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Applied Physics Letters

Optical bistability and signal amplification in a semiconductor crystal: applications of new low-power nonlinear effects in InSb

David A. B. Miller, Stanley Desmond Smith, A.M. Johnston

Published Nov 1, 1979• 310 citations
Publisher

Abstract

We report the observation of optical stability for a plane parallel semiconductor crystal which forms a Fabry-Perot interferometer using only the natural reflectivity of its surfaces. Nonlinear transmission is observed for cw laser intensities above ∼ 100 W/cm2 for radiation at 1895 cm−1 near the energy gap of InSb at 5 K. The effect is interpreted in terms of a very large intensity-dependent refractive index giving a 5λ/2 optical thickness change for an intensity of ∼2 kW/cm2. Clear bistability is seen in fifth-order interference, the first such observation above first order in an intrinsic, one-element system, in addition to regions exhibiting signal amplification. The same crystal also shows strong modulation of the transmission of one laser beam induced by a second, with real signal gain, thus demonstrating an ’’optical transistor.’’

DOI
10.1063/1.91245

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In the last chapter, we examined the effect of cubic nonlinearity on selfrefraction of an optical beam. We have also seen that the presence of a quadratic nonlinearity can also contribute to change in the profile of a Gaussian beam in a crystal. In this chapter we will see how the effect of nonlinearity, alongwith the proper feedback, can give rise to optical bistability and hysteresis. This is not unexpected as hysteresis and bistability are also observed in nonlinear electronic circuits with feedback, such as in the Schmitt trigger, as well as in hybrid optical devices, such as an acoustooptic device with feedback (Banerjee and Poon, 1991). In what follows, we will examine two different types of optically bistable devices based on optical nonlinearities. The first is a nonlinear ring resonator comprising a two-level gain medium as the nonlinear element. We will treat both absorptive and dispersive bistability. Absorptive bistability is the case when the incident optical frequency is close to or equal to the transition frequency of the atoms from one level to another. In this case, the absorption coefficient becomes a nonlinear function of the incident intensity. On the other hand, if the frequencies are far apart, the medium behaves like a Kerr-type material and the system exhibits what is called dispersive bistability. In this case the material can be modeled by an effective n2 or v (3), meaning that the refractive index becomes a nonlinear function of the optical intensity. The second configurationwewill examine is a linear-nonlinear interface. In this case, the interface provides the feedback due to refractive index mismatch. In fact, the reflection coefficient (as well as the transmission coefficient) is modified due to the nonlinearity, which, as we shall see later, is responsible for demonstrating optical switching and bistability.

