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arXiv:2512.10174

Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device

Andreas Nickl, Nard Dumoulin Stuyck, Paul Steinacker, Jesus D. Cifuentes, Santiago Serrano, MengKe Feng, Ensar Vahapoglu, Fay E. Hudson, Kok Wai Chan, Stefan Kubicek, Julien Jussot, Yann Canvel, Sofie Beyne, Yosuke Shimura, Roger Loo, Clement Godfrin, Bart Raes, Sylvain Baudot, Danny Wan, Arne Laucht, Chih-Hwan Yang, Wee Han Lim, Andre Saraiva, Christopher C. Escott, Kristiaan De Greve, Andrew S. Dzurak, Tuomo Tanttu

quant-phSubmitted Dec 11, 2025• Announced Dec 12, 2025• Revised Jun 1, 2026 (v2)
v1 · Dec 11, 2025v2 · Jun 1, 2026
arXivHTMLPDF

Abstract

Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so far been limited to a few qubits. Here, to take a step towards larger qubit systems, we tune and coherently control an eight-dot linear array of silicon spin qubits fabricated in a 300~mm CMOS-compatible foundry process, establishing operational scalability beyond the two-qubit regime. All eight qubits are successfully tuned and characterized as four double-dot pairs, exhibiting Ramsey dephasing times $T_2^*$ up to 41(2)$~μ$s and Hahn-echo coherence times $T_2^{\mathrm{Hahn}}$ up to 1.31(4)$~$ms. Readout of the central four qubits is achieved via a cascaded charge-sensing protocol, enabling high-fidelity measurements of the entire multi-qubit array in a two step process. Additionally, we demonstrate a two-qubit gate operation between adjacent qubits with low phase noise. We show that silicon spin qubit arrays can be scaled to medium-sized arrays of 8 qubits while maintaining system coherence.

