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Optics Express

Wideband squeezing in photon number fluctuations from a high-speed light-emitting diode

Jun'ichi Abe, Takahiro Kuga, Takuya Hirano, Masahide Kobayashi, Masamichi Yamanishi

Published Sep 11, 2000• 8 citations
Publisher

Abstract

Wideband, highly noise-suppressed squeezing was observed by using a high-speed, high-quantum-efficiency light-emitting diode. The squeezing bandwidth extended over 200 MHz. We also have investigated the dependence of the squeezing bandwidth on the pump-current at low temperature. The experimental result was compared with the theoretical predictions based on a unified model of the pump and recombination process and was well explained by the model at the thermionic emission limit.

DOI
10.1364/oe.7.000215

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Wideband, highly noise-suppressed squeezing was observed by using a high-speed, high-quantum-efficiency light-emitting diode. The squeezing bandwidth extended over 200 MHz. We also have investigated the dependence of the squeezing bandwidth on the pump-current at low temperature. The experimental result was compared with the theoretical predictions based on a unified model of the pump and recombination process and was well explained by the model at the thermionic emission limit.
The generation of photon-number squeezed states or sub-Poissonian light using semiconductor devices is especially attractive because of its simple experimental configuration, small energy consumption, and the possibility of large amplitude noise reduction by using high quantum efficiency devices. Recently, 3 dB squeezing at liquid nitrogen temperature and 80 MHz (3 dB roll-off bandwidth) squeezing at room temperature were reported by using a light-emitting diode. In this paper, we demonstrate over 200 MHz squeezing at 48 K.
We present the experimental results on the squeezing of photon-number fluctuations in tailor-made light-emitting diodes (LED’s). In the LED, a highly p-doped separate confinement heterostructure is adopted as the active region to shorten the radiative recombination lifetime. In addition, a photodiode is monolithically integrated with the LED to enhance the photon-collection efficiency, which allows strong squeezing. The squeezing below the standard quantum-limit level over a wide frequency range, near-dc to 300 MHz, at room temperature and the maximum squeezing depths, 0.86 dB at room temperature and 2.6 dB at low temperature, are demonstrated.
Physical mechanisms which limit the squeezing bandwidth in a heterojunction light-emitting diode (LED) have been extensively studied both theoretically and experimentally. It is proven that our experimental results of pump-current dependence of the squeezing bandwidth in the constant-current-driven heterojunction LED at room temperature cannot be explained by previous theoretical predictions. We present a theoretical framework, including the effects of a microscopic backward-pump (BP) process, generally applicable to a heterojunction LED. Parameters describing the relative significance of the BP process are determined by the measurements of current-versus-voltage characteristic and differential resistance of the LED, independent of the noise measurements. As a consequence, the experimental results can be explained by our model in a unified manner over a whole range of injection current, and it is clarified that the pump situation of the LED moves continuously from thermionic emission to diffusion limits with increasing pump current.
Summary form only given. Among a variety of schemes for nonclassical light generation, the generation of sub-Poissonian photon-states with semiconductor lasers or light-emitting-diodes (LEDs) has been attracting much attention, primarily from engineering point of view. In this talk, we shall present our experimental results, manifesting substantial noise suppression of output photon fluxes below standard quantum limit (SQL) level from a single LED surprisingly without recourse to high-impedance circuit at room temperature. The observed squeezing is interpreted semiquantitatively in terms of our new model including effects of microscopic backward pump process.
Experimental results on squeezing of photon-number fluctuations of a p-n junction light-emitting diode (LED) driven by a constant-voltage source are demonstrated together with physical mechanisms responsible for the squeezing. The observed squeezing at room temperature is discovered to be explained not by the conventional collective Coulomb blockade model but by our new model which includes the effect of the microscopic nonlinear backward-pump process, which can work even in the constant-voltage operation.