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arXiv:2605.20781

Multi-Qubit Entanglement of Unit Cell Pairs in SiMOS

Cameron Jones, Jonathan Y. Huang, Santiago Serrano, MengKe Feng, Gerardo A. Paz-Silva, Tuomo Tanttu, Paul Steinacker, Fay E. Hudson, Wee Han Lim, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Andrew S. Dzurak, Andre Saraiva, Arne Laucht, Chih Hwan Yang

quant-phcond-mat.mes-hallSubmitted May 20, 2026• Announced May 21, 2026• 0 citations
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Abstract

Spin qubits in silicon-MOS (SiMOS) quantum dots have recently demonstrated compatibility with existing industry standard CMOS fabrication techniques. These devices have routinely achieved single- and two-qubit gate fidelities above 99% and demonstrated highly entangled two-qubit Bell states in isolated double quantum dot (DQD) unit cells, however coupling between unit cells has remained challenging. In this work, we present a two unit cell, four-qubit SiMOS processor with universal controllability and fully parallelised state initialisation and readout. We use this processor to generate maximally entangled three-qubit states, including the Greenberger-Horne-Zeilinger (GHZ) state, and certify multipartite entanglement through violation of the classical Mermin-witness bound. By using a fully symmetric dynamically decoupled gate sequence to create our entangled states, we are able to preserve the lifetime of the entanglement beyond $T_2^*$, to a time limited instead by $T_2^\textrm{Hahn}$. These demonstrations pave a road to the scalable operation of larger SiMOS processors, and achieving high purity, long-lived multi-qubit entangled states in them.

