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Journal of the Optical Society of America B

Analysis of electromagnetically induced transparency-based quantum dot infrared photodetectors

Chandra Mohan Singh Negi, Jitendra Kumar

Published Aug 14, 2014• 10 citations
Publisher

Abstract

A quantum dot infrared (IR) photodetector based on intraband optical transitions among the various states within the valence band by considering the principle of electromagnetically induced transparency (EIT) is proposed and theoretically investigated. Absorption spectra of the probe beam and its dependence on the control beam and IR signal under the conditions of EIT have been studied. The incident IR signal itself does not generate any photocurrent. However, profound modification of the absorption characteristics of the probe beam by incident IR signal intensity leads to photocurrent generation in the proposed photodetector. Thermal characterization of the photodetector has been carried out through the evaluation of the temperature dependence of the quantum efficiency of the device.

DOI
10.1364/josab.31.002121

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A quantum dot infrared (IR) photodetector based on intraband optical transitions among the various states within the valence band by considering the principle of electromagnetically induced transparency (EIT) is proposed and theoretically investigated. Absorption spectra of the probe beam and its dependence on the control beam and IR signal under the conditions of EIT have been studied. The incident IR signal itself does not generate any photocurrent. However, profound modification of the absorption characteristics of the probe beam by incident IR signal intensity leads to photocurrent generation in the proposed photodetector. Thermal characterization of the photodetector has been carried out through the evaluation of the temperature dependence of the quantum efficiency of the device.
A new Terahertz photodetector based on Electromagnetically Induced Transparency (EIT) is proposed. In the terahertz range (low energy signal) the limiting point is dark current. Dark current determines the signal-noise ratio of detectors. Our main purpose in terahertz detection is reduction of the dark current which is done by converting the incoming Terahertz IR signal to short-wavelength or visible probe optical field through EIT phenomena. For realization of this idea, we used 4-level atoms which can be implemented by quantum wells or dots. In the proposed structure, the terahertz-IR signal does not interact directly with ground state electrons, but affects the absorption characteristics of the short-wavelength or visible probe optical field that directly interact with ground state electrons. Therefore, in the proposed structure, the important thermionic dark current in terahertz detection, can be strongly reduced.
In this paper, we design a room temperature long wavelength quantum dot infrared photo detector (QDIP) by considering the principle of electromagnetically induced transparency (EIT) in a nanocrystal composed of a spherical GaAs quantum dot (QD) embedded in InAs . It is shown that the presence of long wavelength infrared (IR) signal in the medium affects on the absorption of visible optical probe (λp) in proposed photo detector. The far IR wavelength (λ FIR ) can be tuned to be 20 μm by means of external voltage and the size of QD. It is found that increasing the magnitude of far IR signal in the medium results in increase of optical probe signal absorption.
Abstract—A novel kind of room temperature terahertz photodetector based on Electromagnetically Induced Transparency (EIT) is presented. The main idea for room temperature and THz range operation is reduction of dark current which is done by converting of the incoming terahertz signal (long-wavelength Infrared signal) to shortwavelength field through EIT phenomena. For realization of this idea, we examine EIT phenomena in multi levels atomic system and quantum wells cascade structures. In the proposed structure the quantum interference between long wavelength and short-wavelength radiation modifies the absorption characteristic of short-wavelength probe field. By this means, the terahertz signal does not interact directly with ground state electrons, but affects on the absorption characteristics of
Since discrete multilevel transitions of quantum-dot molecules driven by external electromagnetic fields can exhibit quantum coherence effects, such an optical characteristic can be utilized to control propagation of electromagnetic wave through a quantum-dot molecule dielectric film. Since inner-dot tunneling in quantum-dot molecules can be controlled by a gate voltage, destructive quantum coherence among multilevel transitions in quantum-dot molecule would give rise to EIT (electromagnetically induced transparency). In this report, we shall investigate controllable on- and off-resonance tunneling effects of an incident electromagnetic wave through such a quan-tum-dot-molecule dielectric film, of which the optical response is tuned by the switchable gate voltage. We have found from the theoretical mechanism that a high gate voltage can cause the EIT phenomenon of quan-tum-dot-molecule systems, and under the condition of on-resonance light tunneling through the thin film, the probe field will propagation without loss if the probe frequency detuning is zero. By taking advantage of these effects sensitive to the tunable gate voltage, such quantum coherence would be inte-grated in certain photonic structures, and some devices such as photonic switching and transistors can be designed. Transient evolution of optical characteristics in the quantum-dot-molecule dielectric film (once the tunable gate voltage is turned on or off) is also considered in this report.
Using multiband $\stackrel{P\vec}{k}\ensuremath{\cdot}\stackrel{P\vec}{p}$ theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the VVV-type scheme for electromagnetically induced transparency (EIT) to be most favorable and identify an optimal height and size for efficient EIT operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy-level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing four different $\stackrel{P\vec}{k}\ensuremath{\cdot}\stackrel{P\vec}{p}$ band-structure models. In addition to the separation of the heavy and light holes due to the biaxial-strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band-mixing effects. We furthermore find a nontrivial quantum dot size dependence of the dipole moments directly related to the biaxial-strain component. Due to the separation of the heavy and light holes the optical transition strengths between the lower conduction and upper most valence-band states computed using one-band model and eight-band model show general qualitative agreement, with exceptions relevant for EIT operation.