Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Laser-based Micro- and Nanoprocessing

Selective laser-induced etching for 3D ion traps

Sebastian Johann Simeth, Alexander Müller, Jan Müller, Bjoern Lekitsch, Martin Reininghaus, Ferdinand Schmidt‐Kaler

Published Mar 17, 2023• 4 citations
Publisher

Abstract

Selective Laser-induced Etching (SLE) is a manufacturing process which enables the fabrication of three-dimensional parts from transparent materials with unique freedom of geometry and high precision. First, the outer contour of the part is inscribed in the material using focused ultrashort pulsed laser radiation. Second, the modified design is exposed from the bulk material using wet chemical etching. We analyze the possibility of using SLE for the machining of next generation fused silica ion traps suitable for quantum computing. Such ion traps require an enhanced functionality in combination with reduced error sources and a reproducible manufacturing process. Ion trap designs with three-dimensional features in the micrometer regime are developed to meet these requirements. Challenges of the SLE process arising from the ion trap design and its dimensions are discussed. Different process strategies to fabricate single ion trap components as well as complete ion traps are examined. We demonstrate that next generation ion traps can be machined using SLE and outline the way towards a fabrication on wafer level.

DOI
10.1117/12.2647189

Related papers

A monolithic segmented 3D ion trap fabricated from fused silica by selective laser-induced etching

Edgar Brucke, Martin Wagener, Moritz Fontboté-Schmidt +10 more

We present the design, fabrication, and characterization of a monolithic, segmented, three-dimensional linear Paul ion trap for quantum science applications. The trap is fabricated from a single fused-silica block using selective laser-induced etching (SLE) and is subsequently metallized, forming electrodes isolated by self-shadowing trench structures without the need for layer alignment or external shadow masks. The segmented electrodes allow for shaping of the axial potential, enabling the creation of anharmonic potential wells, such as those required for equidistant ion strings. In addition, they enable shuttling and splitting of ion chains. We discuss key design choices and SLE-imposed constraints on achievable feature sizes, and evaluate electron-beam evaporation and magnetron sputtering as metallization approaches. Across two independent experimental setups, we demonstrate stable trapping and control of linear chains of up to 33 $^{40}$Ca$^+$ ions, including approximately equally spaced configurations. The measured secular frequencies in both traps agree with boundary-element simulations at the percent level, with residual deviations attributed to stray electric fields in the presence of anharmonic axial potentials, rather than fabrication imperfections. We measure axial micromotion field strengths on the order of 100 V/m along the trap axis, in approximate agreement with simulations. For radial mode frequencies near 2 MHz and an ion-electrode distance of 300 um, we measure heating rates of the order of 10 quanta/s in all but one motional mode, which is elevated by a technical noise source. The presented trap design is thus suitable for a wide range of quantum science applications and demonstrates the viability of SLE for the fabrication of finely segmented, monolithic, three-dimensional ion traps.

physics.atom-phCross-listedarXiv:2609.01694•Sep 2, 2026•0 citations

SELECTIVE LASER ETCHING: AN ENABLING TECHNOLOGY FOR BOOSTING QUANTUM COMPUTING?

A. Bautista-Salvador, C. Ospelkaus

The potential positive impact of quantum computing in several industrial sectors has raised a worldwide effort for the development of a practical quantum computer. In this paper we review on the current key technologies promising to impact the realization of a trapped-ion quantum computer. We focus our discussion on a 3D glass printing technique – selective laser-induced etching (SLE). This technology will facilitate the integration of optical and electronic components and will ultimately be a booster to reach the next level of technological readiness required to implement proof of concept applications.

•Dec 13, 2022•0 citations

Segmented ion-trap fabrication using high precision stacked wafers

Simon Ragg, Chiara Decaroli, Thomas A. Lutz +1 more

We describe the use of laser-enhanced etching of fused silica in order to build multilayer ion traps. This technique offers high precision of both machining and alignment of adjacent wafers. As examples of designs taking advantage of this possibility, we describe traps for realizing two key elements of scaling trapped ion systems. The first is a trap for a cavity-QED interface between single ions and photons, in which the fabrication allows shapes that provide good electrostatic shielding of the ion from charge buildup on the mirror surfaces. The second incorporates two X-junctions allowing two-dimensional shuttling of ions. Here, we are able to investigate designs which explore a trade-off between pseudopotential barriers and confinement at the junction center. In both cases, we illustrate the design constraints arising from the fabrication.

