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Physical Review B

Optical properties and optimization of electromagnetically induced transparency in strained InAs/GaAs quantum dot structures

Daniele Barettin, J. Houmark, Benny Lassen, Morten Willatzen, T. R. Nielsen, Jesper Mørk, Antti‐Pekka Jauho

Published Dec 2, 2009• 46 citations
Publisher

Abstract

Using multiband $\stackrel{P\vec}{k}\ensuremath{\cdot}\stackrel{P\vec}{p}$ theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the $V$-type scheme for electromagnetically induced transparency (EIT) to be most favorable and identify an optimal height and size for efficient EIT operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy-level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing four different $\stackrel{P\vec}{k}\ensuremath{\cdot}\stackrel{P\vec}{p}$ band-structure models. In addition to the separation of the heavy and light holes due to the biaxial-strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band-mixing effects. We furthermore find a nontrivial quantum dot size dependence of the dipole moments directly related to the biaxial-strain component. Due to the separation of the heavy and light holes the optical transition strengths between the lower conduction and upper most valence-band states computed using one-band model and eight-band model show general qualitative agreement, with exceptions relevant for EIT operation.

DOI
10.1103/physrevb.80.235304

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Using multiband \stackrel{P\vec}{k}\ensuremath{\cdot}\stackrel{P\vec}{p} theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the VVV-type scheme for electromagnetically induced transparency (EIT) to be most favorable and identify an optimal height and size for efficient EIT operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy-level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing four different \stackrel{P\vec}{k}\ensuremath{\cdot}\stackrel{P\vec}{p} band-structure models. In addition to the separation of the heavy and light holes due to the biaxial-strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band-mixing effects. We furthermore find a nontrivial quantum dot size dependence of the dipole moments directly related to the biaxial-strain component. Due to the separation of the heavy and light holes the optical transition strengths between the lower conduction and upper most valence-band states computed using one-band model and eight-band model show general qualitative agreement, with exceptions relevant for EIT operation.
Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and identify an optimal height and size for efficient EIT operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing four different k*p band structure models. In addition to the separation of the heavy and light holes due to the biaxial strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band mixing effects. We furthermore find a non-trivial quantum dot size dependence of the dipole moments directly related to the biaxial strain component. Due to the separation of the heavy and light holes the optical transition strengths between the lower conduction and upper most valence-band states computed using one-band model and eight-band model show general qualitative agreement, with exceptions relevant for EIT operation.
The electronic states of InAs/GaAs quantum dot has investigated for triple conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage. Tunneling-induced transparency (TIT) in triple InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The interdot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in triple InAs/GaAs quantum dots controlled by electric fields.
The electronic states of InAs/GaAs quantum dot has investigated for vertically-aligned double conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage, wetting layer thickness and inter-dot spacer. Tunneling-induced transparency (TIT) in vertically coupled InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The inter-dot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in vertically coupled InAs/GaAs quantum dots controlled by electric fields.
We investigate the impact of many-body interactions on group-velocity slowdown achieved via electromagnetically induced transparency in quantum dots using three different coupling-probe schemes (ladder, VVV, and $\ensuremath{\Lambda}$, respectively). We find that for all schemes many-body interactions have an important impact on the slow light properties. In the case of the $\ensuremath{\Lambda}$ and VVV schemes, the minimum required coupling power to achieve slow light is significantly reduced by many-body interactions. VVV type schemes are found to be generally preferable due to a favorable redistribution of carriers in energy space.
We model the slow-light phenomenon using electromagnetically induced transparency from spin coherence in [110] quantum wells. The long electron-spin lifetime in [110] quantum wells and the strain-induced shift of the light-hole-like excitonic transition energy below those of the heavy-hole-like continuum states can enhance the performance of slow light. The optical anisotropy due to band mixing and strain in [110] quantum wells is properly taken into consideration. By using light-hole-like excitons, the delay of a probe light with TM polarization in an optical waveguide controllable by an intense pump is made possible with the aid of long spin coherence.
This article investigates and improves optical properties of slow light devices. The device structure consists GaAs/AlGaAs [110] strained quantum wells (QWs) based on V-type electromagnetically induced transparency (EIT). In this paper, we use an analytical model in fractional dimension in order to simulate and analysis slow light device. Effects of well width variation have been investigated on exciton oscillator strength (EOS) and fractional dimension parameter. Influences of these parameters alterations have been illustrated in optical properties of slow light system such as slow down factor (SDF) and central energy of the device. Based on obtained results, we can adjust optical variables of slow light system with controlling the well thickness. Using proposed method, we have also estimated the maximum value of SDF about 9×103.