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Applied Physics Letters

Wide-band suppression of photon-number fluctuations in a high-speed light-emitting diode driven by a constant-current source

Masahide Kobayashi, M. Kohno, Yutaka Kadoya, M. Yamanishi, J. Abe, Takuya Hirano

Published Jan 19, 1998• 19 citations
Publisher

Abstract

We demonstrate experimental results on the generation of sub-Poissonian photon fluxes emanating from an AlGaAs light-emitting diode, which manifest a wide-band (0–100 MHz) noise suppression below the standard quantum limit level despite low current density (∼38 A/cm2) operation at room temperature. The experimental noise power spectrum is well fitted in terms of the theoretical curve estimated with the quantum mechanical Langevin equations.

DOI
10.1063/1.120713

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Summary form only given. Among a variety of schemes for nonclassical light generation, the generation of sub-Poissonian photon-states with semiconductor lasers or light-emitting-diodes (LEDs) has been attracting much attention, primarily from engineering point of view. In this talk, we shall present our experimental results, manifesting substantial noise suppression of output photon fluxes below standard quantum limit (SQL) level from a single LED surprisingly without recourse to high-impedance circuit at room temperature. The observed squeezing is interpreted semiquantitatively in terms of our new model including effects of microscopic backward pump process.
The generation of photon-number squeezed states or sub-Poissonian light using semiconductor devices is especially attractive because of its simple experimental configuration, small energy consumption, and the possibility of large amplitude noise reduction by using high quantum efficiency devices. Recently, 3 dB squeezing at liquid nitrogen temperature and 80 MHz (3 dB roll-off bandwidth) squeezing at room temperature were reported by using a light-emitting diode. In this paper, we demonstrate over 200 MHz squeezing at 48 K.
We investigated the generation of sub-Poissonian light in light-emitting diodes (LEDs) in which the active region is heavily doped with Be. The squeezing of the intensity-fluctuation below the full-shot-noise level was observed in a wide frequency range, near-dc to 1.5 GHz. From the noise-suppression spectra, we evaluated the radiative recombination lifetime of electrons in the active region and confirmed that the lifetime is reduced with increasing doping density. The results demonstrate clearly the excellent noise properties as well as the capability of high-speed modulation of the LEDs.