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Applied Physics Letters

Wideband sub-Poissonian light generation in light-emitting diodes incorporating a heavily-doped active region

K. Tanaka, A. Higashi, Hiroyuki Yuji, 竜二 増山, Yutaka Kadoya, M. Yamanishi

Published Oct 24, 2002• 4 citations
Publisher

Abstract

We investigated the generation of sub-Poissonian light in light-emitting diodes (LEDs) in which the active region is heavily doped with Be. The squeezing of the intensity-fluctuation below the full-shot-noise level was observed in a wide frequency range, near-dc to 1.5 GHz. From the noise-suppression spectra, we evaluated the radiative recombination lifetime of electrons in the active region and confirmed that the lifetime is reduced with increasing doping density. The results demonstrate clearly the excellent noise properties as well as the capability of high-speed modulation of the LEDs.

DOI
10.1063/1.1517725

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We investigated the generation of sub-Poissonian light in light-emitting diodes (LEDs) in which the active region is heavily doped with Be. The squeezing of the intensity-fluctuation below the full-shot-noise level was observed in a wide frequency range, near-dc to 1.5 GHz. From the noise-suppression spectra, we evaluated the radiative recombination lifetime of electrons in the active region and confirmed that the lifetime is reduced with increasing doping density. The results demonstrate clearly the excellent noise properties as well as the capability of high-speed modulation of the LEDs.
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The squeezing of the intensity noise in the extremely weak light emanating from a light-emitting diode (LED) was investigated. By the use of a tailor-made high-efficiency LED, in which the active region is heavily doped (∼3.5×1019 cm-3), we successfully observed sub-Poissonian light at an injection current and photocurrent as low as 1 µA and 160 nA, respectively, at room temperature. The experimental results also implied that the theoretical model describing the noise behavior needs to be refined, particularly in the case of extremely low injection levels where the nonradiative recombination process has a serious effect.
We have investigated the squeezing of intensity-fluctuation below the full-shot-noise level in light-emitting diodes (LEDs) at low-photon flux levels. By using a tailor-made LED, the squeezing over a wide frequency range, near-dc to 1.5 GHz was achieved at an injection-current level as low as 100 μA. As a result, the number of photons, which can be expected in the sub-Poissonian light, was reduced to the order of 105 per pulse, nearly three orders of magnitude smaller than those obtained in commercial LEDs.
We present the experimental results on the squeezing of photon-number fluctuations in tailor-made light-emitting diodes (LED’s). In the LED, a highly p-doped separate confinement heterostructure is adopted as the active region to shorten the radiative recombination lifetime. In addition, a photodiode is monolithically integrated with the LED to enhance the photon-collection efficiency, which allows strong squeezing. The squeezing below the standard quantum-limit level over a wide frequency range, near-dc to 300 MHz, at room temperature and the maximum squeezing depths, 0.86 dB at room temperature and 2.6 dB at low temperature, are demonstrated.