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Reports on Progress in Physics

Optical bistability and related devices

E. Abraham, Stanley Desmond Smith

Published Aug 1, 1982• 304 citations
Publisher

Abstract

Gives a broad description of optical bistability: from practical applications, as an optical transistor or optical memory element, to its phase transition interpretation. The theory is divided into three parts. The first is a simple discussion that covers most of the basic experimental effects and concepts of practical importance. The second part applies to atomic system where a semiclassical as well as a quantum-mechanical approach is possible. The third one discusses the mechanisms compatible with large nonlinearities observed in InSb and GaAs as semiconductors constitute the most promising materials for applications. Current experimental progress in all-optical and hybrid devices is also discussed and scaling example is presented to indicate the possibilities in high-speed all-optical signal processing.

DOI
10.1088/0034-4885/45/8/001

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•Jan 1, 1985•0 citations
Gives a broad description of optical bistability: from practical applications, as an optical transistor or optical memory element, to its phase transition interpretation. The theory is divided into three parts. The first is a simple discussion that covers most of the basic experimental effects and concepts of practical importance. The second part applies to atomic system where a semiclassical as well as a quantum-mechanical approach is possible. The third one discusses the mechanisms compatible with large nonlinearities observed in InSb and GaAs as semiconductors constitute the most promising materials for applications. Current experimental progress in all-optical and hybrid devices is also discussed and scaling example is presented to indicate the possibilities in high-speed all-optical signal processing.
In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.
The nonlinear phenomenon known as optical bistability, which enables optical systems to maintain two stable output states for a single input, is thoroughly examined in this review article. Through a detailed analysis of two important devices—the Simple Fiber Ring (SFR) resonator and the Nonlinear Optical Loop Mirror (NOLM)—it investigates the basic concepts of optical bistability, namely nonlinearity and feedback. Numerical simulations demonstrating dynamic dynamics and stability conditions bolster a strong theoretical framework. Recent advancements in bistable optical technologies, including developments in epsilon-near-zero materials, silicon photonics, hybrid plasmonic structures, neuromorphic photonics, and AI-driven photonic processors are also discussed. Furthermore, this review highlights emerging applications of optical bistability in optical logic circuits, high-speed communication, and quantum information processing. This review work is a useful tool for researchers and engineers creating next-generation optical systems because it connects theoretical insights with cutting-edge technological developments.
Optical signal processing using all-optical circuitry is an increasingly attractive goal with the recent progress in long- lived light sources, high quantum efficiency detectors, and low- loss high-bandwidth optical fibers. Devices which permit one light beam to control another or which provide an optical memory afford a capability essential to the success of all-optical logic systems. Much progress has been made toward practical bistable1 devices since the first observation2 of optical bistability in sodium vapor. (By optical bistability we refer to devices containing no inverted medium, so that bistable lasers3 are explicitly excluded.) The most practical device so far, a semiconductor etalon consisting of 4 μm of GaAs between 0.2 μm of Al0.42Ga0.53As with R = 0.9 coatings, is described herein.
Detailed results are presented on optical bistability (OB) and two-beam optical transistor (transphasor) action in simple, one-element Fabry-Perot devices, with the semiconductor InSb using a CW CO laser near the bandgap region, and OB for semiconductors in general is discussed. OB and multistability are seen in transmission and reflection at 5 K. At 77 K,n_{2} \simeq 3 \times 10^{-3}cm2/W [corresponding to an effective\chi^{(3)} \sim 1ESU] is measured and OB is observed at ∼8 mW. Transphasor action at 5 K is presented and the influence of degenerate four-wave mixing is discussed. The basic physics of the microscopic mechanism for n2(bandgap-resonant saturation) is summarized and a simplified, generalized model is derived. This model and arguments on cavity optimization are used to predict order of magnitude limits to switching power, energy, and speed, both in InSb and other semiconductors, even in the absence of excitonic enhancement.
We are reporting the first observation of optical bistability in InGaAsP. The motivation for much of the present research in all-optical signal processing is that optical devices can perform a large number of independent operations simultaneously, rather than sequentially. In cases in which sequential operations would constitute a bottleneck in all-electronic systems, a great deal of time may be saved by using optical devices as part of a larger hybrid system. In order to facilitate interfacing of optical and electronic components wavelength standardization at 1.3 microns is desirable for compatibility with existing semiconductor laser sources and fibers.