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Applied Physics Letters

Aluminum-ferromagnetic Josephson tunnel junctions for high quality magnetic switching devices

Antonio Vettoliere, Roberta Satariano, Raffaella Ferraiuolo, Luigi Di Palma, Halima Giovanna Ahmad, G. Ausanio, Giovanni Piero Pepe, Francesco Tafuri, Domenico Montemurro, C. Granata, L. Parlato, D. Massarotti

Published Jun 27, 2022• 14 citations
Publisher

Abstract

The competition between superconducting and ferromagnetic orderings in Josephson devices has promoted fundamental and applicative studies of high impact for superconducting digital technology, cryogenic memories, and spintronics, where the possibility of switching between different magnetic states is a crucial advantage. Here, we report on fabrication and characterization of very high quality tunnel ferromagnetic Josephson junctions (JJs) with aluminum electrodes, demonstrating hysteretic behavior of the magnetic field pattern preserving typical transport properties of Al junctions, underdamped behavior, and very low quasiparticle dissipation. The proposed technology paves the way for the possible implementation of Al tunnel-ferromagnetic JJs in superconducting quantum circuits, toward alternative approaches based on digital control of the Josephson device.

DOI
10.1063/5.0101686

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The competition between superconducting and ferromagnetic orderings in Josephson devices has promoted fundamental and applicative studies of high impact for superconducting digital technology, cryogenic memories, and spintronics, where the possibility of switching between different magnetic states is a crucial advantage. Here, we report on fabrication and characterization of very high quality tunnel ferromagnetic Josephson junctions (JJs) with aluminum electrodes, demonstrating hysteretic behavior of the magnetic field pattern preserving typical transport properties of Al junctions, underdamped behavior, and very low quasiparticle dissipation. The proposed technology paves the way for the possible implementation of Al tunnel-ferromagnetic JJs in superconducting quantum circuits, toward alternative approaches based on digital control of the Josephson device.
Aluminum Josephson junctions are the building blocks for the realization of superconducting quantum bits. Attention has been also paid to hybrid ferromagnetic Josephson junctions, which allow switching between different magnetic states, making them interesting for applications such as cryogenic memories, single-photon detectors, and spintronics. In this paper, we report on the fabrication and characterization of high-quality ferromagnetic Josephson junctions based on aluminum technology. We employed an innovative fabrication process inspired by niobium-based technology, allowing us to obtain very high-quality hybrid aluminum Josephson junctions; thus, supporting the use of ferromagnetic Josephson junctions in advanced quantum circuits. The fabrication process is described in detail and the main DC transport properties at low temperatures (current-voltage characteristic, critical current as a function of the temperature, and the external magnetic field) are reported. Here, we illustrate in detail the fabrication process, as well as the main DC transport properties at low temperatures (current-voltage characteristic, critical current as a function of the temperature, and the external magnetic field).
We discuss the capabilities of ferromagnetic (F) Josephson junctions (JJs) in a variety of layouts and configurations. The main goal is to demonstrate the potential of these hybrid JJs to disclose new physics and the possibility to integrate them in superconducting classical and quantum electronics for various applications. The feasible path towards the use of ferromagnetic Josephson junctions in quantum circuits starts from experiments demonstrating macroscopic quantum tunneling in NbN/GdN/NbN junctions with ferro-insulator barriers and with triplet components of the supercurrent, supported by a self-consistent electrodynamic characterization as a function of the barrier thickness. This has inspired further studies on tunnel ferromagnetic junctions with a different layout and promoted the first generation of ferromagnetic Al-based JJs, specifically Al/AlOx/Al/Py/Al. This layout takes advantage of the capability to integrate the ferromagnetic layer in the junction without affecting the quality of the superconducting electrodes and of the tunnel barrier. The high quality of the devices paves the way for the possible implementation of Al tunnel-ferromagnetic JJs in superconducting quantum circuits. These achievements have promoted the notion of a novel type of qubit incorporating ferromagnetic JJs. This qubit is based on a transmon design featuring a tunnel JJ in parallel with a ferromagnetic JJ inside a SQUID loop capacitively coupled to a superconducting readout resonator. The effect of an external RF field on the magnetic switching processes of ferromagnetic JJs has been also investigated.
