We investigate a Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-superconductor-ferromagnet-superconductor (SIS'FS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SIS'FS junctions fall into two distinct classes based on the thickness of S'layer. We fabricate Nb-Al/AlOx-Nb-PdFe-Nb SIS'FS MJJs using a co-processing approach with a combination of HYPRES and ISSP fabrication processes. The resultant SIS'FS structure with thin superconducting S'-layer is substantially affected by the ferromagnetic layer as a whole. We fabricate these type of junctions to reach the device compatibility with conventional SIS junctions used for superconducting SFQ electronics to ensure a seamless integration of MJJ-based circuits and SIS JJ-based ultra-fast digital SFQ circuits. We report experimental results for MJJs, demonstrating their applicability for superconducting memory and digital circuits. These MJJs exhibitIcRnproduct only ~ 30% lower than that of conventional SIS junctions co-produced in the same fabrication. Analytical calculations for these SIS'FS structures are in a good agreement with the experiment. We discuss application of MJJ devices for memory and programmable logic circuits.
We investigate a Magnetic Josephson Junction (MJJ) - a superconducting device with ferromagnetic barrier for a scalable high-density cryogenic memory compatible with energy-efficient single flux quantum (SFQ) circuits. The superconductor-insulator-superconductor-ferromagnet-superconductor (SIS'FS) MJJs are analyzed both experimentally and theoretically. We found that the properties of SIS'FS junctions fall into two distinct classes based on the thickness of S'layer. We fabricate Nb-Al/AlOx-Nb-PdFe-Nb SIS'FS MJJs using a co-processing approach with a combination of HYPRES and ISSP fabrication processes. The resultant SIS'FS structure with thin superconducting S'-layer is substantially affected by the ferromagnetic layer as a whole. We fabricate these type of junctions to reach the device compatibility with conventional SIS junctions used for superconducting SFQ electronics to ensure a seamless integration of MJJ-based circuits and SIS JJ-based ultra-fast digital SFQ circuits. We report experimental results for MJJs, demonstrating their applicability for superconducting memory and digital circuits. These MJJs exhibitIcRnproduct only ~ 30% lower than that of conventional SIS junctions co-produced in the same fabrication. Analytical calculations for these SIS'FS structures are in a good agreement with the experiment. We discuss application of MJJ devices for memory and programmable logic circuits.
The lack of dense, fast, energy efficient memory has been the main detractor for multiple superconducting digital projects in the past. Recently, fundamental physics research in superconductor-ferromagnet thin-film tunnel structures created a new opportunity to solve this long-standing problem. Superconductivity and ferromagnetism, two deeply antagonistic electronic properties, can co-exist in form of Magnetic Josephson Junctions (MJJs). The superconducting-ferromagnetic MJJs are electrically compatible with traditional superconductor-insulator-superconductor (SIS) Josephson junctions (JJs) used for digital energy-efficient single flux quantum (eSFQ/ERSFQ) circuits. Both MJJ and JJ circuits have similar fabrication process and can be integrated on a single chip. As a result, a combination of MJJs and JJs can be used to form addressable memory cells, energy-efficient memory periphery circuits and programmable logic elements. In this paper, we present the test results of superconductor-insulator-ferromagnet-superconductor (SIFS) MJJs showing their applicability for superconducting spintronic memory and digital circuits.
We develop a fast magnetic Josephson junction (MJJ)—a superconducting ferromagnetic device for a scalable high-density cryogenic memory compatible in speed and fabrication with energy-efficient single flux quantum (SFQ) circuits. We present experimental results for superconductor-insulator-ferromagnet-superconductor (SIFS) MJJs with high characteristic voltage IcRn of >700 μV proving their applicability for superconducting circuits. By applying magnetic field pulses, the device can be switched between MJJ logic states. The MJJ IcRn product is only ∼30% lower than that of conventional junction co-produced in the same process, allowing for integration of MJJ-based and SIS-based ultra-fast digital SFQ circuits operating at tens of gigahertz.
Abstract Storage of a single magnetic flux quantum in a superconducting loop containing a Josephson junction represents a promising unit cell configuration for construction of a cryogenic memory of superconducting digital circuits. However, application of a DC bias current is required for operation of such a memory cell to maintain trapping of the flux quantum in the storage loop. In this work, we present a superconducting memory cell that uses a superconducting-magnetic π junction. The cell characteristics show flux quantum hysteresis centering at the zero-bias current. We develop a fabrication process that combines superconductor–ferromagnet–superconductor (SFS) junctions with superconductor–normal metal–superconductor (SNS) junctions. The critical current density of the SFS junctions shows a 0–π oscillation as a function of the ferromagnetic layer thickness. The formation of the π junction is confirmed further by the flux modulation curves of a superconducting quantum interference device made from SNS junctions with an additional SFS junction.
