Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

Generation of broadband (-1 GHz) sub-Poissonian-lights in light-emitting diodes at low photon-flux levels

K. Tanaka, Yutaka Kadoya, 竜二 増山, Hiroyuki Yuji, M. Yamanishi

Published Nov 13, 2002• 0 citations
Publisher

Abstract

We present a broadband (near dc to 1 GHz) squeezing of intensity-fluctuation below the shot-noise-limited level in light-emitting diodes at low-photon flux level (photo current /spl sim/40 /spl mu/A).
DOI
10.1109/cleopr.2001.971014

Related papers

Broadband photon-number squeezing in light-emitting diodes at low photon-flux levels

竜二 増山, A. Higashi, K. Tanaka +2 more

We have investigated the squeezing of intensity-fluctuation below the full-shot-noise level in light-emitting diodes (LEDs) at low-photon flux levels. By using a tailor-made LED, the squeezing over a wide frequency range, near-dc to 1.5 GHz was achieved at an injection-current level as low as 100 μA. As a result, the number of photons, which can be expected in the sub-Poissonian light, was reduced to the order of 105 per pulse, nearly three orders of magnitude smaller than those obtained in commercial LEDs.

Applied Physics Letters•Aug 8, 2003•3 citations

Generation of broadband sub-Poissonian-light in light-emitting diodes

K. Tanaka, Yutaka Kadoya, Hiroyuki Yuji +2 more

Summary form only given. Generally, light-emitting diodes (LEDs) are considered to be low-performance devices in comparison with laser diodes (LDs). However, for future applications such as the parallel inter- or intra-integrated-circuit chip optical-connections, where very low power-consumption is required for the light emitters, a LED can be a very attractive device because of the threshold-free input-output characteristics. So far, continuous efforts have been made to improve the performance of LEDs. In this paper, we focus on another very important aspect, i.e. the noise characteristics. In comparison with LDs, in general, LEDs exhibit excellent noise characteristics, particularly at low injection levels. We show that the intensity fluctuation of the output light from an LED can be squeezed below the full shot-noise (FSN) level in a wide frequency range up to 800 MHz at room temperature. Such a squeezing bandwidth, three orders of magnitude wider than that in the first report on shot-noise suppression in a LED and rather close to the widest bandwidth (1.1 GHz) obtained with LDs at 77 K has been believed to be impossible. In addition, use of a separate confinement hetero(SCH-) structure in the active region allowed us to use a moderate doping concentration (5 /spl times/ 10/sup 18/ cm/sup -3/), resulting in a sufficiently high internal quantum efficiency, /spl sim/30%.

Conference on Lasers and Electro-Optics•Jan 1, 2001•0 citations

Wideband sub-Poissonian light generation in light-emitting diodes incorporating a heavily-doped active region

K. Tanaka, A. Higashi, Hiroyuki Yuji +3 more

We investigated the generation of sub-Poissonian light in light-emitting diodes (LEDs) in which the active region is heavily doped with Be. The squeezing of the intensity-fluctuation below the full-shot-noise level was observed in a wide frequency range, near-dc to 1.5 GHz. From the noise-suppression spectra, we evaluated the radiative recombination lifetime of electrons in the active region and confirmed that the lifetime is reduced with increasing doping density. The results demonstrate clearly the excellent noise properties as well as the capability of high-speed modulation of the LEDs.

Applied Physics Letters•Oct 24, 2002•4 citations

Generation of Extremely Weak Sub-Poissonian Light Using High-Efficiency Light-Emitting Diodes

Masanobu Nakano, Kenichi Tanaka, A. Higashi +3 more

The squeezing of the intensity noise in the extremely weak light emanating from a light-emitting diode (LED) was investigated. By the use of a tailor-made high-efficiency LED, in which the active region is heavily doped (∼3.5×1019 cm-3), we successfully observed sub-Poissonian light at an injection current and photocurrent as low as 1 µA and 160 nA, respectively, at room temperature. The experimental results also implied that the theoretical model describing the noise behavior needs to be refined, particularly in the case of extremely low injection levels where the nonradiative recombination process has a serious effect.

