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SELECTIVE LASER ETCHING: AN ENABLING TECHNOLOGY FOR BOOSTING QUANTUM COMPUTING?

A. Bautista-Salvador, C. Ospelkaus

Published Dec 13, 2022• 0 citations
Publisher

Abstract

The potential positive impact of quantum computing in several industrial sectors has raised a worldwide effort for the development of a practical quantum computer. In this paper we review on the current key technologies promising to impact the realization of a trapped-ion quantum computer. We focus our discussion on a 3D glass printing technique – selective laser-induced etching (SLE). This technology will facilitate the integration of optical and electronic components and will ultimately be a booster to reach the next level of technological readiness required to implement proof of concept applications.

DOI
10.5281/zenodo.7431542

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The potential positive impact of quantum computing in several industrial sectors has raised a worldwide effort for the development of a practical quantum computer. In this paper we review on the current key technologies promising to impact the realization of a trapped-ion quantum computer. We focus our discussion on a 3D glass printing technique – selective laser-induced etching (SLE). This technology will facilitate the integration of optical and electronic components and will ultimately be a booster to reach the next level of technological readiness required to implement proof of concept applications.
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Trapped ions are among the most promising systems for practical quantum computing (QC). The basic requirements for universal QC have all been demonstrated with ions, and quantum algorithms using few-ion-qubit systems have been implemented. We review the state of the field, covering the basics of how trapped ions are used for QC and their strengths and limitations as qubits. In addition, we discuss what is being done, and what may be required, to increase the scale of trapped ion quantum computers while mitigating decoherence and control errors. Finally, we explore the outlook for trapped-ion QC. In particular, we discuss near-term applications, considerations impacting the design of future systems of trapped ions, and experiments and demonstrations that may further inform these considerations.
We present the design, fabrication, and characterization of a monolithic, segmented, three-dimensional linear Paul ion trap for quantum science applications. The trap is fabricated from a single fused-silica block using selective laser-induced etching (SLE) and is subsequently metallized, forming electrodes isolated by self-shadowing trench structures without the need for layer alignment or external shadow masks. The segmented electrodes allow for shaping of the axial potential, enabling the creation of anharmonic potential wells, such as those required for equidistant ion strings. In addition, they enable shuttling and splitting of ion chains. We discuss key design choices and SLE-imposed constraints on achievable feature sizes, and evaluate electron-beam evaporation and magnetron sputtering as metallization approaches. Across two independent experimental setups, we demonstrate stable trapping and control of linear chains of up to 33 40^{40}40Ca+^++ ions, including approximately equally spaced configurations. The measured secular frequencies in both traps agree with boundary-element simulations at the percent level, with residual deviations attributed to stray electric fields in the presence of anharmonic axial potentials, rather than fabrication imperfections. We measure axial micromotion field strengths on the order of 100 V/m along the trap axis, in approximate agreement with simulations. For radial mode frequencies near 2 MHz and an ion-electrode distance of 300 um, we measure heating rates of the order of 10 quanta/s in all but one motional mode, which is elevated by a technical noise source. The presented trap design is thus suitable for a wide range of quantum science applications and demonstrates the viability of SLE for the fabrication of finely segmented, monolithic, three-dimensional ion traps.
Trapped ions are among the most promising platforms for realizing a large-scale quantum information processor. Current progress focuses on integrating optical and electronic components into microfabricated ion traps to allow scaling to large numbers of ion qubits. Most available fabrication strategies for such integrated processors employ monolithic integration of all processor components and rely heavily on CMOS-compatible semiconductor fabrication technologies that are not optimized for the requirements of a trapped-ion quantum processor. In this work, we present a modular approach in which the processor modules, called chiplets, have specific functions and are fabricated separately. The individual chiplets are then combined using heterogeneous integration techniques. This strategy opens up the possibility of choosing the optimal materials and fabrication technology for each of the chiplets, with a minimum amount of fabrication limitations compared to the monolithic approach. Chiplet technology furthermore enables novel processor functionalities to be added in a cost-effective, modular fashion by adding or modifying only a subset of the chiplets. We describe the design concept of a chiplet-based trapped-ion quantum processor and demonstrate the technology with an example of an integrated individual-ion addressing system for a ten-ion crystal. The addressing system emphasizes the modularity of the chiplet approach, combining a surface ion trap manufactured on a glass substrate with a silicon substrate carrying integrated waveguides and a stack of 3D-printed micro-optics, achieving diffraction-limited focal spots at the ion positions.
Integrated optical control of trapped-ion qubits leveraging dielectric waveguides photonics within planar-fabricated trap devices offers routes to scaling the optical control critical to trapped-ion quantum computing. The ultraviolet to infrared functionality required for many atomic systems, the multiple metal layers for large-scale trap arrays, and the long-term interest in integration of active functionality and integrated electronics motivates development of foundry-based platforms for such systems, to facilitate accessibility to the complex fabrication involved. Aside from scaling, utilization of such technology in trapped-ion quantum systems further stands to alleviate limitations on basic physical operations employed in both quantum computing and metrology, which experiments are starting to demonstrate. I will summarize our recent results using phase-stable standing-wave delivery practically enabled by integrated photonic addressing to enhance ground-state laser cooling, which we experimentally demonstrate using trap devices with integrated Al2O3 and Si3N4 waveguides for UV-NIR addressing fabricated in a commercial foundry. I will also discuss relevance of similar ideas to alleviating power requirements in laser-based entangling gates, and work in progress towards experimental realization, including in a 300 mm-wafer foundry platform for such devices in development.