Abstract We investigate tunnel ferromagnetic Josephson junctions based on Superconductor-Insulator-thin superconductor-Ferromagnet-Superconductor multilayers. A comparative study of their electrodynamic properties is performed for junctions with niobium and aluminum (Al) electrodes, featuring different ferromagnetic interlayer materials and lateral dimensions ranging from the micrometric to the submicrometric scale. The parameters extracted from the fitting of the current-voltage characteristics using the tunnel junction microscopic model are found to be consistent with those independently estimated from switching current distribution measurements. Submicrometric Al-based devices exhibit electrodynamic properties comparable to those implemented in state-of-the-art transmon qubits and display clear signatures of quantum phase diffusion. The strong agreement between transport modelling and escape dynamics establishes a robust framework for describing hybrid ferromagnetic Josephson junctions consistent with their energy scales and supports their potential integration into superconducting quantum and classical digital circuits.
The continuous development of superconducting electronics is encouraging several studies on hybrid Josephson junctions (JJs) based on superconductor-ferromagnet-superconductor (SFS) heterostructures, as either spintronic devices or switchable elements in quantum and classical circuits. Recent experimental evidence of macroscopic quantum tunneling and of an incomplete 0-$\ensuremath{\pi}$ transition in tunnel-ferromagnetic spin-filter JJs could also enhance the capabilities of SFS JJs as active elements. Here, we provide a self-consistent electrodynamic characterization of NbN\mathrm{Nb}\mathrm{N}NbN/GdN\mathrm{Gd}\mathrm{N}GdN/NbN\mathrm{Nb}\mathrm{N}NbN spin-filter JJs as a function of the barrier thickness, disentangling the high-frequency dissipation effects due to the environment from the intrinsic low-frequency dissipation processes. The fitting of the III-VVV characteristics at 4.2 K and at 300 mK by using the tunnel-junction-microscopic model allows us to determine the subgap resistance Rsg{R}_{\mathrm{sg}}Rsg​, the quality factor QQQ, and the junction capacitance CCC. These results provide the scaling behavior of the electrodynamic parameters as a function of the barrier thickness, which represents a fundamental step for the feasibility of tunnel-ferromagnetic JJs as active elements in quantum and classical circuits, and are of general interest for tunnel junctions other than conventional SIS JJs.
We have realized submicron tunnel ferromagnetic Al/AlOx/Al/Ni80Fe20/Al Josephson junctions (JJs) in Manhattan-style configuration for qubit applications. These junctions have been designed to lie within the energy range of transmons. The current–voltage characteristics of these junctions are comparable with those of standard JJs implemented in state-of-the-art transmons, thus confirming the high quality of the devices and marking a significant step toward the realization of the ferrotransmon. Low-frequency characterization confirms that our junctions operate in the quantum phase diffusion limit, as tunnel JJs in conventional transmons with similar characteristic energies. Ultimately, mitigation of quantum phase fluctuations will represent a key for advancing the entire field of superconducting quantum circuit architectures.
We investigate a Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-superconductor-ferromagnet-superconductor (SIS'FS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SIS'FS junctions fall into two distinct classes based on the thickness of S'layer. We fabricate Nb-Al/AlOx-Nb-PdFe-Nb SIS'FS MJJs using a co-processing approach with a combination of HYPRES and ISSP fabrication processes. The resultant SIS'FS structure with thin superconducting S'-layer is substantially affected by the ferromagnetic layer as a whole. We fabricate these type of junctions to reach the device compatibility with conventional SIS junctions used for superconducting SFQ electronics to ensure a seamless integration of MJJ-based circuits and SIS JJ-based ultra-fast digital SFQ circuits. We report experimental results for MJJs, demonstrating their applicability for superconducting memory and digital circuits. These MJJs exhibitIcRnproduct only ~ 30% lower than that of conventional SIS junctions co-produced in the same fabrication. Analytical calculations for these SIS'FS structures are in a good agreement with the experiment. We discuss application of MJJ devices for memory and programmable logic circuits.