•Oct 1, 2019•21 citations

Segmented ion-trap fabrication using high precision stacked wafers

Simon Ragg, Chiara Decaroli, Thomas Lutz +1 more

We describe the use of laser-enhanced etching of fused silica in order to build multilayer ion traps. This technique offers high precision of both machining and alignment of adjacent wafers. As examples of designs taking advantage of this possibility, we describe traps for realizing two key elements of scaling trapped ion systems. The first is a trap for a cavity-QED interface between single ions and photons, in which the fabrication allows shapes that provide good electrostatic shielding of the ion from charge buildup on the mirror surfaces. The second incorporates two X-junctions allowing two-dimensional shuttling of ions. Here, we are able to investigate designs which explore a trade-off between pseudopotential barriers and confinement at the junction center. In both cases, we illustrate the design constraints arising from the fabrication.

arXiv:1907.05329•Review of Scientific Instruments•Oct 1, 2019•25 citations

A versatile laser-machined rf trap for arrays of 100+ ions

Frank G. Schroer, Ilyoung Jung, Thomas W. Burkle +4 more

Large ion crystals in diverse geometries are a key resource for quantum simulation experiments. In this work, we introduce a macroscopic rf trap that supports a wide variety of one-dimensional ion configurations as well as lateral two-dimensional crystals with more than 100 ions. Our design is based on precision-machined fused silica wafers that are stacked to form the trap structure. Ten independently biased electrodes provide flexible control over the axial potential, enabling long one-dimensional crystals, isospaced ion strings, split-well chains, and two-dimensional arrays with tunable aspect ratios. We present the design and fabrication process for this trap and demonstrate the ability to tune the radial secular frequencies, detect and compensate micromotion, rotate the principal axes, and characterize trapped ion heating rates. All trap design and documentation files are freely available alongside this work, to facilitate adoption and further development within the ion trap community.

quant-pharXiv:2607.13342•Jul 16, 2026•0 citations

3D-Printed Micro Ion Trap Technology for Scalable Quantum Information Processing

Shuqi Xu, Xiaoxing Xia, Qian Yu +7 more

Trapped-ion applications, such as in quantum information, precision measurements, optical clocks, and mass spectrometry, rely on specialized high-performance ion traps. The latter applications typically employ traditional machining to customize macroscopic 3D Paul traps, while quantum information processing experiments usually rely on photo-lithographic techniques to miniaturize the traps and meet scalability requirements. Using photolithography, however, it is challenging to fabricate the complex three-dimensional electrode structures required for optimal confinement. Here we address these limitations by adopting a high-resolution 3D printing technology based on two-photon polymerization supporting fabrication of large arrays of high-performance miniaturized 3D traps. We show that 3D-printed ion traps combine the advantages of traditionally machined 3D traps with the miniaturization provided by photolithography by confining single calcium ions in a small 3D-printed ion trap with radial trap frequencies ranging from 2 MHz to 24 MHz. The tight confinement eases ion cooling requirements and allows us to demonstrate high-fidelity coherent operations on an optical qubit after only Doppler cooling. With 3D printing technology, the design freedom is drastically expanded without sacrificing scalability and precision so that ion trap geometries can be optimized for higher performance and better functionality.

