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arXiv:1006.0953 · Physical Review Letters

Population Inversion in a Single InGaAs Quantum Dot Using the Method of Adiabatic Rapid Passage

Yanwen Wu, I. M. Piper, Matthias Ediger, Peter Brereton, Emma Schmidgall, P. R. Eastham, Maxime Hugues, M. Hopkinson, R. T. Phillips

Published Feb 8, 2011• 114 citations
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Abstract

Preparation of a specific quantum state is a required step for a variety of proposed quantum applications. We report an experimental demonstration of optical quantum state inversion in a single semiconductor quantum dot using adiabatic rapid passage. This method is insensitive to variation in the optical coupling in contrast with earlier work based on Rabi oscillations. We show that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.

DOI
10.1103/physrevlett.106.067401

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Preparation of a specific quantum state is a required step for a variety of proposed quantum applications. We report an experimental demonstration of optical quantum state inversion in a single semiconductor quantum dot using adiabatic rapid passage. This method is insensitive to variation in the optical coupling in contrast with earlier work based on Rabi oscillations. We show that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.
Theoretical investigations for the realization of population inversion of semiconductor quantum dot ground-state transitions by means of adiabatic passage with chirped optical pulses are presented. While the inversion due to Rabi oscillations depends sensitively on the resonance condition, the pulse area, as well as on the absence of carrier scattering and dephasing, we find that adiabatic passage is surprisingly insensitive to the excitation conditions and carrier scattering effects. Quantum kinetic models for the interaction of quantum-dot carriers with longitudinal optical phonons are used to describe carrier scattering and dephasing in the corresponding simulations and allow to quantify the conditions to simultaneously invert an ensamble of quantum dots.
The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust population inversion in a single quantum dot using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.
Adiabatic rapid passage (ARP) is demonstrated in a single In(Ga)As quantum dot (QD) over a wide range of laser tuning relative to the exciton transition energy to assess the level of robustness of this quantum state inversion gate for practical QD systems. Our experiments indicate a drop in exciton inversion by only 5% for a detuning of 9.3 meV, indicating accessible detunings that span the typical inhomogeneous broadening of self-assembled QD ensembles. Our findings indicate that ARP is an ideal control protocol for synchronous triggering of quantum light sources for applications in photonic quantum technology.
The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi-flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust preparation of a quantum state using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance.
We demonstrate a new method to realize the population inversion of a single InGaAs/GaAs quantum dot excited by a laser pulse tuned within the neutral exciton phonon sideband. In contrast to the conventional method of inverting a two-level system by performing coherent Rabi oscillation, the inversion is achieved by rapid thermalization of the optically dressed states via incoherent phonon-assisted relaxation. A maximum exciton population of 0.67±0.06 is measured for a laser tuned 0.83 meV to higher energy. Furthermore, the phonon sideband is mapped using a two-color pump-probe technique, with its spectral form and magnitude in very good agreement with the result of path-integral calculations.