Topical Meeting on Optical Bistability (OB)

Optical Bistability in Semiconductor Laser Amplifiers

M.J. Adams

Published Jan 1, 1988• 0 citations

Abstract

It has recently become clear that OB in semiconductor laser amplifiers has many potential advantages for applications in optical logic and signal processing. Foremost among these advantages may be listed (i) ready availability (compared with other bistable devices [1]), (ii) wavelength compatibility with optical communications systems, (iii) inherent optical gain (for serial processing), and (iv) a combination of microwatt switching powers and nanosecond switching times leading to femtoule optical switching energies [2,3]. In support of item (ii) on this list, it is worth noting that amplifier OB has been reported at 0.8 μm [4], 1.3 μm [5], and 1.5 μm [6], all of which are wavelengths employed for optical communications systems.

DOI: 10.1364/obi.1988.wb.1

Related papers

Optical bistability measurements on a 1.S- μm semiconductor laser amplifier

H.J. Westlake, Matthew Adams, M.J. O’Mahony

Optical bistability in semiconductor laser amplifiers is particularly interesting because of the gain provided by the device. Small changes, in input power can result in large changes in amplifier gain, and this leads to possible applications in all-optical regenerators for transmission systems. Other possible applications include their use as optical switches and logic elements.1 Optical bistability in GaAs laser amplifiers operating at 850 nm has been reported previously.2 Here we report for the first time measured results at 1.5 μm with an InGaAsP device.

Conference on Lasers and Electro-OpticsJan 1, 19850 citations

Optical bistability in active distributed—feedback structures: an experimental and theoretical study

Richard R. Wyatt, Mike J. Adams

Optical bistability in active semiconductor devices has attracted considerable interest recently due to the possibility of combining microwatt switching powers with nanosecond switching times. We present experimental and theoretical results of optical bistability in a distributed-feedback (DFB) laser amplifier operating in reflection at 1.5 μm; switch-on delay followed by a sharp transient overshoot is predicted and observed. Minimum switching energies are in the femtojoule region.

Conference on Lasers and Electro-OpticsJan 1, 19864 citations

Optical Bistability And Switching By Non Inear Waveguiding In Semiconductor Lasers And Laser Amplifiers

John Gerard McInerney, Yuan Li, Theodore C. Salvi +1 more

Bistable optical devices (BODs) are interesting for optical switching, limiting, memory, signal conditioning and logic [1]. Semiconductor-based BODs are especially promising because their large nonlinearities should permit development of compact, rugged and efficient systems. Here we concentrate on active semiconductor BODs and switches, that is those which have internal gain, such as injection lasers and amplifiers.

Digest on Nonlinear Optics: Materials, Phenomena and DevicesJan 1, 19901 citation

Optical Bistability in 1.55 μm Semiconductor Laser Amplifiers

M.J. Adams, H.J. Westlake, M.J. O’Mahony

Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.

Topical Meeting on Optical Bistability (OB)Jan 1, 19850 citations

Invited paper A tentative assessment of semiconductor laser optical bistability

Matthew Adams

A review is given of reported results for optical bistability in semiconductors, with especial reference to that occurring in laser structures. Estimates are made of likely improvements that may occur in power-speed trade-offs for these devices. It is concluded that laser amplifier bistability offers comparable or, in some cases, better total energy budgets than for other forms and has the useful attribute of optical gain. However, extreme wavelength sensitivity and difficulty in forming large two-dimensional arrays using today's technology mitigate against use of the amplifier for large-scale optical logic. These two factors may be avoided by the use of self-electro-optic effect devices (SEEDs), which are less wavelength-sensitive, and by multiple-quantum-well dispersive etalons in the case of requirements for large amounts of parallel processing.

International Journal of ElectronicsJan 1, 198620 citations

Static and dynamical properties of dispersive optical bistability in semiconductor lasers

Rongqing Hui

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>

Journal of Lightwave TechnologyJan 1, 199521 citations