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Conference on Lasers and Electro-Optics

Optical bistability in InGaAsP amplifiers and implications for passive devices

Wayne F. Sharfin, M. Dagenais

Published Jan 1, 1985• 0 citations
Publisher

Abstract

We demonstrate optically bistable (light switching light) operation in a room-temperature InGaAsP Fabry-Perot amplifier. The amplifier is an InGaAsP/InP laser structure biased at ~95% of its lasing threshold. It is switched with <3 μW of optical power provided by the mechanically chopped output of a quasi-single-mode InGaAsP/InP laser. The experimental apparatus is depicted in Fig, 1. A change in the refractive Index in the amplifier of only 5 × 10−4 is sufficient to cause switching. Input and output pulses from the nonlinear amplifier are shown in Fig. 2 when the source frequency is initially detuned by 14 GHz from the closest Fabry-Perot mode of the amplifier. Smaller switching powers are required at lesser detunings. The physical mechanism of the intensity-dependent change of the refractive index is thought to be the change in carrier density resulting from stimulated recombination of free carriers.

DOI
10.1364/cleo.1985.ff5

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Room-temperature optical bistability in InGaAsP/InP amplifiers and implications for passive devices

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Digest on Nonlinear Optics: Materials, Phenomena and Devices•Jan 1, 1990•0 citations
We demonstrate optically bistable (light switching light) operation in a room-temperature InGaAsP Fabry-Perot amplifier. The amplifier is an InGaAsP/InP laser structure biased at ~95% of its lasing threshold. It is switched with <3 μW of optical power provided by the mechanically chopped output of a quasi-single-mode InGaAsP/InP laser. The experimental apparatus is depicted in Fig, 1. A change in the refractive Index in the amplifier of only 5 × 10−4 is sufficient to cause switching. Input and output pulses from the nonlinear amplifier are shown in Fig. 2 when the source frequency is initially detuned by 14 GHz from the closest Fabry-Perot mode of the amplifier. Smaller switching powers are required at lesser detunings. The physical mechanism of the intensity-dependent change of the refractive index is thought to be the change in carrier density resulting from stimulated recombination of free carriers.
Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.
Optical bistability in a single quantum well waveguide resonator in the InP/InGaAsP material system is demonstrated. High contrast ratio (≳3:1) and switching at low power (≊1.5 mW) was obtained by using a single quantum well at a wavelength near the maximum nonlinear refractive index change and by depositing a reflective coating on the rear end of the waveguide. Clear optical bistability is observed in a wide wavelength range of 1480–1525 nm. Due to the low input power, cw operation of the device was possible at room temperature.
We report the demonstration of cascadability in bistable diode laser amplifiers operated below threshold. A schematic of the experimental set-up is shown in Figure 1. There it is shown that the optical input to the first bistable diode laser amplifier is modulated by a mechanical chopper at frequency Ω1. The output from the first bistable diode laser amplifier is then modulated at Ω2= 2Ω1using a second mechanical chopper. The light is thereafter used as the input to the second bistable device. When the input intensity to the second device is higher than a certain threshold, the output switches. These results are shown in Figure 2. For these experiments, each of the bistable diode laser amplifiers were carefully studied. Detailed bistability measurements at different bias currents and different cavity detuning's were performed. It was found that both the bistability loop and the switching power gets larger as the detuning increases. The size of the hysteresis loop also increased as the laser was operated closer to threshold. In a two beam experiment, it was found that the switching power in the data beam can be as small as 25 nW. Gains larger than 1000 have been demonstrated, indicating the large fan-out capability of these devices. The turn-on and turn-off times in these bistable diode laser amplifiers was measured to be faster than 1 ns and detector limited. These bistable diode laser amplifiers are the most efficient optical devices that have yet been demonstrated and will find applications in photonic switching networks.