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Chinese Physics Letters

Generation of Sub-Poissonian Light in an Open-Loop LED System by the Quantum Correlation

Jianping Yin, Yuzhu Wang

Published Dec 1, 1993• 2 citations
Publisher

Abstract

This paper describes the generation and observation of sub-Poissonian light in an open-loop system with low quantum efficiency at room temperature. The experimental results show that the photocurrent fluctuation spectrum density can be reduced below the shot noise limit by 72% (-5.5 dB) in an open-loop light-emitting diode (LED) system at the frequency of 2 MHz. The noise reduction is not limited by quantum efficiency of the LED, or the current transfer efficiency.

DOI
10.1088/0256-307x/10/12/006

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Applied Physics Letters•Oct 24, 2002•4 citations
This paper describes the generation and observation of sub-Poissonian light in an open-loop system with low quantum efficiency at room temperature. The experimental results show that the photocurrent fluctuation spectrum density can be reduced below the shot noise limit by 72% (-5.5 dB) in an open-loop light-emitting diode (LED) system at the frequency of 2 MHz. The noise reduction is not limited by quantum efficiency of the LED, or the current transfer efficiency.
The squeezing of the intensity noise in the extremely weak light emanating from a light-emitting diode (LED) was investigated. By the use of a tailor-made high-efficiency LED, in which the active region is heavily doped (∼3.5×1019 cm-3), we successfully observed sub-Poissonian light at an injection current and photocurrent as low as 1 µA and 160 nA, respectively, at room temperature. The experimental results also implied that the theoretical model describing the noise behavior needs to be refined, particularly in the case of extremely low injection levels where the nonradiative recombination process has a serious effect.
Photocurrent shot-noise suppression is observed in closed optoelectronic loop below the limit (1 − η) of standard shot-noise level (SNL) imposed by conventional theory of photodetector with quantum efficiency η. Experimental results on photocurrent noise are presented for different values of feedback strength and quantum efficiency η of in-loop photodiode. It is shown that at fixed feedback strength the suppression factor does not depend on η. Minimum noise spectral density is observed below the SNL by a factor 17·8 (− 12·5 dB). Such large suppression cannot be explained in terms of an ordinary sub-Poissonian light state in the loop. We suggest the concept of an anticorrelation light state, where the light in the loop is described as a non-stationary state with Poissonian quantum fluctuations, and superimposed anticorrelated classical fluctuations. While the degree of noise reduction in the photocurrent can be arbitrary large, the degree of anticorrelation between the classical and quantum fluctuations in the light beam remains limited by the quantum efficiency of the feedback photodiode. Calculations based on this concept are in a good agreement with experimental data on super-shot-noise power, obtained for the beam extracted from the loop by a beam splitter.
We drive a high-efficiency gallium arsenide light emitting diode (LED) with a low-noise current and measure the noise in the detected photocurrent from a high-quantum-efficiency silicon photodiode collecting most of the emitted light. The drive current is obtained from a resistor in series with a low-noise voltage supply. The Johnson noise in the current is much less than shot noise whenever the voltage across the resistor is large compared with 50 mV (2kT/e at room temperature). The LED converts electrons to photons directly with some efficiency η.
Summary form only given. Generally, light-emitting diodes (LEDs) are considered to be low-performance devices in comparison with laser diodes (LDs). However, for future applications such as the parallel inter- or intra-integrated-circuit chip optical-connections, where very low power-consumption is required for the light emitters, a LED can be a very attractive device because of the threshold-free input-output characteristics. So far, continuous efforts have been made to improve the performance of LEDs. In this paper, we focus on another very important aspect, i.e. the noise characteristics. In comparison with LDs, in general, LEDs exhibit excellent noise characteristics, particularly at low injection levels. We show that the intensity fluctuation of the output light from an LED can be squeezed below the full shot-noise (FSN) level in a wide frequency range up to 800 MHz at room temperature. Such a squeezing bandwidth, three orders of magnitude wider than that in the first report on shot-noise suppression in a LED and rather close to the widest bandwidth (1.1 GHz) obtained with LDs at 77 K has been believed to be impossible. In addition, use of a separate confinement hetero(SCH-) structure in the active region allowed us to use a moderate doping concentration (5 /spl times/ 10/sup 18/ cm/sup -3/), resulting in a sufficiently high internal quantum efficiency, /spl sim/30%.
We investigated the generation of sub-Poissonian light in light-emitting diodes (LEDs) in which the active region is heavily doped with Be. The squeezing of the intensity-fluctuation below the full-shot-noise level was observed in a wide frequency range, near-dc to 1.5 GHz. From the noise-suppression spectra, we evaluated the radiative recombination lifetime of electrons in the active region and confirmed that the lifetime is reduced with increasing doping density. The results demonstrate clearly the excellent noise properties as well as the capability of high-speed modulation of the LEDs.