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Quantum Electronics and Laser Science Conference

Squeezing in photon-number fluctuations due to backward pump process without high impedance-noise-suppression in a light-emitting-diode

Hiroyuki Sumitomo, Yutaka Kadoya, M. Yamanishi, J. Abe

Published Jan 20, 2003• 1 citation
Publisher

Abstract

Summary form only given. Among a variety of schemes for nonclassical light generation, the generation of sub-Poissonian photon-states with semiconductor lasers or light-emitting-diodes (LEDs) has been attracting much attention, primarily from engineering point of view. In this talk, we shall present our experimental results, manifesting substantial noise suppression of output photon fluxes below standard quantum limit (SQL) level from a single LED surprisingly without recourse to high-impedance circuit at room temperature. The observed squeezing is interpreted semiquantitatively in terms of our new model including effects of microscopic backward pump process.

DOI
10.1109/qels.1999.807442

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Summary form only given. Among a variety of schemes for nonclassical light generation, the generation of sub-Poissonian photon-states with semiconductor lasers or light-emitting-diodes (LEDs) has been attracting much attention, primarily from engineering point of view. In this talk, we shall present our experimental results, manifesting substantial noise suppression of output photon fluxes below standard quantum limit (SQL) level from a single LED surprisingly without recourse to high-impedance circuit at room temperature. The observed squeezing is interpreted semiquantitatively in terms of our new model including effects of microscopic backward pump process.
We investigated extensively the sub-Poissonian-photon-state generation by the microscopic backward-pump (BP) process in a semiconductor heterojunction light-emitting diode (LED) under constant-voltage operation. In particular, the BP rate relative to the forward pump rate has been carefully evaluated from the dc characteristics of the LED and shown to depend strongly on the injection current and the device temperature. We then compare the experimental results of the photon-number squeezing performed at various temperatures in the constant-voltage-drive setup with the theoretical prediction estimated numerically using the parameter values determined from the dc measurements. As a consequence, it was proven that the observed squeezing at room temperature is successfully interpreted only in terms of the nonlinear BP model, while that at low temperature $(\ensuremath{\sim}100 \mathrm{K})$ is explained simply by the conventional model based on macroscopic Coulomb-blockade effect for the pump-noise suppression.
Generation of nonclassical lights, such as photon-number squeezed states and quadrature-phase squeezed state, is required to realize optical communications and accurate measurements at sub-shot-noise levels. Among a variety of schemes, the direct generation of sub-Poissonian photon fluxes from semiconductor light emitters has been attracting much attention because of the simplicity of experimental arrangement, the low energy consumption, the possibility of a large degree of noise suppression, and the compatibility with modern communication system. In this presentation, we demonstrate the experimental results of generation of sub-Poissonian photon fluxes in an integrated light-emitter/detector system. It is shown that the pump-noise-suppression owing to the macroscopic Coulomb blockade effect can work well even when a superlattice alloylike material is used.
Experimental results on squeezing of photon-number fluctuations of a p-n junction light-emitting diode (LED) driven by a constant-voltage source are demonstrated together with physical mechanisms responsible for the squeezing. The observed squeezing at room temperature is discovered to be explained not by the conventional collective Coulomb blockade model but by our new model which includes the effect of the microscopic nonlinear backward-pump process, which can work even in the constant-voltage operation.
Summary form only given. Generally, light-emitting diodes (LEDs) are considered to be low-performance devices in comparison with laser diodes (LDs). However, for future applications such as the parallel inter- or intra-integrated-circuit chip optical-connections, where very low power-consumption is required for the light emitters, a LED can be a very attractive device because of the threshold-free input-output characteristics. So far, continuous efforts have been made to improve the performance of LEDs. In this paper, we focus on another very important aspect, i.e. the noise characteristics. In comparison with LDs, in general, LEDs exhibit excellent noise characteristics, particularly at low injection levels. We show that the intensity fluctuation of the output light from an LED can be squeezed below the full shot-noise (FSN) level in a wide frequency range up to 800 MHz at room temperature. Such a squeezing bandwidth, three orders of magnitude wider than that in the first report on shot-noise suppression in a LED and rather close to the widest bandwidth (1.1 GHz) obtained with LDs at 77 K has been believed to be impossible. In addition, use of a separate confinement hetero(SCH-) structure in the active region allowed us to use a moderate doping concentration (5 /spl times/ 10/sup 18/ cm/sup -3/), resulting in a sufficiently high internal quantum efficiency, /spl sim/30%.