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arXiv:2609.01694

A monolithic segmented 3D ion trap fabricated from fused silica by selective laser-induced etching

Edgar Brucke, Martin Wagener, Moritz Fontboté-Schmidt, Philip Leindecker, Matteo Marinelli, Vlad Negnevitsky, Ilia Sergachev, Grégoire F. M. Tomassi, Paul Venetz, Stephan Welte, Jonathan Home, Daniel Kienzler, Cornelius Hempel

physics.atom-phquant-phSubmitted Sep 1, 2026• Announced Sep 2, 2026• 0 citations
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Abstract

We present the design, fabrication, and characterization of a monolithic, segmented, three-dimensional linear Paul ion trap for quantum science applications. The trap is fabricated from a single fused-silica block using selective laser-induced etching (SLE) and is subsequently metallized, forming electrodes isolated by self-shadowing trench structures without the need for layer alignment or external shadow masks. The segmented electrodes allow for shaping of the axial potential, enabling the creation of anharmonic potential wells, such as those required for equidistant ion strings. In addition, they enable shuttling and splitting of ion chains. We discuss key design choices and SLE-imposed constraints on achievable feature sizes, and evaluate electron-beam evaporation and magnetron sputtering as metallization approaches. Across two independent experimental setups, we demonstrate stable trapping and control of linear chains of up to 33 $^{40}$Ca$^+$ ions, including approximately equally spaced configurations. The measured secular frequencies in both traps agree with boundary-element simulations at the percent level, with residual deviations attributed to stray electric fields in the presence of anharmonic axial potentials, rather than fabrication imperfections. We measure axial micromotion field strengths on the order of 100 V/m along the trap axis, in approximate agreement with simulations. For radial mode frequencies near 2 MHz and an ion-electrode distance of 300 um, we measure heating rates of the order of 10 quanta/s in all but one motional mode, which is elevated by a technical noise source. The presented trap design is thus suitable for a wide range of quantum science applications and demonstrates the viability of SLE for the fabrication of finely segmented, monolithic, three-dimensional ion traps.

Comments
13 pages, 7 figures

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Selective Laser-induced Etching (SLE) is a manufacturing process which enables the fabrication of three-dimensional parts from transparent materials with unique freedom of geometry and high precision. First, the outer contour of the part is inscribed in the material using focused ultrashort pulsed laser radiation. Second, the modified design is exposed from the bulk material using wet chemical etching. We analyze the possibility of using SLE for the machining of next generation fused silica ion traps suitable for quantum computing. Such ion traps require an enhanced functionality in combination with reduced error sources and a reproducible manufacturing process. Ion trap designs with three-dimensional features in the micrometer regime are developed to meet these requirements. Challenges of the SLE process arising from the ion trap design and its dimensions are discussed. Different process strategies to fabricate single ion trap components as well as complete ion traps are examined. We demonstrate that next generation ion traps can be machined using SLE and outline the way towards a fabrication on wafer level.
Abstract We describe the implementation of a three-dimensional Paul ion trap fabricated from a stack of precision-machined silica glass wafers, which incorporates a pair of junctions for two-dimensional ion transport. The trap has 142 dedicated electrodes which can be used to define multiple potential wells in which strings of ions can be held. By supplying time-varying potentials, this also allows for transport and re-configuration of ion strings. We describe the design, simulation, fabrication and packaging of the trap, including explorations of different parameter regimes and possible optimizations and design choices. We give results of initial testing of the trap, including measurements of heating rates and junction transport.