Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of Microelectromechanical Systems

Fabrication of a Monolithic Array of Three Dimensional Si-based Ion Traps

Patrick See, G. Wilpers, Patrick Robert Gill, Alastair G. Sinclair

Published Sep 25, 2013• 12 citations
Publisher

Abstract

Segmented linear ion trap arrays are versatile devices that are increasingly used to study quantum physics and demonstrate the fundamental principles of quantum information processing. Traps with three-dimensional (3-D) electrode geometries can create a superior confining potential for ions. However, the realization of a monolithic 3-D microchip trap with scalable fabrication technology remains challenging. In this paper the microfabrication of a monolithic array of 3-D ion microtraps in a semiconductor chip is presented. The electrode structure is formed by micromachining a silica-on-silicon wafer and metallizing the dielectric with gold. The fabrication method uses conventional semiconductor wafer processing tools and techniques. The specific operating characteristics which demonstrate the suitability of the chosen material system and fabrication process are presented.

DOI
10.1109/jmems.2013.2262573

Related papers

Monolithic microfabricated ion trap chip design for scaleable quantum processors

Michael Brownnutt, G. Wilpers, Patrick Robert Gill +2 more

A design is proposed for a novel ion trap quantum processor chip, microfabricated using a process based on planar silica-on-silicon techniques. The trap electrodes are of gold-coated silica and are spaced by highly doped silicon in a monolithic structure. This design allows a unit aspect-ratio trap with an ion-electrode separation below 100 μm, when using current fabrication techniques. The trapping potential is modelled and the operating parameters required to achieve motional frequencies of a few MHz are calculated. RF loss and the resultant heating of the trap chip are not found to be a factor limiting the trap's operation. This monolithic unit aspect-ratio trap is therefore expected to exhibit a deep potential well, high trap efficiency, and a low RF loss, when compared to other microfabricated traps. This technological approach is in principle scaleable to complex devices, and may form the basis for large-scale ion trap quantum processors.

New Journal of Physics•Oct 10, 2006•39 citations

Monolithic Microfabricated Symmetric Ion Trap for Quantum Information Processing

Fayaz A. Shaikh, Arkadaş Özakın, Jason Amini +7 more

We describe a novel monolithic ion trap that combines the flexibility and scalability of silicon microfabrication technologies with the superior trapping characteristics of traditional four-rod Paul traps. The performace of the proposed microfabricated trap approaches that of the macroscopic structures. The fabrication process creates an angled through-chip slot which allows backside ion loading and through-laser access while avoiding surface light scattering and dielectric charging. The trap geometry and dimensions are optimized for confining long ion chains with equal ion spacing [G.-D. Lin, et al., Europhys. Lett. 86, 60004 (2009)]. Control potentials have been derived to produce linear, equally spaced ion chains of up to 50 ions spaced at 10 um. With the deep trapping depths achievable in this design, we expect that these chains will be sufficiently long-lived to be used in quantum simulations of magnetic systems [E.E. Edwards, et al., Phys. Rev. B 82, 060412(R) (2010)]. The trap is currently being fabricated at Georgia Tech using VLSI techniques.

arXiv:1105.4909•May 24, 2011•1 citation

Geometries and fabrication methods for 3D printing ion traps

A. Quinn, Melanie Brown, Timothy J. Gardner +1 more

The majority of microfabricated ion traps in use for quantum information processing are of the 2D 'surface-electrode' type or of the 3D 'wafer' type. Surface-electrode traps greatly simplify fabrication and hold the promise of allowing trapped-ion quantum computers to scale via standard semiconductor industry fabrication techniques. However, their geometry constrains them to having much lower trapping efficiency, depth, and harmonicity compared to 3D geometries. Conversely 3D geometries offer superior trap performance but fabrication is more complex, limiting potential to scale. We describe new 'trench' geometries that exist in the design space between these two paradigms. They still allow for a simple, planar electrode layer but with much more favourable trapping properties. We propose such traps could be 3D-printed over a 2D wafer with microfabricated components already integrated into it, thus retaining all the integration techniques and scaling advantages of surface-electrode traps. As a proof of principle we use 2-photon direct laser writing lithography to print the required electrode structures with the proposed geometry.

arXiv:2205.15892•May 31, 2022•0 citations

Silicon microfabricated linear segmented ion traps for quantum technologies

Kaushal Choonee, G. Wilpers, Alastair G. Sinclair

This paper describes a microfabricated linear segmented RF Paul trap for atomic quantum technologies. The microtrap geometry, initially demonstrated in [1], has been augmented and includes a linear array of trapping segments. Trapping of individual and strings of 88Sr+ ions is demonstrated. The fabrication process has been optimized such that for 80 % of the fabricated devices, the achieved geometry is within ± 5 μm (or ± 3 %) of a prescribed design. This is critical for scalable quantum information processing, where arrays of traps with consistent parameters are required.

