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Conference on Lasers and Electro-Optics

Wideband and deep penetration of photon-number fluctuations into quantum regime in series-connected light-emitting diodes

Hiroyuki Sumitomo, Yutaka Kadoya, M. Yamanishi

Published Nov 27, 2002• 0 citations
Publisher

Abstract

Summary form only given. We present our experimental results on wideband (-60 MHz) noise suppression of output photon fluxes below the standard quantum limit (SQL) level from series-connected LEDs at room temperature. Particularly, the degree of the noise suppression in series-connected LEDs is demonstrated to be substantially larger than that in a single LED driven through an equivalent series resistor. Series-connected AlGaAs LEDs (HE8812SG) were driven directly by a constant voltage source.

DOI
10.1109/iqec.1998.680345

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Summary form only given. We present our experimental results on wideband (-60 MHz) noise suppression of output photon fluxes below the standard quantum limit (SQL) level from series-connected LEDs at room temperature. Particularly, the degree of the noise suppression in series-connected LEDs is demonstrated to be substantially larger than that in a single LED driven through an equivalent series resistor. Series-connected AlGaAs LEDs (HE8812SG) were driven directly by a constant voltage source.
Summary form only given. Among a variety of schemes for nonclassical light generation, the generation of sub-Poissonian photon-states with semiconductor lasers or light-emitting-diodes (LEDs) has been attracting much attention, primarily from engineering point of view. In this talk, we shall present our experimental results, manifesting substantial noise suppression of output photon fluxes below standard quantum limit (SQL) level from a single LED surprisingly without recourse to high-impedance circuit at room temperature. The observed squeezing is interpreted semiquantitatively in terms of our new model including effects of microscopic backward pump process.
We present the experimental results on the squeezing of photon-number fluctuations in tailor-made light-emitting diodes (LED’s). In the LED, a highly p-doped separate confinement heterostructure is adopted as the active region to shorten the radiative recombination lifetime. In addition, a photodiode is monolithically integrated with the LED to enhance the photon-collection efficiency, which allows strong squeezing. The squeezing below the standard quantum-limit level over a wide frequency range, near-dc to 300 MHz, at room temperature and the maximum squeezing depths, 0.86 dB at room temperature and 2.6 dB at low temperature, are demonstrated.
Summary form only given. Generally, light-emitting diodes (LEDs) are considered to be low-performance devices in comparison with laser diodes (LDs). However, for future applications such as the parallel inter- or intra-integrated-circuit chip optical-connections, where very low power-consumption is required for the light emitters, a LED can be a very attractive device because of the threshold-free input-output characteristics. So far, continuous efforts have been made to improve the performance of LEDs. In this paper, we focus on another very important aspect, i.e. the noise characteristics. In comparison with LDs, in general, LEDs exhibit excellent noise characteristics, particularly at low injection levels. We show that the intensity fluctuation of the output light from an LED can be squeezed below the full shot-noise (FSN) level in a wide frequency range up to 800 MHz at room temperature. Such a squeezing bandwidth, three orders of magnitude wider than that in the first report on shot-noise suppression in a LED and rather close to the widest bandwidth (1.1 GHz) obtained with LDs at 77 K has been believed to be impossible. In addition, use of a separate confinement hetero(SCH-) structure in the active region allowed us to use a moderate doping concentration (5 /spl times/ 10/sup 18/ cm/sup -3/), resulting in a sufficiently high internal quantum efficiency, /spl sim/30%.
We report photon-number squeezing measurements on high-efficiency double heterojunction AlGaAs infrared light-emitting diodes. The overall current-to-current efficiency was 0.25 at room temperature and 0.40 at 77 K, resulting in a noise reduction below the Standard Quantum Limit of 1.1 dB and 2.0dB, respectively. In addition, photocurrent correlation experiments were carried out with 2 or 3 LEDs in series, revealing a normalized correlation coefficient of 0.25 at room temperature and 0.40 at 77 K.