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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Diode laser based optical logic devices

M. Dagenais

Published Jan 16, 1990• 2 citations
Publisher

Abstract

Dispersive optical bistability is reviewed with particular emphasis on trans- mission characteristics, time dependence, cascadability and fan-out capability of bistable diode laser amplifiers. Bistability in inhomogeneously excited diode lasers, gain quenching and polarization bistability are also discussed. Different applica- tions of bistable lasers are then reviewed, including all-optical regeneration, time- division switching, colored optical interconnects, optical crossbar switches and optical look-up tables.

DOI
10.1117/12.2283572

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In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.