International Conference on Solid-State Sensors, Actuators and Microsystems•Jun 1, 2017•2 citations

A microfabricated surface-electrode ion trap in silicon

J. Britton, Dietrich G. Leibfried, James A. Beall +13 more

The prospect of building a quantum information processor underlies many recent advances ion trap fabrication techniques. Potentially, a quantum computer could be constructed from a large array of interconnected ion traps. We report on a micrometer-scale ion trap, fabricated from bulk silicon using micro-electromechanical systems (MEMS) techniques. The trap geometry is relatively simple in that the electrodes lie in a single plane beneath the ions. In such a trap we confine laser-cooled 24Mg+ ions approximately 40 microns above the surface. The fabrication technique and planar electrode geometry together make this approach amenable to scaling up to large trap arrays. In addition we observe that little laser cooling light is scattered by the electrodes.

arXiv:quant-ph/0605170•May 19, 2006•26 citations

A monolithic segmented 3D ion trap fabricated from fused silica by selective laser-induced etching

Edgar Brucke, Martin Wagener, Moritz Fontboté-Schmidt +10 more

We present the design, fabrication, and characterization of a monolithic, segmented, three-dimensional linear Paul ion trap for quantum science applications. The trap is fabricated from a single fused-silica block using selective laser-induced etching (SLE) and is subsequently metallized, forming electrodes isolated by self-shadowing trench structures without the need for layer alignment or external shadow masks. The segmented electrodes allow for shaping of the axial potential, enabling the creation of anharmonic potential wells, such as those required for equidistant ion strings. In addition, they enable shuttling and splitting of ion chains. We discuss key design choices and SLE-imposed constraints on achievable feature sizes, and evaluate electron-beam evaporation and magnetron sputtering as metallization approaches. Across two independent experimental setups, we demonstrate stable trapping and control of linear chains of up to 33 $^{40}$Ca$^+$ ions, including approximately equally spaced configurations. The measured secular frequencies in both traps agree with boundary-element simulations at the percent level, with residual deviations attributed to stray electric fields in the presence of anharmonic axial potentials, rather than fabrication imperfections. We measure axial micromotion field strengths on the order of 100 V/m along the trap axis, in approximate agreement with simulations. For radial mode frequencies near 2 MHz and an ion-electrode distance of 300 um, we measure heating rates of the order of 10 quanta/s in all but one motional mode, which is elevated by a technical noise source. The presented trap design is thus suitable for a wide range of quantum science applications and demonstrates the viability of SLE for the fabrication of finely segmented, monolithic, three-dimensional ion traps.