We present a systematic study of the temperature-dependent transport properties of Nb- and Al-based superconductor--insulator--thin superconductor--ferromagnet--superconductor (SIsFS) Josephson junctions. By varying the superconducting material and the thickness of the intermediate superconducting layer, we identify three distinct transport regimes: a tunnel-dominated SIS-like regime, a temperature-driven crossover, and a complex weak-link regime. A unified Usadel-based description connects these regimes through the self-consistent pair potential of the intermediate s-layer. While for Al-based devices an SIS-like transport regime is observed, a self-consistent calculation of the s/F/S proximity electrode, combined with perturbative tunnel coupling to the outer electrode, accounts for Nb devices with different thickness of the superconducting interlayer. The calculation places the 10-nm-interlayer sample in a proximity-supported, strongly suppressed s state, close to the SInFS limit in which the interlayer is effectively driven normal (\textit{n}). A reduced nonlinear long-junction description captures the same limiting physics. The evolution of I_cR_N(T) thereby provides a direct experimental signature of the three transport regimes. Beyond the fundamental interest, the results establish practical design guidelines: Nb junctions with sufficiently thick s interlayers are well suited for high-speed cryogenic memory elements and tunable superconducting parametric amplifiers, while Al junctions are natural candidates for coherent superconducting quantum circuits
We discuss the capabilities of ferromagnetic (F) Josephson junctions (JJs) in a variety of layouts and configurations. The main goal is to demonstrate the potential of these hybrid JJs to disclose new physics and the possibility to integrate them in superconducting classical and quantum electronics for various applications. The feasible path towards the use of ferromagnetic Josephson junctions in quantum circuits starts from experiments demonstrating macroscopic quantum tunneling in NbN/GdN/NbN junctions with ferro-insulator barriers and with triplet components of the supercurrent, supported by a self-consistent electrodynamic characterization as a function of the barrier thickness. This has inspired further studies on tunnel ferromagnetic junctions with a different layout and promoted the first generation of ferromagnetic Al-based JJs, specifically Al/AlOx/Al/Py/Al. This layout takes advantage of the capability to integrate the ferromagnetic layer in the junction without affecting the quality of the superconducting electrodes and of the tunnel barrier. The high quality of the devices paves the way for the possible implementation of Al tunnel-ferromagnetic JJs in superconducting quantum circuits. These achievements have promoted the notion of a novel type of qubit incorporating ferromagnetic JJs. This qubit is based on a transmon design featuring a tunnel JJ in parallel with a ferromagnetic JJ inside a SQUID loop capacitively coupled to a superconducting readout resonator. The effect of an external RF field on the magnetic switching processes of ferromagnetic JJs has been also investigated.
The last several decades have seen an explosion in the use and size of computers for scientific applications. The US Department of Energy has set an ExaScale computing goal for high performance computing that is projected to be unattainable by current CMOS computing designs [1]. This has led to a renewed interest in superconducting computing as a means of beating these projections. One of the primary requirements of this thrust is the development of an efficient cryogenic memory. Estimates of power consumption of early Rapid Single Flux Quantum (RSFQ) memory designs are on the order of MW, far too steep for any real application [1]. Therefore, other memory concepts are required. S/F/S Josephson Junctions, a class of device in which two superconductors (S) are separated by one or more ferromagnetic layers (F) has shown promise as a memory element. Several different systems have been proposed utilizing either the spin-singlet or spin-triplet superconducting states [2]. This talk will discuss the concepts underpinning these devices, and the recent work done to demonstrate their feasibility. [1] Energy-Efficient Superconducting Computing Power Budgets and Requirements, D. Scott Holmes, Andrew L. Ripple, Marc A. Manheimer, IEEE Trans. Appl. Supercon., Vol 23, No. 3, June 2013 [2] B. M. Niedzielski et al., “Use of Pd-Fe and Ni-Fe-Nb as soft magnetic layers in ferromagnetic Josephson junctions for nonvolatile cryogenic memory,” IEEE Trans. Appl. Supercond., vol. 24, no. 4, Aug. 2014, Art. ID. 1800307.