Japanese Journal of Applied Physics•Jul 30, 2004•0 citations

Wide-band suppression of photon-number fluctuations in a high-speed light-emitting diode driven by a constant-current source

Masahide Kobayashi, M. Kohno, Yutaka Kadoya +3 more

We demonstrate experimental results on the generation of sub-Poissonian photon fluxes emanating from an AlGaAs light-emitting diode, which manifest a wide-band (0–100 MHz) noise suppression below the standard quantum limit level despite low current density (∼38 A/cm2) operation at room temperature. The experimental noise power spectrum is well fitted in terms of the theoretical curve estimated with the quantum mechanical Langevin equations.

Applied Physics Letters•Jan 19, 1998•19 citations

Squeezing in photon-number fluctuations due to backward pump process without high impedance-noise-suppression in a light-emitting-diode

Hiroyuki Sumitomo, Yutaka Kadoya, M. Yamanishi +1 more

Summary form only given. Among a variety of schemes for nonclassical light generation, the generation of sub-Poissonian photon-states with semiconductor lasers or light-emitting-diodes (LEDs) has been attracting much attention, primarily from engineering point of view. In this talk, we shall present our experimental results, manifesting substantial noise suppression of output photon fluxes below standard quantum limit (SQL) level from a single LED surprisingly without recourse to high-impedance circuit at room temperature. The observed squeezing is interpreted semiquantitatively in terms of our new model including effects of microscopic backward pump process.

Quantum Electronics and Laser Science Conference•Jan 20, 2003•1 citation
We have investigated the squeezing of intensity-fluctuation below the full-shot-noise level in light-emitting diodes (LEDs) at low-photon flux levels. By using a tailor-made LED, the squeezing over a wide frequency range, near-dc to 1.5 GHz was achieved at an injection-current level as low as 100 μA. As a result, the number of photons, which can be expected in the sub-Poissonian light, was reduced to the order of 105 per pulse, nearly three orders of magnitude smaller than those obtained in commercial LEDs.
Summary form only given. Generally, light-emitting diodes (LEDs) are considered to be low-performance devices in comparison with laser diodes (LDs). However, for future applications such as the parallel inter- or intra-integrated-circuit chip optical-connections, where very low power-consumption is required for the light emitters, a LED can be a very attractive device because of the threshold-free input-output characteristics. So far, continuous efforts have been made to improve the performance of LEDs. In this paper, we focus on another very important aspect, i.e. the noise characteristics. In comparison with LDs, in general, LEDs exhibit excellent noise characteristics, particularly at low injection levels. We show that the intensity fluctuation of the output light from an LED can be squeezed below the full shot-noise (FSN) level in a wide frequency range up to 800 MHz at room temperature. Such a squeezing bandwidth, three orders of magnitude wider than that in the first report on shot-noise suppression in a LED and rather close to the widest bandwidth (1.1 GHz) obtained with LDs at 77 K has been believed to be impossible. In addition, use of a separate confinement hetero(SCH-) structure in the active region allowed us to use a moderate doping concentration (5 /spl times/ 10/sup 18/ cm/sup -3/), resulting in a sufficiently high internal quantum efficiency, /spl sim/30%.
We investigated the generation of sub-Poissonian light in light-emitting diodes (LEDs) in which the active region is heavily doped with Be. The squeezing of the intensity-fluctuation below the full-shot-noise level was observed in a wide frequency range, near-dc to 1.5 GHz. From the noise-suppression spectra, we evaluated the radiative recombination lifetime of electrons in the active region and confirmed that the lifetime is reduced with increasing doping density. The results demonstrate clearly the excellent noise properties as well as the capability of high-speed modulation of the LEDs.
The squeezing of the intensity noise in the extremely weak light emanating from a light-emitting diode (LED) was investigated. By the use of a tailor-made high-efficiency LED, in which the active region is heavily doped (∼3.5×1019 cm-3), we successfully observed sub-Poissonian light at an injection current and photocurrent as low as 1 µA and 160 nA, respectively, at room temperature. The experimental results also implied that the theoretical model describing the noise behavior needs to be refined, particularly in the case of extremely low injection levels where the nonradiative recombination process has a serious effect.
Summary form only given. Among a variety of schemes for nonclassical light generation, the generation of sub-Poissonian photon-states with semiconductor lasers or light-emitting-diodes (LEDs) has been attracting much attention, primarily from engineering point of view. In this talk, we shall present our experimental results, manifesting substantial noise suppression of output photon fluxes below standard quantum limit (SQL) level from a single LED surprisingly without recourse to high-impedance circuit at room temperature. The observed squeezing is interpreted semiquantitatively in terms of our new model including effects of microscopic backward pump process.