Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

IEEE Journal of Quantum Electronics

A unified description of semiconductor lasers with external light injection and its application to optical bistability

Linlin Li

Published Jan 1, 1994• 27 citations
Publisher

Abstract

A unified description for semiconductor lasers based from below to above threshold with external light injection is presented using small-signal analysis. The threshold of a semiconductor laser can be reduced by external light injection. The gain change of the laser due to external light injection reaches its maximum just at threshold. Optical bistability in a semiconductor laser is found to be varied continuously from below to above threshold. An analytical expression for the bistable loop bandwidth is presented. There is an optical bias for a laser to maximize the loop bandwidth for a fixed injection power. The results are in good agreement with experiments.>

DOI
10.1109/3.301635

Related papers

Optical frequency bistability and power bistability in semiconductor lasers

Linlin Li

Optical frequency bistability and power bistability in semiconductor lasers biased from below to above threshold are presented using the unified description of semiconductor lasers with external light injection. A new method is given to calculate the bistable frequency and power loop widths. When the bias current of a laser is fixed, there is a lowest power for the external light to realize optical frequency bistability. And this lowest power reaches its minimum just at threshold. The optical injection level (defined as the ratio of the injected power to the power emitted by the free-running laser) must be larger than a certain value to obtain the bistability. This level may be larger than unity for a laser biased below threshold. On the other hand, for a given bias current, there is a lowest frequency detuning between the electric field of the laser and the injected field to achieve the power bistability. And this detuning must be negative for any bias current (below or above threshold) of the laser. The results are in good agreement with experiments.>

IEEE Journal of Quantum Electronics•Jan 1, 1995•6 citations

Optical bistability in diode-laser amplifiers and injection-locked laser diodes

Rongqing Hui, Sergio Benedetto, Ivo Montrosset

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold have been investigated theoretically. The OB result is found to be varied continuously from below to above threshold with its maximum value located just above threshold; this result has been verified experimentally. A much faster switch-off of OB can be expected when the laser operates in the injection-locked condition.

Optics Letters•Feb 15, 1993•18 citations

Static and dynamical properties of dispersive optical bistability in semiconductor lasers

Rongqing Hui

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>

Journal of Lightwave Technology•Jan 1, 1995•21 citations

Dynamics of optically switched bistable laser diodes in the injection-locked state

Rongqing Hui, A. Paradisi, Sergio Benedetto +1 more

The dynamical properties of dispersive optical bistability in a semiconductor laser biased from below to above threshold are investigated both experimentally and theoretically. The optical bistability switch-off time is found to decrease continuously from below to above threshold. A fast switch-off in less than 100 ps has been observed when the laser operates in the injection-locked condition.

Optics Letters•Oct 15, 1993•17 citations

Optical bistability in semiconductor lasers

J.E. Carroll, Ian H. White

Abstract Absorptive, dispersive and modal bistabilities are considered in semiconductor injection lasers. Previous work is briefly reviewed and the discussion is concerned with experimental work with transverse modal bistability in twin stripe injection lasers. A simple circuit analogy indicates how modal bistability can arise and how it is possible to have stronger light output on the side where the current drive is weakest. Experimental results are reviewed for an optical flip-flop with the use of twin-stripe lasers with three such lasers coupled together in an optical logic circuit. Various mode patterns that have been observed by using different geometries of twin-stripe lasers are discussed. Use is foreseen for active bistable devices in front-end optical signal processing.

Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences•Dec 18, 1984•7 citations

Optical Bistability in 1.55 μm Semiconductor Laser Amplifiers

M.J. Adams, H.J. Westlake, M.J. O’Mahony

Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.

Topical Meeting on Optical Bistability (OB)•Jan 1, 1985•0 citations
A unified description for semiconductor lasers based from below to above threshold with external light injection is presented using small-signal analysis. The threshold of a semiconductor laser can be reduced by external light injection. The gain change of the laser due to external light injection reaches its maximum just at threshold. Optical bistability in a semiconductor laser is found to be varied continuously from below to above threshold. An analytical expression for the bistable loop bandwidth is presented. There is an optical bias for a laser to maximize the loop bandwidth for a fixed injection power. The results are in good agreement with experiments.>
Optical frequency bistability and power bistability in semiconductor lasers biased from below to above threshold are presented using the unified description of semiconductor lasers with external light injection. A new method is given to calculate the bistable frequency and power loop widths. When the bias current of a laser is fixed, there is a lowest power for the external light to realize optical frequency bistability. And this lowest power reaches its minimum just at threshold. The optical injection level (defined as the ratio of the injected power to the power emitted by the free-running laser) must be larger than a certain value to obtain the bistability. This level may be larger than unity for a laser biased below threshold. On the other hand, for a given bias current, there is a lowest frequency detuning between the electric field of the laser and the injected field to achieve the power bistability. And this detuning must be negative for any bias current (below or above threshold) of the laser. The results are in good agreement with experiments.>
Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>
Abstract Absorptive, dispersive and modal bistabilities are considered in semiconductor injection lasers. Previous work is briefly reviewed and the discussion is concerned with experimental work with transverse modal bistability in twin stripe injection lasers. A simple circuit analogy indicates how modal bistability can arise and how it is possible to have stronger light output on the side where the current drive is weakest. Experimental results are reviewed for an optical flip-flop with the use of twin-stripe lasers with three such lasers coupled together in an optical logic circuit. Various mode patterns that have been observed by using different geometries of twin-stripe lasers are discussed. Use is foreseen for active bistable devices in front-end optical signal processing.
Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.