physics.atom-phCross-listedarXiv:2609.01694•Sep 2, 2026•0 citations
Segmented linear ion trap arrays are versatile devices that are increasingly used to study quantum physics and demonstrate the fundamental principles of quantum information processing. Traps with three-dimensional (3-D) electrode geometries can create a superior confining potential for ions. However, the realization of a monolithic 3-D microchip trap with scalable fabrication technology remains challenging. In this paper the microfabrication of a monolithic array of 3-D ion microtraps in a semiconductor chip is presented. The electrode structure is formed by micromachining a silica-on-silicon wafer and metallizing the dielectric with gold. The fabrication method uses conventional semiconductor wafer processing tools and techniques. The specific operating characteristics which demonstrate the suitability of the chosen material system and fabrication process are presented.
A design is proposed for a novel ion trap quantum processor chip, microfabricated using a process based on planar silica-on-silicon techniques. The trap electrodes are of gold-coated silica and are spaced by highly doped silicon in a monolithic structure. This design allows a unit aspect-ratio trap with an ion-electrode separation below 100 μm, when using current fabrication techniques. The trapping potential is modelled and the operating parameters required to achieve motional frequencies of a few MHz are calculated. RF loss and the resultant heating of the trap chip are not found to be a factor limiting the trap's operation. This monolithic unit aspect-ratio trap is therefore expected to exhibit a deep potential well, high trap efficiency, and a low RF loss, when compared to other microfabricated traps. This technological approach is in principle scaleable to complex devices, and may form the basis for large-scale ion trap quantum processors.
We describe a novel monolithic ion trap that combines the flexibility and scalability of silicon microfabrication technologies with the superior trapping characteristics of traditional four-rod Paul traps. The performace of the proposed microfabricated trap approaches that of the macroscopic structures. The fabrication process creates an angled through-chip slot which allows backside ion loading and through-laser access while avoiding surface light scattering and dielectric charging. The trap geometry and dimensions are optimized for confining long ion chains with equal ion spacing [G.-D. Lin, et al., Europhys. Lett. 86, 60004 (2009)]. Control potentials have been derived to produce linear, equally spaced ion chains of up to 50 ions spaced at 10 um. With the deep trapping depths achievable in this design, we expect that these chains will be sufficiently long-lived to be used in quantum simulations of magnetic systems [E.E. Edwards, et al., Phys. Rev. B 82, 060412(R) (2010)]. The trap is currently being fabricated at Georgia Tech using VLSI techniques.
The majority of microfabricated ion traps in use for quantum information processing are of the 2D 'surface-electrode' type or of the 3D 'wafer' type. Surface-electrode traps greatly simplify fabrication and hold the promise of allowing trapped-ion quantum computers to scale via standard semiconductor industry fabrication techniques. However, their geometry constrains them to having much lower trapping efficiency, depth, and harmonicity compared to 3D geometries. Conversely 3D geometries offer superior trap performance but fabrication is more complex, limiting potential to scale. We describe new 'trench' geometries that exist in the design space between these two paradigms. They still allow for a simple, planar electrode layer but with much more favourable trapping properties. We propose such traps could be 3D-printed over a 2D wafer with microfabricated components already integrated into it, thus retaining all the integration techniques and scaling advantages of surface-electrode traps. As a proof of principle we use 2-photon direct laser writing lithography to print the required electrode structures with the proposed geometry.
This paper describes a microfabricated linear segmented RF Paul trap for atomic quantum technologies. The microtrap geometry, initially demonstrated in [1], has been augmented and includes a linear array of trapping segments. Trapping of individual and strings of 88Sr+ ions is demonstrated. The fabrication process has been optimized such that for 80 % of the fabricated devices, the achieved geometry is within ± 5 μm (or ± 3 %) of a prescribed design. This is critical for scalable quantum information processing, where arrays of traps with consistent parameters are required.
The prospect of building a quantum information processor underlies many recent advances ion trap fabrication techniques. Potentially, a quantum computer could be constructed from a large array of interconnected ion traps. We report on a micrometer-scale ion trap, fabricated from bulk silicon using micro-electromechanical systems (MEMS) techniques. The trap geometry is relatively simple in that the electrodes lie in a single plane beneath the ions. In such a trap we confine laser-cooled 24Mg+ ions approximately 40 microns above the surface. The fabrication technique and planar electrode geometry together make this approach amenable to scaling up to large trap arrays. In addition we observe that little laser cooling light is scattered by the electrodes.
We present the design, fabrication, and characterization of a monolithic, segmented, three-dimensional linear Paul ion trap for quantum science applications. The trap is fabricated from a single fused-silica block using selective laser-induced etching (SLE) and is subsequently metallized, forming electrodes isolated by self-shadowing trench structures without the need for layer alignment or external shadow masks. The segmented electrodes allow for shaping of the axial potential, enabling the creation of anharmonic potential wells, such as those required for equidistant ion strings. In addition, they enable shuttling and splitting of ion chains. We discuss key design choices and SLE-imposed constraints on achievable feature sizes, and evaluate electron-beam evaporation and magnetron sputtering as metallization approaches. Across two independent experimental setups, we demonstrate stable trapping and control of linear chains of up to 33 40^{40}40Ca+^++ ions, including approximately equally spaced configurations. The measured secular frequencies in both traps agree with boundary-element simulations at the percent level, with residual deviations attributed to stray electric fields in the presence of anharmonic axial potentials, rather than fabrication imperfections. We measure axial micromotion field strengths on the order of 100 V/m along the trap axis, in approximate agreement with simulations. For radial mode frequencies near 2 MHz and an ion-electrode distance of 300 um, we measure heating rates of the order of 10 quanta/s in all but one motional mode, which is elevated by a technical noise source. The presented trap design is thus suitable for a wide range of quantum science applications and demonstrates the viability of SLE for the fabrication of finely segmented, monolithic, three-dimensional ion traps.