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Japanese Journal of Applied Physics

Optical Bistability in a Semiconductor Laser Amplifier

Tetsuya Nakai, Nagaatsu Ogasawara, Ryoichi Ito

Published May 1, 1983• 80 citations
Publisher

Abstract

Optical bistability has been observed in a semiconductor laser operating as an amplifier. The bistability arises from the refractive index change due to a decrease in the active-region carrier density accompanied by optical amplification. Output pulsations due to the competition between the free-carrier and thermal effects have also been observed.

DOI
10.1143/jjap.22.l310

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Optical bistability has been observed in a semiconductor laser operating as an amplifier. The bistability arises from the refractive index change due to a decrease in the active-region carrier density accompanied by optical amplification. Output pulsations due to the competition between the free-carrier and thermal effects have also been observed.
We demonstrate optically bistable (light switching light) operation in a room-temperature InGaAsP Fabry-Perot amplifier. The amplifier is an InGaAsP/InP laser structure biased at ~95% of its lasing threshold. It is switched with <3 μW of optical power provided by the mechanically chopped output of a quasi-single-mode InGaAsP/InP laser. The experimental apparatus is depicted in Fig, 1. A change in the refractive Index in the amplifier of only 5 × 10−4 is sufficient to cause switching. Input and output pulses from the nonlinear amplifier are shown in Fig. 2 when the source frequency is initially detuned by 14 GHz from the closest Fabry-Perot mode of the amplifier. Smaller switching powers are required at lesser detunings. The physical mechanism of the intensity-dependent change of the refractive index is thought to be the change in carrier density resulting from stimulated recombination of free carriers.
Dispersive bistability arising from the carrier-dependence of the refractive index has been observed in semiconductor lasers operated just below threshold with a small injected optical signal. The minimum optical input required for switch-up is as low as 1 μW for InGaAsP amplifiers at 1.55 μm(1) and 1.3 μm(2) (cf 30 μW for GaAs devices(3)). As yet, reliable measurements of the dynamic response are not (4) available, although we predict recovery times to be on the order of carrier lifetimes, ie a few nanoseconds at room temperature. This contribution will review our experimental and theoretical work on 1.55 μm amplifier bistability and set it in the context of other semiconductor bistable optical devices.
Dispersive optical bistability in a Fabry-Perot, a distributed feedback (DFB), or a distributed Bragg reflector (DBR), semiconductor laser amplifier has recently attracted much attention, because of its potential in the operation of highly functional optical devices. While the steady-state operation of bistable diode laser amplifiers are well understood, studies of the dynamic properties have been limited to switching time, critical slowing down and output spiking measurements[1-3]. Little attention has been paid to the dynamic frequency chirp which is associated with the turn-on spike at the onset of light injection. Such frequency chirp exists because in dispersive bistability the Fabry-Perot resonance (or the DBR/DFB transmission peak) sweeps through the injected wavelength as a result of alight induced refractive index change. In this paper, we report on a theoretical analysis and the first experimental observation of this dynamic chirp in a Fabry-Perot type nonlinear semiconductor laser amplifier. It is found that the magnitude of the chirp depends on the input power, which in turn is related to critical slowing down.