arXiv:2310.00595•Oct 1, 2023•2 citations
Selective Laser-induced Etching (SLE) is a manufacturing process which enables the fabrication of three-dimensional parts from transparent materials with unique freedom of geometry and high precision. First, the outer contour of the part is inscribed in the material using focused ultrashort pulsed laser radiation. Second, the modified design is exposed from the bulk material using wet chemical etching. We analyze the possibility of using SLE for the machining of next generation fused silica ion traps suitable for quantum computing. Such ion traps require an enhanced functionality in combination with reduced error sources and a reproducible manufacturing process. Ion trap designs with three-dimensional features in the micrometer regime are developed to meet these requirements. Challenges of the SLE process arising from the ion trap design and its dimensions are discussed. Different process strategies to fabricate single ion trap components as well as complete ion traps are examined. We demonstrate that next generation ion traps can be machined using SLE and outline the way towards a fabrication on wafer level.
We present the design, fabrication, and characterization of a monolithic, segmented, three-dimensional linear Paul ion trap for quantum science applications. The trap is fabricated from a single fused-silica block using selective laser-induced etching (SLE) and is subsequently metallized, forming electrodes isolated by self-shadowing trench structures without the need for layer alignment or external shadow masks. The segmented electrodes allow for shaping of the axial potential, enabling the creation of anharmonic potential wells, such as those required for equidistant ion strings. In addition, they enable shuttling and splitting of ion chains. We discuss key design choices and SLE-imposed constraints on achievable feature sizes, and evaluate electron-beam evaporation and magnetron sputtering as metallization approaches. Across two independent experimental setups, we demonstrate stable trapping and control of linear chains of up to 33 40^{40}40Ca+^++ ions, including approximately equally spaced configurations. The measured secular frequencies in both traps agree with boundary-element simulations at the percent level, with residual deviations attributed to stray electric fields in the presence of anharmonic axial potentials, rather than fabrication imperfections. We measure axial micromotion field strengths on the order of 100 V/m along the trap axis, in approximate agreement with simulations. For radial mode frequencies near 2 MHz and an ion-electrode distance of 300 um, we measure heating rates of the order of 10 quanta/s in all but one motional mode, which is elevated by a technical noise source. The presented trap design is thus suitable for a wide range of quantum science applications and demonstrates the viability of SLE for the fabrication of finely segmented, monolithic, three-dimensional ion traps.
The potential positive impact of quantum computing in several industrial sectors has raised a worldwide effort for the development of a practical quantum computer. In this paper we review on the current key technologies promising to impact the realization of a trapped-ion quantum computer. We focus our discussion on a 3D glass printing technique – selective laser-induced etching (SLE). This technology will facilitate the integration of optical and electronic components and will ultimately be a booster to reach the next level of technological readiness required to implement proof of concept applications.
We describe the use of laser-enhanced etching of fused silica in order to build multilayer ion traps. This technique offers high precision of both machining and alignment of adjacent wafers. As examples of designs taking advantage of this possibility, we describe traps for realizing two key elements of scaling trapped ion systems. The first is a trap for a cavity-QED interface between single ions and photons, in which the fabrication allows shapes that provide good electrostatic shielding of the ion from charge buildup on the mirror surfaces. The second incorporates two X-junctions allowing two-dimensional shuttling of ions. Here, we are able to investigate designs which explore a trade-off between pseudopotential barriers and confinement at the junction center. In both cases, we illustrate the design constraints arising from the fabrication.
We describe the use of laser-enhanced etching of fused silica in order to build multilayer ion traps. This technique offers high precision of both machining and alignment of adjacent wafers. As examples of designs taking advantage of this possibility, we describe traps for realizing two key elements of scaling trapped ion systems. The first is a trap for a cavity-QED interface between single ions and photons, in which the fabrication allows shapes that provide good electrostatic shielding of the ion from charge buildup on the mirror surfaces. The second incorporates two X-junctions allowing two-dimensional shuttling of ions. Here, we are able to investigate designs which explore a trade-off between pseudopotential barriers and confinement at the junction center. In both cases, we illustrate the design constraints arising from the fabrication.
Large ion crystals in diverse geometries are a key resource for quantum simulation experiments. In this work, we introduce a macroscopic rf trap that supports a wide variety of one-dimensional ion configurations as well as lateral two-dimensional crystals with more than 100 ions. Our design is based on precision-machined fused silica wafers that are stacked to form the trap structure. Ten independently biased electrodes provide flexible control over the axial potential, enabling long one-dimensional crystals, isospaced ion strings, split-well chains, and two-dimensional arrays with tunable aspect ratios. We present the design and fabrication process for this trap and demonstrate the ability to tune the radial secular frequencies, detect and compensate micromotion, rotate the principal axes, and characterize trapped ion heating rates. All trap design and documentation files are freely available alongside this work, to facilitate adoption and further development within the ion trap community.
Trapped-ion applications, such as in quantum information, precision measurements, optical clocks, and mass spectrometry, rely on specialized high-performance ion traps. The latter applications typically employ traditional machining to customize macroscopic 3D Paul traps, while quantum information processing experiments usually rely on photo-lithographic techniques to miniaturize the traps and meet scalability requirements. Using photolithography, however, it is challenging to fabricate the complex three-dimensional electrode structures required for optimal confinement. Here we address these limitations by adopting a high-resolution 3D printing technology based on two-photon polymerization supporting fabrication of large arrays of high-performance miniaturized 3D traps. We show that 3D-printed ion traps combine the advantages of traditionally machined 3D traps with the miniaturization provided by photolithography by confining single calcium ions in a small 3D-printed ion trap with radial trap frequencies ranging from 2 MHz to 24 MHz. The tight confinement eases ion cooling requirements and allows us to demonstrate high-fidelity coherent operations on an optical qubit after only Doppler cooling. With 3D printing technology, the design freedom is drastically expanded without sacrificing scalability and precision so that ion trap geometries can be optimized for higher performance and better functionality.