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arXiv:2607.22294

Substrate-metal interface engineering enhances TaN/Ta thin film superconducting resonator performance

Moritz Singer, Harsh Gupta, Benedikt Schoof, Elena Willinger, Anton Orekhov, Alexandra Schewski, Samuil Kostadinov, Philip Constantin Schneider, Marc Tornow

cond-mat.mtrl-scicond-mat.supr-conquant-phSubmitted Jul 24, 2026• Announced Jul 27, 2026• 0 citations• Revised Jul 27, 2026 (v2)
v1 · Jul 24, 2026v2 · Jul 27, 2026v3 · Jul 29, 2026
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Abstract

Tantalum has been demonstrated as a promising material for superconducting qubits. However, comparatively little attention has been given to its nitrides. Tantalum nitride exhibits a range of stoichiometries, resulting in a variety of material properties, including both superconducting and non-superconducting phases. Owing to this versatility, tantalum nitrides can serve multiple purposes in superconducting qubits: as seed layers for alpha-Ta growth, as a superconducting base material and as a non-superconducting barrier in the Josephson junction. In this study, we explore the performance of superconducting TaN and Ta thin film combinations on silicon substrates in terms of internal quality factor Qi. We find that standalone TaN films exhibit Qi values of about 1.5x10^5 at 100mK in the single-photon regime. Surprisingly, a resonator made from Ta grown on a few-nanometers-thick TaN seed layer yields largely the same performance. However, adding an additional, few-nanometers-thick Ta buffer layer between the Si substrate and this TaN seed layer enhances Qi significantly up to 5.9x10^5. Supporting transmission electron microscopy measurements reveal nitrogen accumulation and structural disorder at the TaN-Si interface, while this interfacial modification is suppressed when the Ta buffer layer is introduced. The observed improvement in resonator performance is consistent with a reduction of interface-related two-level system losses and strongly supports the hypothesis that controlling the substrate-metal interface is pivotal for the performance of superconducting qubit circuitry.

