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Observation of Optical Bistability in InGaAsP

Wayne F. Sharfin, M. Dagenais

Published Jan 1, 1985• 0 citations
Publisher

Abstract

We are reporting the first observation of optical bistability in InGaAsP. The motivation for much of the present research in all-optical signal processing is that optical devices can perform a large number of independent operations simultaneously, rather than sequentially. In cases in which sequential operations would constitute a bottleneck in all-electronic systems, a great deal of time may be saved by using optical devices as part of a larger hybrid system. In order to facilitate interfacing of optical and electronic components wavelength standardization at 1.3 microns is desirable for compatibility with existing semiconductor laser sources and fibers.

DOI
10.1364/optcomp.1985.mc5

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We are reporting the first observation of optical bistability in InGaAsP. The motivation for much of the present research in all-optical signal processing is that optical devices can perform a large number of independent operations simultaneously, rather than sequentially. In cases in which sequential operations would constitute a bottleneck in all-electronic systems, a great deal of time may be saved by using optical devices as part of a larger hybrid system. In order to facilitate interfacing of optical and electronic components wavelength standardization at 1.3 microns is desirable for compatibility with existing semiconductor laser sources and fibers.
Gives a broad description of optical bistability: from practical applications, as an optical transistor or optical memory element, to its phase transition interpretation. The theory is divided into three parts. The first is a simple discussion that covers most of the basic experimental effects and concepts of practical importance. The second part applies to atomic system where a semiclassical as well as a quantum-mechanical approach is possible. The third one discusses the mechanisms compatible with large nonlinearities observed in InSb and GaAs as semiconductors constitute the most promising materials for applications. Current experimental progress in all-optical and hybrid devices is also discussed and scaling example is presented to indicate the possibilities in high-speed all-optical signal processing.
Optical signal processing using all-optical circuitry is an increasingly attractive goal with the recent progress in long- lived light sources, high quantum efficiency detectors, and low- loss high-bandwidth optical fibers. Devices which permit one light beam to control another or which provide an optical memory afford a capability essential to the success of all-optical logic systems. Much progress has been made toward practical bistable1 devices since the first observation2 of optical bistability in sodium vapor. (By optical bistability we refer to devices containing no inverted medium, so that bistable lasers3 are explicitly excluded.) The most practical device so far, a semiconductor etalon consisting of 4 μm of GaAs between 0.2 μm of Al0.42Ga0.53As with R = 0.9 coatings, is described herein.
It has recently become clear that OB in semiconductor laser amplifiers has many potential advantages for applications in optical logic and signal processing. Foremost among these advantages may be listed (i) ready availability (compared with other bistable devices [1]), (ii) wavelength compatibility with optical communications systems, (iii) inherent optical gain (for serial processing), and (iv) a combination of microwatt switching powers and nanosecond switching times leading to femtoule optical switching energies [2,3]. In support of item (ii) on this list, it is worth noting that amplifier OB has been reported at 0.8 μm [4], 1.3 μm [5], and 1.5 μm [6], all of which are wavelengths employed for optical communications systems.