optical switches and logic elements.1 Optical bistability in GaAs laser amplifiers operating at 850 nm has been reported previously.2 Here we report for the first time measured results at 1.5 μm with an InGaAsP device.
Two segment devices for optical bistability have been studied extensively but in almost all these cases the switching process is essentially absorption dominated e.g. [1]. In contrast, a particularly interesting new mode of operation from the same device results if a coherent optical signal, placed fairly near to a Fabry-Perot (F-P) resonance of the device, is injected at the initially un-pumped end of the structure. As the intensity of the input signal is increased the unpumped region changes towards transparency thus causing the F-P resonance to ‘sharpen up’ and move with respect to the input signal wavelength. Under suitable conditions highly non-linear amplification of the signal (switching) occurs which can produce at the output a very much altered signal shape than at the input. In this mode of operation the device has potential application as signal pulse re-generators in coherent optical communication systems.
Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.