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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Optical Bistable Devices: The Basic Components Of All-Optical Systems?

H. M. Gibbs, S. L. McCall, Thirumalai Venkatesan

Published Jul 29, 1981• 3 citations
Publisher

Abstract

Intrinsic optical bistability experiments are reviewed and their contributions summarized. Very large nonlinearities in semiconductors give reason to hope that practical devices may evolve in the near future. Characteristics important for practical optical logic devices are discussed: size, temperature range, holding intensity, switching energy, switching times, and wavelength range and stability.

DOI
10.1117/12.959956

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Intrinsic optical bistability experiments are reviewed and their contributions summarized. Very large nonlinearities in semiconductors give reason to hope that practical devices may evolve in the near future. Characteristics important for practical optical logic devices are discussed: size, temperature range, holding intensity, switching energy, switching times, and wavelength range and stability.
Gives a broad description of optical bistability: from practical applications, as an optical transistor or optical memory element, to its phase transition interpretation. The theory is divided into three parts. The first is a simple discussion that covers most of the basic experimental effects and concepts of practical importance. The second part applies to atomic system where a semiclassical as well as a quantum-mechanical approach is possible. The third one discusses the mechanisms compatible with large nonlinearities observed in InSb and GaAs as semiconductors constitute the most promising materials for applications. Current experimental progress in all-optical and hybrid devices is also discussed and scaling example is presented to indicate the possibilities in high-speed all-optical signal processing.
In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.
The nonlinear phenomenon known as optical bistability, which enables optical systems to maintain two stable output states for a single input, is thoroughly examined in this review article. Through a detailed analysis of two important devices—the Simple Fiber Ring (SFR) resonator and the Nonlinear Optical Loop Mirror (NOLM)—it investigates the basic concepts of optical bistability, namely nonlinearity and feedback. Numerical simulations demonstrating dynamic dynamics and stability conditions bolster a strong theoretical framework. Recent advancements in bistable optical technologies, including developments in epsilon-near-zero materials, silicon photonics, hybrid plasmonic structures, neuromorphic photonics, and AI-driven photonic processors are also discussed. Furthermore, this review highlights emerging applications of optical bistability in optical logic circuits, high-speed communication, and quantum information processing. This review work is a useful tool for researchers and engineers creating next-generation optical systems because it connects theoretical insights with cutting-edge technological developments.
We describe two approaches to low-energy switching and optical bistability. In one approach, which is a more fundamental approach, we use the nonlinearity associated with bound excitons in CdS to demonstrate the lowest total switching energy (4 pJ) of any optical device exhibiting two stable output states for the same input intensity.1 Bound excitons were chosen because they are known to have a very large oscillator strength (f = 7), a fast radiative decay (tspont = 500 ps), and they do not diffuse in the crystal, thus permitting a sharp focusing geometry. Furthermore, they are a good approximation to quantum dots. In a different experiment we have operated a standard diode laser structure below threshold and have demonstrated an efficient optical switch that can be used in thresholding and decision-making applications. The device switches with <400 aJ (4 × 10−16 J or <3000 photons) of optical energy incident on the device.2 During the switching operation, only 10 pJ of electrical power is dissipated. The switch operates at room temperature, is compatible with optical communication systems, and has a gain of the order of 15 dB, leading to the important properties of cascadability and large fan-out. The operation of a high contrast (5:1) AND gate was demonstrated.