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IEEE Journal of Quantum Electronics

Optical bistability in semiconductors

David A. B. Miller, S. Smith, C. T. Seaton

Published Mar 1, 1981• 90 citations
Publisher

Abstract

Detailed results are presented on optical bistability (OB) and two-beam optical transistor (transphasor) action in simple, one-element Fabry-Perot devices, with the semiconductor InSb using a CW CO laser near the bandgap region, and OB for semiconductors in general is discussed. OB and multistability are seen in transmission and reflection at 5 K. At 77 K,n_{2} \simeq 3 \times 10^{-3}cm2/W [corresponding to an effective\chi^{(3)} \sim 1ESU] is measured and OB is observed at ∼8 mW. Transphasor action at 5 K is presented and the influence of degenerate four-wave mixing is discussed. The basic physics of the microscopic mechanism for n2(bandgap-resonant saturation) is summarized and a simplified, generalized model is derived. This model and arguments on cavity optimization are used to predict order of magnitude limits to switching power, energy, and speed, both in InSb and other semiconductors, even in the absence of excitonic enhancement.

DOI
10.1109/jqe.1981.1071116

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Final Technical Report•Nov 1, 1984•0 citations
Detailed results are presented on optical bistability (OB) and two-beam optical transistor (transphasor) action in simple, one-element Fabry-Perot devices, with the semiconductor InSb using a CW CO laser near the bandgap region, and OB for semiconductors in general is discussed. OB and multistability are seen in transmission and reflection at 5 K. At 77 K,n_{2} \simeq 3 \times 10^{-3}cm2/W [corresponding to an effective\chi^{(3)} \sim 1ESU] is measured and OB is observed at ∼8 mW. Transphasor action at 5 K is presented and the influence of degenerate four-wave mixing is discussed. The basic physics of the microscopic mechanism for n2(bandgap-resonant saturation) is summarized and a simplified, generalized model is derived. This model and arguments on cavity optimization are used to predict order of magnitude limits to switching power, energy, and speed, both in InSb and other semiconductors, even in the absence of excitonic enhancement.
We report the realisation of optically bistable switching and memory elements, and the transphasor Can all-optical transistor) in simple one element nonlinear Fabry-Perot interferometers made from the semiconductor InSb. These devices, which operate at 5 K and 77 K with mW powers from a cw CO laser between 5 and 6 μm rely on a strongly intensity-dependent refractive index discovered near the bandgap region of InSb and explained by bandgap resonant saturation. Switching speeds are shown to be < 500 ns in these first devices and operation to much shorter timescales is predicted. Operation at room temperature and in other semiconductors at other wavelengths remains a possibility and such devices offer considerable potential for all-optical switching in integrated optics and laser pulse control.
We report the observation of optical stability for a plane parallel semiconductor crystal which forms a Fabry-Perot interferometer using only the natural reflectivity of its surfaces. Nonlinear transmission is observed for cw laser intensities above ∼ 100 W/cm2 for radiation at 1895 cm−1 near the energy gap of InSb at 5 K. The effect is interpreted in terms of a very large intensity-dependent refractive index giving a 5λ/2 optical thickness change for an intensity of ∼2 kW/cm2. Clear bistability is seen in fifth-order interference, the first such observation above first order in an intrinsic, one-element system, in addition to regions exhibiting signal amplification. The same crystal also shows strong modulation of the transmission of one laser beam induced by a second, with real signal gain, thus demonstrating an ’’optical transistor.’’
Optical bistability (OB) can be defined as the existence of two stable states for one set of optical input conditions. It can be seen in many different systems which generally combine some microscopic nonlinearity (e.g., intensity-dependent refractive index) with some macroscopic feedback (e.g., a Fabry-Perot cavity). OB shows not only hysteresis but also switching transitions. By adjusting the degree of feedback various related effects are also possible (e.g., optical limiters, optical transistors, and several kinds of oscillation phenomena).
Gives a broad description of optical bistability: from practical applications, as an optical transistor or optical memory element, to its phase transition interpretation. The theory is divided into three parts. The first is a simple discussion that covers most of the basic experimental effects and concepts of practical importance. The second part applies to atomic system where a semiclassical as well as a quantum-mechanical approach is possible. The third one discusses the mechanisms compatible with large nonlinearities observed in InSb and GaAs as semiconductors constitute the most promising materials for applications. Current experimental progress in all-optical and hybrid devices is also discussed and scaling example is presented to indicate the possibilities in high-speed all-optical signal processing.
We present an overview of the properties and applications of optical bistability in vertical-cavity semiconductor optical amplifiers (VCSOAs). The basic physics and analytical models of this optical nonlinearity are discussed. Experimental results obtained from a VCSOA operated in the 850 nm wavelength region are presented. Counterclockwise hysteresis loops are obtained over a range of initial phase detuning and bias currents. One hysteresis loop is observed experimentally with an input power as low as 2 muW when the device is biased at 98% of its lasing threshold. Numerical simulations based on the Fabry-Perot resonator model and rate equations we developed show good agreement with our experimental observations. In addition, a low input intensity high contrast (10:1) optical and gate and 2R regeneration are demonstrated. We believe that bistable VCSOAs can significantly advance the prospect of a dense two-dimensional array of low-switching-intensity all-optical logic and memory elements.
This report covers work conducted from February 1982 to February 1983 on the nonlinear optical properties of semiconductors using tunable (bandgap resonant) laser sources. Emphasis is on Carbon Monoxide (CO) Indium Antimonides (InSb) at 77K, but an optical parametric amplifier is constructed for future work on systems at shorter wavelengths. The Optical Bistability and device properties of InSb have been investigated. Operation of a slice of InSb, held at 77K, pumped by a continuous wave CO laser, as an optical AND gate, triggered by 30 ps pulses at wavelength 1.06 micron with energies of 5 nJ, is demonstrated. By using temporal separation of the trigger pulses, information on the carrier dynamics is obtained. The design and construction of an angle tuned Optical Parametric Amplifier consisting of a lithium niobate crystal pumped by a 30 ps pulse from a neodymium YAG laser has been achieved.