An interesting feature of Superconductor Normal metal Superconductor - Josephson junctions for digital applications is due to their non-hysteretic current-voltage characteristics in a broad temperature range below Tc. This allows to design Single-Flux-Quantum (SFQ) cells without the need of external shunts. Two advantages can be drawn from this property: first the SFQ cells can be more compact which leads to a more integrated solution towards nano-devices and more complex circuits; second the absence of electrical parasitic elements associated with the wiring of resistors external to the Josephson junctions increases the performance of SFQ circuits, in particular regarding the ultimate speed of operation. For this purpose Superconductor Normal metal Insulator-Superconductor Nb/Al-AlOx/Nb Josephson junctions have been recently developed at INRiM with aluminum layer thicknesses between 30 and 100 nm. They exhibit non-hysteretic current-voltage characteristics with RnIc values higher than 0.5 mV in a broad temperature range and optimal Stewart McCumber parameters at 4.2 K for RSFQ applications. The main features of obtained SNIS junctions regarding digital applications are presented.
An interesting feature of Superconductor Normal metal Superconductor - Josephson junctions for digital applications is due to their non-hysteretic current-voltage characteristics in a broad temperature range below Tc. This allows to design Single-Flux-Quantum (SFQ) cells without the need of external shunts. Two advantages can be drawn from this property: first the SFQ cells can be more compact which leads to a more integrated solution towards nano-devices and more complex circuits; second the absence of electrical parasitic elements associated with the wiring of resistors external to the Josephson junctions increases the performance of SFQ circuits, in particular regarding the ultimate speed of operation. For this purpose Superconductor Normal metal Insulator-Superconductor Nb/Al-AlOx/Nb Josephson junctions have been recently developed at INRiM with aluminum layer thicknesses between 30 and 100 nm. They exhibit non-hysteretic current-voltage characteristics with RnIc values higher than 0.5 mV in a broad temperature range and optimal Stewart McCumber parameters at 4.2 K for RSFQ applications. The main features of obtained SNIS junctions regarding digital applications are presented.
SNS Nb/Al-AlOx/Nb Josephson junctions have been recently developed with Al layer thicknesses 30- 100 nm , for which non-hysteretic I-V characteristics have been obtained by oxidation ranging from 150 to 200 Pa.s. The Stewart-McCumber parameter of the junctions can be lower or higher than unity, depending on the above-mentioned conditions. Typical Jc values of several tens of kA/cm2 and RnIc values up to 0.5-0.7 mV at 4.2 K have been obtained, suitable for digital applications. Two interesting features of this technology are: i) the absence of external shunt resistance that can allow higher integration and; ii) the reproducibility of technological parameters that is connected to a least dependence of the Josephson critical current on the barrier thickness. In this work, we will present a detailed analysis of speed and jitter that can be expected from basic digital circuits based on such a technology. This analysis is based on the accurate experimental extraction of typical quantities, like the Stewart-McCumber parameter or specific capacitance. In particular, the influence of the temperature of operation on the performance of elementary cells will be assessed. A comparisonwith similar cells based on externally-shunted Josephson junctions will be presented in order to evaluate the ranges of parameters for which this technology exhibits some clear advantages. In particular we will show the technological constraints that need to be met in order to build circuits that can compete with existing technologies
The overdamped Nb/Al-AlOx/Nb superconductor-normal metal-insulator-superconductor SNIS Josephson junctions recently developed at INRIM exhibit high values of critical current density and characteristic voltage, making these devices appealing both for metrology and digital electronics. High current densities could allow reduction of junction size, increasing the integration level. In this work authors present first results concerning the realization of sub-μm SNIS including a nanolithographic technique (Electron Beam Lithography, EBL) into the conventional process, to reduce junction dimensions. Fabrication and electrical parameters have been evaluated considering the scaling of the areas of junctions, furthermore RF and temperature behaviour have been studied.