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Tantalum has been demonstrated as a promising material for superconducting qubits. However, comparatively little attention has been given to its nitrides. Tantalum nitride exhibits a range of stoichiometries, resulting in a variety of material properties, including both superconducting and non-superconducting phases. Owing to this versatility, tantalum nitrides can serve multiple purposes in superconducting qubits: as seed layers for alpha-Ta growth, as a superconducting base material and as a non-superconducting barrier in the Josephson junction. In this study, we explore the performance of superconducting TaN and Ta thin film combinations on silicon substrates in terms of internal quality factor Qi. We find that standalone TaN films exhibit Qi values of about 1.5x10^5 at 100mK in the single-photon regime. Surprisingly, a resonator made from Ta grown on a few-nanometers-thick TaN seed layer yields largely the same performance. However, adding an additional, few-nanometers-thick Ta buffer layer between the Si substrate and this TaN seed layer enhances Qi significantly up to 5.9x10^5. Supporting transmission electron microscopy measurements reveal nitrogen accumulation and structural disorder at the TaN-Si interface, while this interfacial modification is suppressed when the Ta buffer layer is introduced. The observed improvement in resonator performance is consistent with a reduction of interface-related two-level system losses and strongly supports the hypothesis that controlling the substrate-metal interface is pivotal for the performance of superconducting qubit circuitry.
Superconducting qubits are a promising platform for large-scale quantum computing. Besides the Josephson junction, most parts of a superconducting qubit are made of a planar, patterned superconducting thin films. In the past, most qubit architectures have relied on niobium (Nb) as the material of choice for the superconducting layer. However, there is also a variety of alternative materials with potentially less losses, which may thereby result in increased qubit performance. One such material is tantalum (Ta), for which high-performance qubit components have already been demonstrated. In this study, we report the sputter-deposition of Ta thin films directly on heated and unheated silicon (Si) substrates as well as onto different, nanometer-thin seed layers from tantalum nitride (TaN), titanium nitride (TiN) or aluminum nitride (AIN) that were deposited first. The thin films are characterized in terms of surface morphology, crystal structure, phase composition, critical temperature, residual resistance ratio (RRR) and RF-performance. We obtain thin films indicative of pure alpha-Ta for high temperature (600°C) sputtering directly on silicon and for Ta deposited on TaN or TiN seed layers. Coplanar waveguide (CPW) resonator measurements show that the Ta deposited directly on the heated silicon substrate performs best with internal quality factors Qi reaching 1xl06in the single-photon regime, measured at T=100 mK.
Tantalum (Ta) is a promising material for reaching long coherence times in superconducting qubits. A detailed understanding of the underlying structure-property relationship remains elusive though. In the present study, we sputter-deposited 200 nm thick Ta films on high-resistivity silicon (100) substrates at temperatures ranging from T = 20°C to 600°C, as well as on different seed layers (Nb, TiN and TaN). Alpha-Ta thin films were readily obtained at temperatures above 500°C and on all seed layers. The films were characterized in terms of surface morphology, residual-resistance ratio, crystal phase composition and superconducting transition temperature, as well as RF-performance using coplanar waveguide resonators. Internal quality factors of up to 1.5 million were measured at 100 mK in the single-photon regime. Despite similar bulk material properties, alpha-Ta films on different seed layers exhibit markedly different RF-performance, which we attribute to dissimilar strain and structural defects at the substrate-metal interfaces. Williamson-Hall analysis of XRD data reveals a clear correlation between decreasing microstrain and increasing quality factor. Cross-sectional HR-TEM further supports this interpretation by directly resolving interfacial disorder. Our results highlight the critical role of interface engineering in optimizing superconducting thin films for low-loss quantum computing circuitry.
Superconducting coplanar waveguide resonators are essential components in quantum processors, where their internal quality factor (Qi) constrains qubit coherence and readout fidelity. In niobium devices, microwave losses at millikelvin temperatures are strongly influenced by two-level systems (TLS) associated with the complex NbOx surface oxide. To mitigate these losses, we investigate a surface-engineering approach in which Nb films are capped in situ with a thin tantalum layer to suppress Nb2O5 formation and replace the native NbOx interface with a Ta-based oxide. We fabricate Nb/Ta bilayer and reference Nb resonators on high-resistivity silicon using identical DC sputtering and wet etching conditions, and characterize their performance at millikelvin temperatures. Fresh Ta-encapsulated devices exhibit internal quality factors up to 2.4 x 10^6 in the near-single-photon regime, with power dependence consistent with reduced TLS-related loss at the metal-air interface. A control Nb device fabricated under the same process shows comparatively lower Q_TLS, consistent with the beneficial effect of the Ta capping layer. Furthermore, ageing tests performed on Nb/Ta resonators after six months reveal a moderate reduction in Q_TLS relative to their initial values, yet the performance remains superior to newly fabricated Nb-only devices. These results suggest that thin Ta encapsulation enhances interface quality and contributes to improved temporal stability while remaining compatible with Nb-based fabrication workflows.
Tantalum thin films sputtered on unheated silicon substrates are characterized with microwaves at around 10 GHz in a 10 mK environment. We show that the phase of tantalum with a body-centered cubic lattice (α-Ta) can be grown selectively by depositing a niobium buffer layer prior to a tantalum film. The physical properties of the films, such as superconducting transition temperature and crystallinity, change markedly with the addition of the buffer layer. Coplanar waveguide resonators based on the composite film exhibit significantly enhanced internal quality factors compared with a film without the buffer layer. The internal quality factor approaches 2 × 107 at a large-photon-number limit. While the quality factor decreases at the single-photon level owing to two-level system (TLS) loss, we have deduced that one of the causes of TLS loss is the amorphous silicon layer at the film–substrate interface, which originates from the substrate cleaning before the film deposition rather than the film itself. The temperature dependence of the internal quality factors shows a marked rise below 200 mK, suggesting the presence of TLS–TLS interactions. The present low-loss tantalum films can be deposited without substrate heating and thus have various potential applications in superconducting quantum electronics.
Abstract The use of α -tantalum in superconducting circuits has enabled a considerable improvement in the coherence time of transmon qubits. The standard approach to grow α -tantalum thin films on silicon involves heating the substrate, which takes several hours per deposition and prevents the integration of this material with wafers containing temperature-sensitive components. We report a detailed experimental study of an alternative growth method of α -tantalum on silicon, which is achieved at room temperature through the use of a niobium seed layer. Despite a substantially higher density of oxygen-rich grain boundaries in the films sputtered at room temperature, resonators made from these films are found to have state-of-the-art quality factors, comparable to resonators fabricated from tantalum grown at high temperature. This finding challenges previous assumptions about correlations between material properties and microwave loss of superconducting thin films, and opens a new avenue for the integration of tantalum into fabrication flows with limited thermal budget.
We demonstrate a substantial reduction in two-level system loss in tantalum coplanar waveguide resonators fabricated on high-resistivity silicon substrates through the use of an ultrathin titanium sacrificial layer. A 0.2nm titanium film, deposited atop pre-sputtered α-tantalum, acts as a solid-state oxygen getter that chemically modifies the native Ta oxide at the metal-air interface. After device fabrication, the titanium layer is removed using buffered oxide etchant, leaving behind a chemically reduced Ta oxide surface. Subsequent high-vacuum annealing further suppresses two-level system loss. Resonators treated with this process exhibit internal quality factors Qi exceeding an average of 1.5 million in the single-photon regime across ten devices, over three times higher than otherwise identical devices lacking the titanium layer. These results highlight the critical role of interfacial oxide chemistry in superconducting loss and reinforce atomic-scale surface engineering as an effective approach to improving coherence in tantalum-based quantum circuits. The method is compatible with existing fabrication workflows applicable to tantalum films, offering a practical route to further extending T1 lifetimes in superconducting qubits.