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Philosophical Transactions of the Royal Society of London Series A Mathematical and Physical Sciences•Dec 18, 1984•8 citations
We report the observation of optical stability for a plane parallel semiconductor crystal which forms a Fabry-Perot interferometer using only the natural reflectivity of its surfaces. Nonlinear transmission is observed for cw laser intensities above ∼ 100 W/cm2 for radiation at 1895 cm−1 near the energy gap of InSb at 5 K. The effect is interpreted in terms of a very large intensity-dependent refractive index giving a 5λ/2 optical thickness change for an intensity of ∼2 kW/cm2. Clear bistability is seen in fifth-order interference, the first such observation above first order in an intrinsic, one-element system, in addition to regions exhibiting signal amplification. The same crystal also shows strong modulation of the transmission of one laser beam induced by a second, with real signal gain, thus demonstrating an ’’optical transistor.’’
We report the realisation of optically bistable switching and memory elements, and the transphasor Can all-optical transistor) in simple one element nonlinear Fabry-Perot interferometers made from the semiconductor InSb. These devices, which operate at 5 K and 77 K with mW powers from a cw CO laser between 5 and 6 μm rely on a strongly intensity-dependent refractive index discovered near the bandgap region of InSb and explained by bandgap resonant saturation. Switching speeds are shown to be < 500 ns in these first devices and operation to much shorter timescales is predicted. Operation at room temperature and in other semiconductors at other wavelengths remains a possibility and such devices offer considerable potential for all-optical switching in integrated optics and laser pulse control.
Detailed results are presented on optical bistability (OB) and two-beam optical transistor (transphasor) action in simple, one-element Fabry-Perot devices, with the semiconductor InSb using a CW CO laser near the bandgap region, and OB for semiconductors in general is discussed. OB and multistability are seen in transmission and reflection at 5 K. At 77 K,n_{2} \simeq 3 \times 10^{-3}cm2/W [corresponding to an effective\chi^{(3)} \sim 1ESU] is measured and OB is observed at ∼8 mW. Transphasor action at 5 K is presented and the influence of degenerate four-wave mixing is discussed. The basic physics of the microscopic mechanism for n2(bandgap-resonant saturation) is summarized and a simplified, generalized model is derived. This model and arguments on cavity optimization are used to predict order of magnitude limits to switching power, energy, and speed, both in InSb and other semiconductors, even in the absence of excitonic enhancement.
Refractive changes in semiconductors used in optical bistability are induced as a result of excitations generated by intense light levels. To date such excitations have been either electronic (carriers excited to higher energy states) as in InSb or thermal as in ZnSe. Usually such refractive index changes are small and it is necessary to introduce some form of optical feedback in order to obtain a useful change in the output signal. Various configurations which provide optical feedback are examined and the optimisation for low switching power levels is addressed.
Optical bistability can be obtained in nonlinear materials either with Fabry-Perot mirrors or without external feedback. When a material is placed between partially reflecting mirrors, a nonlinear Fabry-Perot etalon is formed with the etalon providing an external feedback. Optical bistability and gating occur as a result of a shift in the Fabry-Perot peak when the light intensity is increased (or when a second laser beam is introduced into the cavity). Optical bistability with the external feedback mechanism has been observed in many semiconductors such as bulk GaAs, GaAs-AIGaAs multiple-quantum-well (MQW) structures, InSb, InAs, CdS, CdHgTe, GaSe, and CuCI.
In the last chapter, we examined the effect of cubic nonlinearity on selfrefraction of an optical beam. We have also seen that the presence of a quadratic nonlinearity can also contribute to change in the profile of a Gaussian beam in a crystal. In this chapter we will see how the effect of nonlinearity, alongwith the proper feedback, can give rise to optical bistability and hysteresis. This is not unexpected as hysteresis and bistability are also observed in nonlinear electronic circuits with feedback, such as in the Schmitt trigger, as well as in hybrid optical devices, such as an acoustooptic device with feedback (Banerjee and Poon, 1991). In what follows, we will examine two different types of optically bistable devices based on optical nonlinearities. The first is a nonlinear ring resonator comprising a two-level gain medium as the nonlinear element. We will treat both absorptive and dispersive bistability. Absorptive bistability is the case when the incident optical frequency is close to or equal to the transition frequency of the atoms from one level to another. In this case, the absorption coefficient becomes a nonlinear function of the incident intensity. On the other hand, if the frequencies are far apart, the medium behaves like a Kerr-type material and the system exhibits what is called dispersive bistability. In this case the material can be modeled by an effective n2 or v (3), meaning that the refractive index becomes a nonlinear function of the optical intensity. The second configurationwewill examine is a linear-nonlinear interface. In this case, the interface provides the feedback due to refractive index mismatch. In fact, the reflection coefficient (as well as the transmission coefficient) is modified due to the nonlinearity, which, as we shall see later, is responsible for demonstrating optical switching and bistability.
Abstract We discuss the origin and characteristics of the very large intensity-dependent changes in the refractive index of the semiconductor cadmium mercury telluride at 10.6 m. With continuous wave (c.w.) radiation and sample temperatures of 77 K nonlinear Fabry-Perot effects can be observed at powers as low as 1 mW. The Auger dominated recombination process and the thermal contributions to the refractive index make observations of optical bistability difficult with c.w. radiation. However, the use of a pulsed CO2 laser and two-photon absorption of the radiation does lead to the observation of bistability at room temperature. We compare these results with the reported work on InSb.