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International Journal of Electronics

Invited paper A tentative assessment of semiconductor laser optical bistability

Matthew Adams

Published Jan 1, 1986• 20 citations
Publisher

Abstract

A review is given of reported results for optical bistability in semiconductors, with especial reference to that occurring in laser structures. Estimates are made of likely improvements that may occur in power-speed trade-offs for these devices. It is concluded that laser amplifier bistability offers comparable or, in some cases, better total energy budgets than for other forms and has the useful attribute of optical gain. However, extreme wavelength sensitivity and difficulty in forming large two-dimensional arrays using today's technology mitigate against use of the amplifier for large-scale optical logic. These two factors may be avoided by the use of self-electro-optic effect devices (SEEDs), which are less wavelength-sensitive, and by multiple-quantum-well dispersive etalons in the case of requirements for large amounts of parallel processing.

DOI
10.1080/00207218608920767

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A review is given of reported results for optical bistability in semiconductors, with especial reference to that occurring in laser structures. Estimates are made of likely improvements that may occur in power-speed trade-offs for these devices. It is concluded that laser amplifier bistability offers comparable or, in some cases, better total energy budgets than for other forms and has the useful attribute of optical gain. However, extreme wavelength sensitivity and difficulty in forming large two-dimensional arrays using today's technology mitigate against use of the amplifier for large-scale optical logic. These two factors may be avoided by the use of self-electro-optic effect devices (SEEDs), which are less wavelength-sensitive, and by multiple-quantum-well dispersive etalons in the case of requirements for large amounts of parallel processing.
It has recently become clear that OB in semiconductor laser amplifiers has many potential advantages for applications in optical logic and signal processing. Foremost among these advantages may be listed (i) ready availability (compared with other bistable devices [1]), (ii) wavelength compatibility with optical communications systems, (iii) inherent optical gain (for serial processing), and (iv) a combination of microwatt switching powers and nanosecond switching times leading to femtoule optical switching energies [2,3]. In support of item (ii) on this list, it is worth noting that amplifier OB has been reported at 0.8 μm [4], 1.3 μm [5], and 1.5 μm [6], all of which are wavelengths employed for optical communications systems.
We present a review of optical bistability in active and passive optoelectronic devices, with particular reference to switching speeds and powers. The large resonant nonlinearities available near the bandgaps of semiconductors may be utilized to develop bistable devices operating at low powers and high speeds. Passive devices are driven by external optical sources and include nonlinear etalons, nonlinear interfaces, self-focusing configurations and electro-optic modulators with electrical feedback. Active devices include injection lasers and superluminescent amplifiers. Potential advantages of active devices include speed, gain, sensitivity and the ability to drive other devices, but complexity and high power dissipation may limit their use in applications requiring high density.
Abstract This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.
A comparison is presented between optical bistability in laser amplifiers and in passive Fabry-Perot cavities. The basis for comparison is afforded by a new analysis of optical amplifiers which encompasses the cases of passive refractive and absorptive bistability as special limiting cases. The results indicate that amplifiers have advantages of lower input intensity requirements (by a factor of 103) and reduced sensitivity to wavelength by comparison with passive cavities; experimental results indicate an input power of -30 dBm is required for active bistability. Facet coating requirements for active and passive optimum configurations are also discussed.
Optical bistability in semiconductor laser amplifiers is particularly interesting because of the gain provided by the device. Small changes, in input power can result in large changes in amplifier gain, and this leads to possible applications in all-optical regenerators for transmission systems. Other possible applications include their use as optical switches and logic elements.1 Optical bistability in GaAs laser amplifiers operating at 850 nm has been reported previously.2 Here we report for the first time measured results at 1.5 μm with an InGaAsP device.