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Applied Physics Letters

Low hysteretic behavior of Al∕AlOx∕Al Josephson junctions

S. V. Lotkhov, E. Tolkacheva, D Balashov, M. Khabipov, F.-I. Buchholz, Alexander B Zorin

Published Sep 25, 2006• 20 citations
Publisher

Abstract

All-aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T≈25mK. Due to the high junction transparency, the IV characteristics showed only small hysteresis with a retrapping-to-switching current ratio of up to 80%. The observed critical currents were as large as 80%-100% of the Ambegaokar-Baratoff values. High barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the low hysteretic Al junctions promising for application in integrated rapid single-flux quantum - qubit circuitry.

DOI
10.1063/1.2357915

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Journal of Applied Physics•Jun 1, 1997•13 citations
All-aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T≈25mK. Due to the high junction transparency, the IV characteristics showed only small hysteresis with a retrapping-to-switching current ratio of up to 80%. The observed critical currents were as large as 80%-100% of the Ambegaokar-Baratoff values. High barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the low hysteretic Al junctions promising for application in integrated rapid single-flux quantum - qubit circuitry.
Self-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found to be of only small hysteresis with retrapping-to-switching current ratio of up to 80%. The observed critical currents were close to the Ambegaokar-Baratoff values (up to 80-100%). Good barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the self-shunted Al junctions promising for application in integrated RSFQ-qubit circuitry.
Aluminum Josephson junctions are the building blocks for the realization of superconducting quantum bits. Attention has been also paid to hybrid ferromagnetic Josephson junctions, which allow switching between different magnetic states, making them interesting for applications such as cryogenic memories, single-photon detectors, and spintronics. In this paper, we report on the fabrication and characterization of high-quality ferromagnetic Josephson junctions based on aluminum technology. We employed an innovative fabrication process inspired by niobium-based technology, allowing us to obtain very high-quality hybrid aluminum Josephson junctions; thus, supporting the use of ferromagnetic Josephson junctions in advanced quantum circuits. The fabrication process is described in detail and the main DC transport properties at low temperatures (current-voltage characteristic, critical current as a function of the temperature, and the external magnetic field) are reported. Here, we illustrate in detail the fabrication process, as well as the main DC transport properties at low temperatures (current-voltage characteristic, critical current as a function of the temperature, and the external magnetic field).
The competition between superconducting and ferromagnetic orderings in Josephson devices has promoted fundamental and applicative studies of high impact for superconducting digital technology, cryogenic memories, and spintronics, where the possibility of switching between different magnetic states is a crucial advantage. Here, we report on fabrication and characterization of very high quality tunnel ferromagnetic Josephson junctions (JJs) with aluminum electrodes, demonstrating hysteretic behavior of the magnetic field pattern preserving typical transport properties of Al junctions, underdamped behavior, and very low quasiparticle dissipation. The proposed technology paves the way for the possible implementation of Al tunnel-ferromagnetic JJs in superconducting quantum circuits, toward alternative approaches based on digital control of the Josephson device.
We report on the fabrication and millikelvin char acterization of Nb/Al–AlOx/Nb Josephson junctions directly de posited on X-cut LiNbO3 substrates. Motivated by the strong electro-optic and piezoelectric properties of LiNbO3, such devices are of interest for future hybrid superconducting–electro-optic architectures. The junctions were fabricated using standard processes involving DC magnetron sputtering followed by controlled thermal oxidation of the aluminum layer to form an AlOx tunnel barrier with reproducible junction areas. Insulation of the junctions was achieved by anodization and SiOx deposition. Electrical measurements performed at 30 mK reveal high-quality Josephson tunnel junction behavior with a critical current density ofJc= 70 A/cm2and a characteristic voltage reaching values up toVm= 286 mV. Differential conductance measurements exhibit pronounced quasiparticle peaks corresponding to a sum gap energy of 2Δ = (2.73 ± 0.05) meV, confirming the good quality of the Nb electrodes. Magnetic-field-dependent measure ments yield a Josephson penetration depth of λJ= 45 μm, confirming operation in the small-junction regime, with deviations from the ideal Josephson interference pattern attributed to non-uniform current distribution across the junction area. Compared to our previous characterization at 4.2 K, this work demonstrates reliable Josephson junction operation on LiNbO3 at dilution-refrigerator temperatures relevant for quantum circuits, supporting the suitability of lithium niobate as a promising substrate for future hybrid superconducting–electro-optic device implementations.
An interesting feature of Superconductor Normal metal Superconductor - Josephson junctions for digital applications is due to their non-hysteretic current-voltage characteristics in a broad temperature range below Tc. This allows to design Single-Flux-Quantum (SFQ) cells without the need of external shunts. Two advantages can be drawn from this property: first the SFQ cells can be more compact which leads to a more integrated solution towards nano-devices and more complex circuits; second the absence of electrical parasitic elements associated with the wiring of resistors external to the Josephson junctions increases the performance of SFQ circuits, in particular regarding the ultimate speed of operation. For this purpose Superconductor Normal metal Insulator-Superconductor Nb/Al-AlOx/Nb Josephson junctions have been recently developed at INRiM with aluminum layer thicknesses between 30 and 100 nm. They exhibit non-hysteretic current-voltage characteristics with RnIc values higher than 0.5 mV in a broad temperature range and optimal Stewart McCumber parameters at 4.2 K for RSFQ applications. The main features of obtained SNIS junctions regarding digital applications are presented.
Measurements of temperature dependence of the return current in high quality Nb/AlOx/Nb Josephson junctions are presented. From the experimental data, we obtain the effective resistance, i.e., the effective dissipation, for the retrapping process, according to the generalized resistively shunted junction model proposed by Chen, Fisher, and Leggett. We present a careful analysis, based on a comparison between the measured temperature dependencies of both the return and the quasiparticle tunneling current. We find that the junction subgap conductance, which includes the quasiparticle and the quasiparticle-pair interference terms, is responsible for the return process. The measurements have been performed on various samples, in a wide range of critical current densities from 50 to 2250 A/cm2, covering different damping regimes and spanning over the high and low temperature limits. Junctions with low critical current density show ideal dissipation which makes the return current scale with temperature according to the BCS exponential behavior without flattening out effects. This result may be relevant for the possible use of Nb/AlOx/Nb junctions in macroscopic quantum coherence experiments, which strongly require a very low dissipation.