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Conference on Lasers and Electro-Optics

Robust Optical Inversion of the Excitonic Population of InGaAs Quantum Dots via Adiabatic Rapid Passage

Peter Brereton, Yanwen Wu, Isobel Piper, Matthias Ediger, Emma Schmidgall, R. T. Phillips, P. R. Eastham, Maxime Hugues, M. Hopkinson

Published Jan 1, 2011• 0 citations
Publisher

Abstract

We show population inversion in a semiconductor quantum dot with a chirped optical pulse via adiabatic rapid passage. This method is insensitive to variations in the dipole coupling and provides a new tool for preparing ensembles of quantum states.
DOI
10.1364/qels.2011.qmk2

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Preparation of a specific quantum state is a required step for a variety of proposed quantum applications. We report an experimental demonstration of optical quantum state inversion in a single semiconductor quantum dot using adiabatic rapid passage. This method is insensitive to variation in the optical coupling in contrast with earlier work based on Rabi oscillations. We show that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.
Theoretical investigations for the realization of population inversion of semiconductor quantum dot ground-state transitions by means of adiabatic passage with chirped optical pulses are presented. While the inversion due to Rabi oscillations depends sensitively on the resonance condition, the pulse area, as well as on the absence of carrier scattering and dephasing, we find that adiabatic passage is surprisingly insensitive to the excitation conditions and carrier scattering effects. Quantum kinetic models for the interaction of quantum-dot carriers with longitudinal optical phonons are used to describe carrier scattering and dephasing in the corresponding simulations and allow to quantify the conditions to simultaneously invert an ensamble of quantum dots.
The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust population inversion in a single quantum dot using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.
Quantum state preparation through external control is fundamental to established methods in quantum information processing and in studies of dynamics. In this respect, excitons in semiconductor quantum dots are of particular interest, since their coupling to light allows them to be driven into a specified state using the coherent interaction with a tuned optical field, such as an external laser pulse. We propose a protocol, based on adiabatic rapid passage, for the creation of entangled states in an ensemble of pairwise coupled two-level systems, such as an ensemble of coupled quantum dots. We show by quantitative analysis using realistic parameters for semiconductor quantum dots that this method is feasible where other approaches are unavailable. Furthermore, this scheme can be generically transferred to some other physical systems, including circuit QED, nuclear and electron spins in solid-state environments, and photonic coupled cavities.
We study the efficient preparation of the exciton state in a hybrid nanostructure composed by a semiconductor quantum dot and a metallic nanoparticle, when starting from the ground state, using pulses derived with the method of shortcuts to adiabaticity. We show with numerical simulations that high levels of exciton population can be obtained for a wide range of interparticle distances and for short pulse durations. This behavior appears also to be robust against small positioning errors of the system. The fidelity of the population inversion degrades for smaller distances and longer pulses, as the nonlinear terms in the equations, expressing the quantum dot–metal nanoparticle interaction, become stronger and affect the evolution for longer times. The present work is expected to help schemes toward the generation of single photons on demand or ultrafast nanoswitches, where the controlled population inversion in semiconductor quantum dots coupled to metal nanoparticles is an important task.