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Conference on Lasers and Electro-Optics

Recent advances in optical testability

Nasser N. Peyghambarian

Published Jan 1, 1986• 0 citations
Publisher

Abstract

Optical bistability can be obtained in nonlinear materials either with Fabry-Perot mirrors or without external feedback. When a material is placed between partially reflecting mirrors, a nonlinear Fabry-Perot etalon is formed with the etalon providing an external feedback. Optical bistability and gating occur as a result of a shift in the Fabry-Perot peak when the light intensity is increased (or when a second laser beam is introduced into the cavity). Optical bistability with the external feedback mechanism has been observed in many semiconductors such as bulk GaAs, GaAs-AIGaAs multiple-quantum-well (MQW) structures, InSb, InAs, CdS, CdHgTe, GaSe, and CuCI.

DOI
10.1364/cleo.1986.mb1

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Optical bistability can be obtained in nonlinear materials either with Fabry-Perot mirrors or without external feedback. When a material is placed between partially reflecting mirrors, a nonlinear Fabry-Perot etalon is formed with the etalon providing an external feedback. Optical bistability and gating occur as a result of a shift in the Fabry-Perot peak when the light intensity is increased (or when a second laser beam is introduced into the cavity). Optical bistability with the external feedback mechanism has been observed in many semiconductors such as bulk GaAs, GaAs-AIGaAs multiple-quantum-well (MQW) structures, InSb, InAs, CdS, CdHgTe, GaSe, and CuCI.
Semiconductors exhibit large optical nonlinearities near the band edge because of resonance enhancement. Optical bistability occurs when the optical nonlinearities are coupled with feedback. In bulk GaAs and GaAs–AlGaAs multiple-quantum-well superlattices, the nonlinearity arising from the presence of the free-exciton resonance has produced room-temperature optical bistability with a few milliwatts of power. The formation of biexcitons in CuCl, the saturation of the bound exciton on CdS, and band-filling effects in InSb, InAs, and HgCdTe lead to observation of bistability in these materials. A bistable etalon can be operated in an optical-gate mode to generate optical analogs of electronic gates such as and, or, and nor. It has been demonstrated that a GaAs optical NOR gate responds in ∼1 psec, using only ≲3 pJ of energy. However, because of the carrier lifetime of a few nanoseconds, the repetition rate of the NOR gate is now limited to a few hundred megahertz.
Epitaxial methods allow the fabrication of nonlinear interferomethc structures which include the mirrors and the GaAs Multiple Quantum Wells (MQW) nonlinear medium in a single crystal. This results in very compact nonlinear microcavities with typically 5im overall thickness. Optical bistability is observed in these structures at mW optical power. We review our latest experimental results on these structures including the observation of high contrast switching in the reflection mode the direct measurement of dispersive optical nonlinearities in MQWs evidencing their saturation behavior at high intensities. Finally we report external-beam switching experiments which allow to assess the potential of these structures as all-optical gates.
This article describes the application of one type of optical bistable device based on gallium arsenide as the nonlinear medium. The authors discuss several possible operations with GaAs nonlinear Fabry-Perot etalons. This article utilizes a recently developed computer model to illustrate the basic operating principles and applications. The authors mainly concentrate on the device operation itself. In keeping with common practice they use the term optical bistable device when referring to a device that can exhibit optical bistability even when not being used in such a manner. Instead of the expression nonlinear Fabry-Perot etalon, they often use nonlinear etalons or etalon devices.
A theoretical demonstration of optical bistability in periodic layered media, particularly in long-period GaAs/AlAs superlattices is presented. The proposed structure consists of a periodic multilayer system, as opposed to previously demonstrated nonlinear bistable devices which employed Fabry-Perot etalons. The optical resonance effect which is essential for bistable devices is, in this case, induced by a refractive index modulation. The nonlinear active medium is distributed in the whole structure rather than placed between the two mirrors of a Fabry-Perot cavity. It is shown by a complete calculation of wave propagation in the periodic nonlinear medium that a multiple valued feature appears in the structure's nonlinear reflectivity spectrum. The input/output characteristics of the structure exhibit bistable hysteresis similar to that of a nonlinear Fabry-Perot etalon.>