Comments
20 pages, 12 figures

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Spin qubits in silicon-MOS (SiMOS) quantum dots have recently demonstrated compatibility with existing industry standard CMOS fabrication techniques. These devices have routinely achieved single- and two-qubit gate fidelities above 99% and demonstrated highly entangled two-qubit Bell states in isolated double quantum dot (DQD) unit cells, however coupling between unit cells has remained challenging. In this work, we present a two unit cell, four-qubit SiMOS processor with universal controllability and fully parallelised state initialisation and readout. We use this processor to generate maximally entangled three-qubit states, including the Greenberger-Horne-Zeilinger (GHZ) state, and certify multipartite entanglement through violation of the classical Mermin-witness bound. By using a fully symmetric dynamically decoupled gate sequence to create our entangled states, we are able to preserve the lifetime of the entanglement beyond T2∗T_2^*T2∗​, to a time limited instead by T2HahnT_2^\textrm{Hahn}T2Hahn​. These demonstrations pave a road to the scalable operation of larger SiMOS processors, and achieving high purity, long-lived multi-qubit entangled states in them.
Silicon-based spin qubits have emerged as a promising platform for scalable quantum computation due to their compatibility with advanced semiconductor fabrication and integration with classical CMOS electronics. As fabrication capabilities advance toward larger, higher-yield devices, the field is transitioning from academic prototypes toward processors ultimately requiring millions of qubits. This shift places increasing emphasis on developing operating techniques that scale with qubit number. In this thesis, a four qubit SiMOS processor is used to investigate three key aspects of multi-qubit operation for spin-based quantum computing. First, tuning and operation techniques for parallel double-quantum-dot unit cells are developed. Electron loading strategies enable four-qubit operation in an isolated charge configuration, and universal single- and two-qubit control is demonstrated. The native gate set is characterised using gate set tomography. The processor is operated as two unit cells that can be initialised and read out in parallel, providing two independent parity measurements per shot, without increasing operation time or degrading state preparation and measurement fidelity. Second, control techniques for generating multi-qubit entangled states and executing general quantum circuits are established. Three-qubit maximally entangled states, including cluster and Greenberger–Horne–Zeilinger states, are generated and measured with a maximum fidelity of 82.5%. A Mermin value of 3.14 is achieved, certifying genuine tripartite entanglement. A fully symmetric dynamically decoupled gate sequence is developed, extending the entanglement lifetime beyond T2* to a limit set by T2-Hahn. A workflow for compiling, executing, and analysing arbitrary circuits from OpenQASM is also demonstrated. Finally, the first mid-circuit measurements in a silicon spin-qubit system are presented. This capability is extended to feedforward control, including a novel “in-layer” method that performs conditional phase operations without routing information to the classical control layer. This approach leverages measurement-induced backaction as a control mechanism. Both in-layer and FPGA-enabled feedforward strategies are benchmarked, and their dominant error channels are identified.
Abstract Among the many types of qubit presently being investigated for a future quantum computer, silicon spin qubits with millions of qubits on a single chip are uniquely positioned to enable quantum computing. However, it has not been clear whether the outstanding high-fidelity operations and long coherence times shown by silicon spin qubits fabricated in academic settings 1–8 can be reliably reproduced when the qubits are manufactured in a semiconductor foundry 9–11 . Here we show precise qubit operation of silicon two-qubit devices made with standard semiconductor tooling in a 300-mm foundry environment. Of the key metrics, single- and two-qubit control fidelities exceed 99% for all four devices, and the state preparation and measurement fidelities reach up to 99.9%, as evidenced by gate set tomography. We report spin lifetime and coherence up to T 1 = 9.5 s, T2∗=40.6 μs{T}_{2}^{* }=40.6\,{\rm{\mu }}{\rm{s}}T2∗​=40.6μs T 2 * = 40.6 μ s and T2Hahn=1.9 ms{T}_{2}^{{\rm{Hahn}}}=1.9\,{\rm{ms}}T2Hahn​=1.9ms T 2 Hahn = 1.9 ms . We determine that residual nuclear spin-carrying isotopes contribute substantially to operational errors, identifying further isotopic purification as a clear pathway to even higher performance.
Silicon spin qubits offer high-fidelity control and semiconductor manufacturing compatibility. However, the systematic generation and characterization of multiparticle entanglement, a core resource for quantum information science, remain elusive in such systems. Here, we demonstrate the complete preparation of all nine canonical families of four-qubit entanglement between donor spins in silicon, by designing hardware-efficient quantum circuits that use native multi-qubit operations. We employ advanced overlapping tomography and multifaceted verification to fully characterize these states. Our results confirm genuine multiparticle entanglement, resolve their entanglement structure, and assess their robustness under qubit loss. Moreover, we observe significant violations of multiparticle Bell-type inequalities for genuine four-qubit nonlocality. On the prepared Greenberger-Horne-Zeilinger state, we further uncover a noise-induced entanglement dynamics from distillable to bound and finally to separable, with bound entanglement unlocked via joint measurement. This work generates diverse entanglement resources alongside their complete characterization, establishing a foundation for entanglement-enabled quantum applications in silicon. Multiparticle entanglement in silicon spin qubits has been difficult to generate and fully characterize beyond three-qubit Greenberger-Horne-Zeilinger states. Here, the authors demonstrate complete preparation and verification of all nine canonical families of four qubit entanglement in donor spins in silicon.
The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes that combine nanometer-scale precision with exceptional uniformity. Although the highest-performing silicon spin qubits demonstrated to date have relied on electron-beam (e-beam) lithography, its serial exposure process limits reproducibility studies and wafer-scale fabrication. Here, we demonstrate high-performance silicon metal-oxide-semiconductor (SiMOS) spin qubits fabricated using extreme-ultraviolet (EUV) lithography in a 300 mm semiconductor pilot line. We report wafer-scale quantum-dot uniformity metrics, including 100 % room-temperature gate-to-gate leakage yield and sub-nanometer control of critical gate dimensions. We characterize four double-dot systems realized in two triple-quantum-dot devices. Gate set tomography (GST) reveals consistently high fidelities across all four systems, with values up to 99.8 % for SPAM, 99.9 % for single-qubit gates, and 99.1 % for two-qubit gates. The devices exhibit highly reproducible exchange turn-on characteristics of 10-13 dec/V, indicating high fabrication uniformity enabled by EUV patterning. These results establish EUV lithography as a viable manufacturing technology for quantum processors based on high-fidelity SiMOS spin qubits.
The understanding of quantum mechanics enabled the development of technology such as transistors and has been the foundation of today’s information age. Actively using quantum mechanics to build quantum technology may cause a second revolution in handling information. However, to execute meaningful algorithms, largescale quantum computers have to be built. Such systems are constructed from many qubits, the quantum version of the classical bit. While exciting progress is being made across a range of different qubit platforms, achieving the radical scalability that is necessary to build a largescale processor could be a roadblock. Huge challenges are put on reproducibility, inand output connectivity and material quality. Qubits based on the spins of electrons and holes confined in semiconductor quantum dots may have an important advantage in constructing quantum processors. This platform can profit from the advanced semiconductor industry that was responsible for the first computing revolution. Group IV semiconductors such as silicon and germanium have a high compatibility with industrial semiconductor manufacturing and contain stable isotopes with zero nuclear spin. The materials can be isotopically purified and serve as excellent hosts for spins with long quantum coherence. In Chapter 3 we present quantum dot arrays in silicon metaloxidesemiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). A nearly identical integration scheme based on an overlapping gate structure can be used to define quantum dots in each platform. Each platform has its own opportunities, which are carefully assessed. By employing charge sensing we confirm that all quantum dots can be depleted to the singleelectron regime. We compare capacitive crosstalk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. Using this crossplatform integration, we can study qubits in each platform with minimal overhead. Long coherence times, excellent singlequbit gate fidelities and twoqubit logic have been demonstrated with SiMOS spin qubits, making it one of the leading platforms for quantum information processing. However, due to the high disorder at the Si/SiO2 interface compared to Ge/SiGe and Si/SiGe interface, quantum dots defined in SiMOS are small and achieving sufficient control over single electrons has been a long standing challenge. In Chapter 5 we show experiments on a double quantum dot that can be isolated from its reservoir. We demonstrate a tunable tunnel coupling between single electrons up to 13 GHz and tunable tunnel rates down to below 1 Hz. These results mark an important step towards the required degree of control over the location of and coupling between quantum dots, necessary for the operation of a large array.
Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so far been limited to a few qubits. Here, to take a step towards larger qubit systems, we tune and coherently control an eight-dot linear array of silicon spin qubits fabricated in a 300~mm CMOS-compatible foundry process, establishing operational scalability beyond the two-qubit regime. All eight qubits are successfully tuned and characterized as four double-dot pairs, exhibiting Ramsey dephasing times T2∗T_2^*T2∗​ up to 41(2) μ~μ μs and Hahn-echo coherence times T2HahnT_2^{\mathrm{Hahn}}T2Hahn​ up to 1.31(4) ~ ms. Readout of the central four qubits is achieved via a cascaded charge-sensing protocol, enabling high-fidelity measurements of the entire multi-qubit array in a two step process. Additionally, we demonstrate a two-qubit gate operation between adjacent qubits with low phase noise. We show that silicon spin qubit arrays can be scaled to medium-sized arrays of 8 qubits while maintaining system coherence.