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Theory and optimisation of optical bistability in multilayer interference filters

David C. Hutchings, Brian S. Wherrett, C. Wang

Published Nov 17, 1988• 0 citations
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Abstract

Refractive changes in semiconductors used in optical bistability are induced as a result of excitations generated by intense light levels. To date such excitations have been either electronic (carriers excited to higher energy states) as in InSb or thermal as in ZnSe. Usually such refractive index changes are small and it is necessary to introduce some form of optical feedback in order to obtain a useful change in the output signal. Various configurations which provide optical feedback are examined and the optimisation for low switching power levels is addressed.

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Theory and optimization of optical bistability in multilayer interference filters

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Applied Physics Letters•Nov 1, 1979•310 citations
Refractive changes in semiconductors used in optical bistability are induced as a result of excitations generated by intense light levels. To date such excitations have been either electronic (carriers excited to higher energy states) as in InSb or thermal as in ZnSe. Usually such refractive index changes are small and it is necessary to introduce some form of optical feedback in order to obtain a useful change in the output signal. Various configurations which provide optical feedback are examined and the optimisation for low switching power levels is addressed.
The switching dynamics of thermally induced optical bistability in ZnSe nonlinear interference filters is investigated experimentally and theoretically. The device, maintained on its low transmission level by a cw argon laser beam, is switched on its high transmission level by an external light pulse. Either a very fast switching or an important slowing down are obtained when the holding cw intensity or the switching pulse energy are well chosen. This variation of the switching times is analyzed theoretically and observed experimentally.
In the last chapter, we examined the effect of cubic nonlinearity on selfrefraction of an optical beam. We have also seen that the presence of a quadratic nonlinearity can also contribute to change in the profile of a Gaussian beam in a crystal. In this chapter we will see how the effect of nonlinearity, alongwith the proper feedback, can give rise to optical bistability and hysteresis. This is not unexpected as hysteresis and bistability are also observed in nonlinear electronic circuits with feedback, such as in the Schmitt trigger, as well as in hybrid optical devices, such as an acoustooptic device with feedback (Banerjee and Poon, 1991). In what follows, we will examine two different types of optically bistable devices based on optical nonlinearities. The first is a nonlinear ring resonator comprising a two-level gain medium as the nonlinear element. We will treat both absorptive and dispersive bistability. Absorptive bistability is the case when the incident optical frequency is close to or equal to the transition frequency of the atoms from one level to another. In this case, the absorption coefficient becomes a nonlinear function of the incident intensity. On the other hand, if the frequencies are far apart, the medium behaves like a Kerr-type material and the system exhibits what is called dispersive bistability. In this case the material can be modeled by an effective n2 or v (3), meaning that the refractive index becomes a nonlinear function of the optical intensity. The second configurationwewill examine is a linear-nonlinear interface. In this case, the interface provides the feedback due to refractive index mismatch. In fact, the reflection coefficient (as well as the transmission coefficient) is modified due to the nonlinearity, which, as we shall see later, is responsible for demonstrating optical switching and bistability.
We report the observation of optical stability for a plane parallel semiconductor crystal which forms a Fabry-Perot interferometer using only the natural reflectivity of its surfaces. Nonlinear transmission is observed for cw laser intensities above ∼ 100 W/cm2 for radiation at 1895 cm−1 near the energy gap of InSb at 5 K. The effect is interpreted in terms of a very large intensity-dependent refractive index giving a 5λ/2 optical thickness change for an intensity of ∼2 kW/cm2. Clear bistability is seen in fifth-order interference, the first such observation above first order in an intrinsic, one-element system, in addition to regions exhibiting signal amplification. The same crystal also shows strong modulation of the transmission of one laser beam induced by a second, with real signal gain, thus demonstrating an ’’optical transistor.’’