Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Le Journal de Physique Colloques

OPTICAL BISTABILITY IN ACTIVE DEVICES

Hitoshi Kawaguchi

Published Jun 1, 1988• 2 citations
Publisher

Abstract

Recent progress in the study of both absorptive and dispersive bistability in semiconductor lasers is reviewed. Inhomogeneously excited semiconductor lasers as an absorptive case and resonant type laser diode amplifiers as a dispersive case, are described.
DOI
10.1051/jphyscol:1988214

Related papers

OPTICAL BISTABILITY IN SEMICONDUCTOR LASER AMPLIFIERS

M.J. Adams

The basic physical mechanism of OB in semiconductor laser amplifiers is discussed and a review given of the current state-of-the-art in theoretical and experimental studies.

Le Journal de Physique Colloques•Jun 1, 1988•5 citations

Diode laser based optical logic devices

M. Dagenais

Dispersive optical bistability is reviewed with particular emphasis on trans- mission characteristics, time dependence, cascadability and fan-out capability of bistable diode laser amplifiers. Bistability in inhomogeneously excited diode lasers, gain quenching and polarization bistability are also discussed. Different applica- tions of bistable lasers are then reviewed, including all-optical regeneration, time- division switching, colored optical interconnects, optical crossbar switches and optical look-up tables.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jan 16, 1990•2 citations

STRONG LIGHT-SEMICONDUCTOR INTERACTIONS IN CdS AND GaSe, AND OPTICAL BISTABILITY

В. С. Днепровский, A. I. Furtichev, Victor I. Klimov +4 more

Changes in absorption and refractive index caused by absorption of a laser beam in CdS and GaSe semiconductors were investigated and used to excite absorptive resonatorless bistability in CdS and dispersive bistability in a GaSe Fabry-Perot cavity.

Le Journal de Physique Colloques•Jun 1, 1988•0 citations

Optical bistability in diode-laser amplifiers and injection-locked laser diodes

Rongqing Hui, Sergio Benedetto, Ivo Montrosset

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold have been investigated theoretically. The OB result is found to be varied continuously from below to above threshold with its maximum value located just above threshold; this result has been verified experimentally. A much faster switch-off of OB can be expected when the laser operates in the injection-locked condition.

Optics Letters•Feb 15, 1993•18 citations

Static and dynamical properties of dispersive optical bistability in semiconductor lasers

Rongqing Hui

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>

Journal of Lightwave Technology•Jan 1, 1995•21 citations

Invited paper A tentative assessment of semiconductor laser optical bistability

Matthew Adams

A review is given of reported results for optical bistability in semiconductors, with especial reference to that occurring in laser structures. Estimates are made of likely improvements that may occur in power-speed trade-offs for these devices. It is concluded that laser amplifier bistability offers comparable or, in some cases, better total energy budgets than for other forms and has the useful attribute of optical gain. However, extreme wavelength sensitivity and difficulty in forming large two-dimensional arrays using today's technology mitigate against use of the amplifier for large-scale optical logic. These two factors may be avoided by the use of self-electro-optic effect devices (SEEDs), which are less wavelength-sensitive, and by multiple-quantum-well dispersive etalons in the case of requirements for large amounts of parallel processing.

International Journal of Electronics•Jan 1, 1986•20 citations
Dispersive optical bistability is reviewed with particular emphasis on trans- mission characteristics, time dependence, cascadability and fan-out capability of bistable diode laser amplifiers. Bistability in inhomogeneously excited diode lasers, gain quenching and polarization bistability are also discussed. Different applica- tions of bistable lasers are then reviewed, including all-optical regeneration, time- division switching, colored optical interconnects, optical crossbar switches and optical look-up tables.
Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>
A review is given of reported results for optical bistability in semiconductors, with especial reference to that occurring in laser structures. Estimates are made of likely improvements that may occur in power-speed trade-offs for these devices. It is concluded that laser amplifier bistability offers comparable or, in some cases, better total energy budgets than for other forms and has the useful attribute of optical gain. However, extreme wavelength sensitivity and difficulty in forming large two-dimensional arrays using today's technology mitigate against use of the amplifier for large-scale optical logic. These two factors may be avoided by the use of self-electro-optic effect devices (SEEDs), which are less wavelength-sensitive, and by multiple-quantum-well dispersive etalons in the case of requirements for large amounts of parallel processing.