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International Journal of Modern Physics B

FAR INFRARED PHOTO DETECTOR BASED ON ELECTROMAGNETICALLY INDUCED TRANSPARENCY

Seyyed Hossein Asadpour, Amir Soltani, A. Eslami-Majd, HAMID RAHIMPOUR SOLEIMANI

Published Jan 4, 2013• 7 citations
Publisher

Abstract

In this paper, we design a room temperature long wavelength quantum dot infrared photo detector (QDIP) by considering the principle of electromagnetically induced transparency (EIT) in a nanocrystal composed of a spherical GaAs quantum dot (QD) embedded in InAs . It is shown that the presence of long wavelength infrared (IR) signal in the medium affects on the absorption of visible optical probe (λp) in proposed photo detector. The far IR wavelength (λ FIR ) can be tuned to be 20 μm by means of external voltage and the size of QD. It is found that increasing the magnitude of far IR signal in the medium results in increase of optical probe signal absorption.

DOI
10.1142/s0217979213500045

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In this paper, we design a room temperature long wavelength quantum dot infrared photo detector (QDIP) by considering the principle of electromagnetically induced transparency (EIT) in a nanocrystal composed of a spherical GaAs quantum dot (QD) embedded in InAs . It is shown that the presence of long wavelength infrared (IR) signal in the medium affects on the absorption of visible optical probe (λp) in proposed photo detector. The far IR wavelength (λ FIR ) can be tuned to be 20 μm by means of external voltage and the size of QD. It is found that increasing the magnitude of far IR signal in the medium results in increase of optical probe signal absorption.
A quantum dot infrared (IR) photodetector based on intraband optical transitions among the various states within the valence band by considering the principle of electromagnetically induced transparency (EIT) is proposed and theoretically investigated. Absorption spectra of the probe beam and its dependence on the control beam and IR signal under the conditions of EIT have been studied. The incident IR signal itself does not generate any photocurrent. However, profound modification of the absorption characteristics of the probe beam by incident IR signal intensity leads to photocurrent generation in the proposed photodetector. Thermal characterization of the photodetector has been carried out through the evaluation of the temperature dependence of the quantum efficiency of the device.
A new Terahertz photodetector based on Electromagnetically Induced Transparency (EIT) is proposed. In the terahertz range (low energy signal) the limiting point is dark current. Dark current determines the signal-noise ratio of detectors. Our main purpose in terahertz detection is reduction of the dark current which is done by converting the incoming Terahertz IR signal to short-wavelength or visible probe optical field through EIT phenomena. For realization of this idea, we used 4-level atoms which can be implemented by quantum wells or dots. In the proposed structure, the terahertz-IR signal does not interact directly with ground state electrons, but affects the absorption characteristics of the short-wavelength or visible probe optical field that directly interact with ground state electrons. Therefore, in the proposed structure, the important thermionic dark current in terahertz detection, can be strongly reduced.
Abstract—A novel kind of room temperature terahertz photodetector based on Electromagnetically Induced Transparency (EIT) is presented. The main idea for room temperature and THz range operation is reduction of dark current which is done by converting of the incoming terahertz signal (long-wavelength Infrared signal) to shortwavelength field through EIT phenomena. For realization of this idea, we examine EIT phenomena in multi levels atomic system and quantum wells cascade structures. In the proposed structure the quantum interference between long wavelength and short-wavelength radiation modifies the absorption characteristic of short-wavelength probe field. By this means, the terahertz signal does not interact directly with ground state electrons, but affects on the absorption characteristics of
A coherent absorption dip in pump-probe experiment performed on a ten layer optically thin InGaAs∕GaAs quantum dot (QD) structure has been observed. Measurements performed for different wavelengths, polarizations, pulse widths, and temperatures allow assigning the dip to electromagnetically induced transparency (EIT). The EIT scheme is based on coupling of excitons with different spins in asymmetric QDs. Using spectrally narrow pulses, detrimental effect of the inhomogeneous broadening is reduced since only the QDs with transitions resonant with the pulse wavelength are addressed and participate in the EIT. The effect has been observed at temperatures up to 140K.
We numerically investigate the electromagnetically induced transparency (EIT) of a hybrid system consisting of a three-level quantum dot (QD) in the vicinity of vanadium dioxide nanoparticle (VO2NP). VO2NP has semiconductor and metallic phases where the transition between the two phases occurs around a critical temperature. When the QD-VO2NP hybrid system interacts with continuous wave laser fields in an infrared regime, it supports a coherent coupling of exciton–polariton and exciton–plasmon polariton in semiconductor and metal phases of VO2NP, respectively. In our calculations a filling fraction factor controls the VO2NP phase transition. A probe and control laser field configuration is studied for the hybrid system to measure the absorption of QD through the filling fraction factor manipulations. We show that for the VO2NP semiconductor phase and proper geometrical configuration, the absorption spectrum profile of the QD represents an EIT with two peaks and a clear minimum. These two peaks merge to one through the VO2NP phase transition to metal. We also show that the absorption spectrum profile is modified by different orientations of the laser fields with the axis of the QD-VO2NP hybrid system. The innovation in comparison to other research in the field is that robust variation in the absorption profile through EIT is due to the phase transition in VO2NP without any structural change in the QD-VO2NP hybrid system. Our results can be employed to design nanothermal sensors, optical nanoswitches, and energy transfer devices.
The electronic states of InAs/GaAs quantum dot has investigated for triple conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage. Tunneling-induced transparency (TIT) in triple InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The interdot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in triple InAs/GaAs quantum dots controlled by electric fields.