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Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so far been limited to a few qubits. Here, to take a step towards larger qubit systems, we tune and coherently control an eight-dot linear array of silicon spin qubits fabricated in a 300~mm CMOS-compatible foundry process, establishing operational scalability beyond the two-qubit regime. All eight qubits are successfully tuned and characterized as four double-dot pairs, exhibiting Ramsey dephasing times T2∗T_2^*T2∗​ up to 41(2) μ~μ μs and Hahn-echo coherence times T2HahnT_2^{\mathrm{Hahn}}T2Hahn​ up to 1.31(4) ~ ms. Readout of the central four qubits is achieved via a cascaded charge-sensing protocol, enabling high-fidelity measurements of the entire multi-qubit array in a two step process. Additionally, we demonstrate a two-qubit gate operation between adjacent qubits with low phase noise. We show that silicon spin qubit arrays can be scaled to medium-sized arrays of 8 qubits while maintaining system coherence.
Abstract Among the many types of qubit presently being investigated for a future quantum computer, silicon spin qubits with millions of qubits on a single chip are uniquely positioned to enable quantum computing. However, it has not been clear whether the outstanding high-fidelity operations and long coherence times shown by silicon spin qubits fabricated in academic settings 1–8 can be reliably reproduced when the qubits are manufactured in a semiconductor foundry 9–11 . Here we show precise qubit operation of silicon two-qubit devices made with standard semiconductor tooling in a 300-mm foundry environment. Of the key metrics, single- and two-qubit control fidelities exceed 99% for all four devices, and the state preparation and measurement fidelities reach up to 99.9%, as evidenced by gate set tomography. We report spin lifetime and coherence up to T 1 = 9.5 s, T2∗=40.6 μs{T}_{2}^{* }=40.6\,{\rm{\mu }}{\rm{s}}T2∗​=40.6μs T 2 * = 40.6 μ s and T2Hahn=1.9 ms{T}_{2}^{{\rm{Hahn}}}=1.9\,{\rm{ms}}T2Hahn​=1.9ms T 2 Hahn = 1.9 ms . We determine that residual nuclear spin-carrying isotopes contribute substantially to operational errors, identifying further isotopic purification as a clear pathway to even higher performance.
Silicon-based spin qubits have emerged as a promising platform for scalable quantum computation due to their compatibility with advanced semiconductor fabrication and integration with classical CMOS electronics. As fabrication capabilities advance toward larger, higher-yield devices, the field is transitioning from academic prototypes toward processors ultimately requiring millions of qubits. This shift places increasing emphasis on developing operating techniques that scale with qubit number. In this thesis, a four qubit SiMOS processor is used to investigate three key aspects of multi-qubit operation for spin-based quantum computing. First, tuning and operation techniques for parallel double-quantum-dot unit cells are developed. Electron loading strategies enable four-qubit operation in an isolated charge configuration, and universal single- and two-qubit control is demonstrated. The native gate set is characterised using gate set tomography. The processor is operated as two unit cells that can be initialised and read out in parallel, providing two independent parity measurements per shot, without increasing operation time or degrading state preparation and measurement fidelity. Second, control techniques for generating multi-qubit entangled states and executing general quantum circuits are established. Three-qubit maximally entangled states, including cluster and Greenberger–Horne–Zeilinger states, are generated and measured with a maximum fidelity of 82.5%. A Mermin value of 3.14 is achieved, certifying genuine tripartite entanglement. A fully symmetric dynamically decoupled gate sequence is developed, extending the entanglement lifetime beyond T2* to a limit set by T2-Hahn. A workflow for compiling, executing, and analysing arbitrary circuits from OpenQASM is also demonstrated. Finally, the first mid-circuit measurements in a silicon spin-qubit system are presented. This capability is extended to feedforward control, including a novel “in-layer” method that performs conditional phase operations without routing information to the classical control layer. This approach leverages measurement-induced backaction as a control mechanism. Both in-layer and FPGA-enabled feedforward strategies are benchmarked, and their dominant error channels are identified.
The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes that combine nanometer-scale precision with exceptional uniformity. Although the highest-performing silicon spin qubits demonstrated to date have relied on electron-beam (e-beam) lithography, its serial exposure process limits reproducibility studies and wafer-scale fabrication. Here, we demonstrate high-performance silicon metal-oxide-semiconductor (SiMOS) spin qubits fabricated using extreme-ultraviolet (EUV) lithography in a 300 mm semiconductor pilot line. We report wafer-scale quantum-dot uniformity metrics, including 100 % room-temperature gate-to-gate leakage yield and sub-nanometer control of critical gate dimensions. We characterize four double-dot systems realized in two triple-quantum-dot devices. Gate set tomography (GST) reveals consistently high fidelities across all four systems, with values up to 99.8 % for SPAM, 99.9 % for single-qubit gates, and 99.1 % for two-qubit gates. The devices exhibit highly reproducible exchange turn-on characteristics of 10-13 dec/V, indicating high fabrication uniformity enabled by EUV patterning. These results establish EUV lithography as a viable manufacturing technology for quantum processors based on high-fidelity SiMOS spin qubits.
Quantum computing is predicted to provide unprecedented enhancements in computational power. A quantum computer requires implementation of a well-defined and controlled quantum system of many interconnected qubits, each defined using fragile quantum states. The interest in a spin-based quantum computer in silicon stems from demonstrations of very long spin-coherence times, high-fidelity single spin control and compatibility with industrial mass-fabrication. Industrial scale fabrication of the silicon platform offers a clear route towards a large-scale quantum computer, however, some of the processes and techniques employed in qubit demonstrators are incompatible with a dense and foundry-fabricated architecture. In particular, spin-readout utilises external sensors that require nearly the same footprint as qubit devices. In this thesis, improved readout techniques for silicon quantum devices are presented and routes towards implementation of a scalable and high-sensitivity readout architecture are investigated. Firstly, readout sensitivity of compact gate-based sensors is improved using a high-quality factor resonator and Josephson parametric amplifier that are fabricated separately from quantum dots. Secondly, an integrated transistor-based control circuit is presented using which sequential readout of two quantum dot devices using the same gate-based sensor is achieved. Finally, a large-scale readout architecture based on random-access and frequency multiplexing is introduced. The impact of readout circuit footprint on readout sensitivity is determined, showing routes towards integration of conventional circuits with quantum devices in a dense architecture, and a fault-tolerant architecture based on mediated exchange is introduced, capable of relaxing the limitations on available control circuit footprint per qubit. Demonstrations are based on foundry-fabricated transistors and few-electron quantum dots, showing that industry fabrication is a viable route towards quantum computation at a scale large enough to begin addressing the most challenging computational problems.
Semiconductor quantum dot arrays are a promising platform to perform spin-based error-corrected quantum computation with large numbers of qubits. However, due to the diverging number of possible charge configurations combined with the limited sensitivity of large-footprint charge sensors, achieving single-spin occupancy in each dot in a growing quantum dot array is exceedingly complex. Therefore, to scale-up a spin-based architecture we must change how individual charges are readout and controlled. Here, we demonstrate single-spin occupancy of each dot in a foundry-fabricated array by combining two methods. 1/ Loading a finite number of electrons into the quantum dot array; simplifying electrostatic tuning by isolating the array from the reservoirs. 2/ Deploying multiplex gate-based reflectometry to dispersively probe charge tunneling and spin states without charge sensors or reservoirs. Our isolated arrays probed by embedded multiplex readout can be readily electrostatically tuned. They are thus a viable, scalable approach for spin-based quantum architectures. Large-footprint, low-sensitivity charge sensors hinder scaling semiconductor quantum dot arrays for quantum computation. Here the authors present a potentially scalable approach using multiplexed gate-based readout and operation in a foundry-fabricated quantum dot array, demonstrating single-electron occupancy.
Spin qubits in silicon-MOS (SiMOS) quantum dots have recently demonstrated compatibility with existing industry standard CMOS fabrication techniques. These devices have routinely achieved single- and two-qubit gate fidelities above 99% and demonstrated highly entangled two-qubit Bell states in isolated double quantum dot (DQD) unit cells, however coupling between unit cells has remained challenging. In this work, we present a two unit cell, four-qubit SiMOS processor with universal controllability and fully parallelised state initialisation and readout. We use this processor to generate maximally entangled three-qubit states, including the Greenberger-Horne-Zeilinger (GHZ) state, and certify multipartite entanglement through violation of the classical Mermin-witness bound. By using a fully symmetric dynamically decoupled gate sequence to create our entangled states, we are able to preserve the lifetime of the entanglement beyond T2∗T_2^*T2∗​, to a time limited instead by T2HahnT_2^\textrm{Hahn}T2Hahn​. These demonstrations pave a road to the scalable operation of larger SiMOS processors, and achieving high purity, long-lived multi-qubit entangled states in them.