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arXiv:0904.4593 · Physical Review B

Comparison of electromagnetically induced transparency schemes in semiconductor quantum dot structures: Impact of many-body interactions

J. Houmark, T. R. Nielsen, Jesper Mørk, Antti‐Pekka Jauho

Published Mar 16, 2009• 26 citations
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Abstract

We investigate the impact of many-body interactions on group-velocity slowdown achieved via electromagnetically induced transparency in quantum dots using three different coupling-probe schemes (ladder, $V$, and $\ensuremath{\Lambda}$, respectively). We find that for all schemes many-body interactions have an important impact on the slow light properties. In the case of the $\ensuremath{\Lambda}$ and $V$ schemes, the minimum required coupling power to achieve slow light is significantly reduced by many-body interactions. $V$ type schemes are found to be generally preferable due to a favorable redistribution of carriers in energy space.

DOI
10.1103/physrevb.79.115420

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Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.
The slowdown of optical pulses due to quantum-coherence effects is investigated theoretically for an ``active material'' consisting of InGaAs-based double quantum dot molecules. These are designed to exhibit a long-lived coherence between two electronic levels, which is an essential part of a quantum-coherence scheme that makes use of electromagnetically induced transparency effects to achieve group-velocity slowdown. We apply a many-particle approach based on realistic semiconductor parameters that allows us to calculate the quantum dot material dynamics including microscopic carrier scattering and polarization dephasing dynamics. The group-velocity reduction is characterized in the frequency domain by a quasiequilibrium slowdown factor and in the time domain by the probe-pulse slowdown obtained from a calculation of the spatiotemporal material dynamics coupled to the propagating optical field. The group-velocity slowdown in the quantum dot molecule is shown to be substantially higher than what is achievable from similar transitions in typical InGaAs-based single quantum dots. The dependencies of slowdown and shape of the propagating probe pulses on lattice temperature and drive intensities are investigated.
The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100Gbits∕s optical network, numerical calculation infers group velocity as low as 300m∕s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.