Improved Characteristics of Intrinsically Shunted Nb/Al−AlOx−Nb Josephson Junctions
Josephson junctions with non-hysteretic current-voltage characteristics form the basis of most superconducting electronic circuits including RSFQ logic and programmable Josephson voltage standards. In contrast to conventional SIS devices, Nb/Al-AlOx-Nb (SNIS) junctions with an additional comparatively thick Al interlayer and a comparatively thin barrier AlOxare intrinsically shunted at T ≥ 4.2 K . In this contribution, we provide experimental and theoretical arguments proving that this finding is mainly explained by a broad distribution of highly-conductive barrier transparencies with a significant effect from nearly ballistic modes. An additional advantage of the proposed SNIS junctions is possibility to tune the critical voltage value by modifying Nb and/or Al film thicknesses. With observations of wide Shapiro steps up to 1.25 V at 6.3 K we show that this type of Josephson junctions can be successfully used at temperatures above 4.2 K. The presence of well-developed quantized voltage features even at 7.2 K means that Nb/Al-AlOx-Nb devices can successfully operate far above the liquid helium temperature and, in principle, are compatible with two-stage cryocoolers.
Optimization of the performance of Nb-based overdamped Josephson junctions for applications to superconducting electronics is a major issue today. The use of cryocoolers, thus avoiding liquid helium refrigeration, with junctions working at temperatures higher than 4.2 K, could greatly increase the use of these devices in applications such as fundamental metrology and measurement sensors. The question we address here is how to maximize the characteristic voltage and minimize the temperature influence on the current-voltage curves of overdamped junctions enabling their use at T > 4.2K. To optimize the properties of a single Josephson heterostructure, we propose a type of overdamped junction that consists of a relatively thin insulating layer and a thick (tens of nm) normal-metal film between two superconducting electrodes. Measurements of the dependence of the critical current and characteristic voltage as function of temperature for dierent electrodes configurations show how it is possible to improve the design of these junctions.
Abstract We report on the electrical properties of NbN/TaN/NbN Josephson junctions grown on thermally oxidized silicon substrates, along with the design and fabrication of superconducting single-flux-quantum (SFQ) circuits based on these NbN superconductor/normal metal/superconductor (SNS) junctions. The critical current density ( J c ) of the junctions was found to be relatively sensitive to the barrier thickness, decreasing from 108.0 ± 8.1 kA cm −2 for a 15 nm barrier to 12.8 ± 1.9 kA cm −2 for a 30 nm barrier. For a J c of approximately 24.5 ± 2.1 kA cm −2 and a barrier thickness of 25 nm, the NbN SNS junctions are self-shunted and exhibit nonhysteretic current–voltage ( I – V ) characteristics. Especially for junctions with diameter ( φ ) ranging from 0.8 to 1.6 μ m, their critical current ( I c ) falls within the range of 110–450 μ A, making them suitable for SFQ circuits. By considering the impact of excess current and incorporating it as an additional term in the conventional resistively and capacitively shunted junction model, the I – V curves of NbN SNS junctions can be precisely described, successfully minimizing the deviation between simulations and test results. The DC-SFQ and SFQ-DC interface circuits can both operate normally, and the bias margins of cell circuits such as Josephson transmission line, confluence buffer, D flip-flop, and splitter are greater than 40%. Compared to Nb superconductor/insulator/superconductor junctions, their self-shunting characteristics and relatively thick 25 nm barriers can also enhance the integration of circuits and increase the yield to complex circuits.
Intrinsically shunted Josephson junctions based on NbN superconducting material can exhibit RnIc products in the1-3 mV range at temperatures in the 4-10K range, while presenting non hysteretic current-voltage characteristics. For these reasons, they are a suitable alternative for digital electronics since they can be ultimately highly integrated, while operating at clock frequencies above 100 GHz. In this work, departing from some experimental data of Josephson junctions measured in different conditions, we will present the expected performances in terms of ultimate speed, bit-error-rate and temperature of operation that can be reached with such a technology, for a few breadboard digital circuits. Circuits using interface converters, Josephson transmission lines, shift registers and several flip-flop cells are investigated for this purpose. An analysis is done in order to compare the potentialities and drawbacks of this technology with its existing low-Tc and high-Tc counterparts. The emphasis will be put on the technological requirements that are necessary to be met in order to achieve a given performance.