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Journal of Applied Physics

Fast and robust exciton preparation in a coupled semiconductor quantum dot–metal nanoparticle system using shortcuts to adiabaticity

Αθανάσιος Σμπόνιας, Dionisis Stefanatos, Emmanuel Paspalakis

Published Mar 28, 2021• 18 citations
Publisher

Abstract

We study the efficient preparation of the exciton state in a hybrid nanostructure composed by a semiconductor quantum dot and a metallic nanoparticle, when starting from the ground state, using pulses derived with the method of shortcuts to adiabaticity. We show with numerical simulations that high levels of exciton population can be obtained for a wide range of interparticle distances and for short pulse durations. This behavior appears also to be robust against small positioning errors of the system. The fidelity of the population inversion degrades for smaller distances and longer pulses, as the nonlinear terms in the equations, expressing the quantum dot–metal nanoparticle interaction, become stronger and affect the evolution for longer times. The present work is expected to help schemes toward the generation of single photons on demand or ultrafast nanoswitches, where the controlled population inversion in semiconductor quantum dots coupled to metal nanoparticles is an important task.

DOI
10.1063/5.0046699

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We study the efficient preparation of the exciton state in a hybrid nanostructure composed by a semiconductor quantum dot and a metallic nanoparticle, when starting from the ground state, using pulses derived with the method of shortcuts to adiabaticity. We show with numerical simulations that high levels of exciton population can be obtained for a wide range of interparticle distances and for short pulse durations. This behavior appears also to be robust against small positioning errors of the system. The fidelity of the population inversion degrades for smaller distances and longer pulses, as the nonlinear terms in the equations, expressing the quantum dot–metal nanoparticle interaction, become stronger and affect the evolution for longer times. The present work is expected to help schemes toward the generation of single photons on demand or ultrafast nanoswitches, where the controlled population inversion in semiconductor quantum dots coupled to metal nanoparticles is an important task.
We study the potential for controlled population inversion in a coupled system comprised of a semiconductor quantum dot and a metal nanoparticle. We show that the widely used method of population inversion by a $\ensuremath{\pi}$ pulse can be modified for small interparticle distances. This modification depends strongly on the pulse duration. We also present analytical solutions of the nonlinear density matrix equations, for specific pulse envelopes, which lead to efficient excitonic population inversion in the quantum dot for several distances between the semiconductor quantum dot and the metal nanoparticle.
We consider a hybrid nanostructure composed of a semiconductor quantum dot placed near a spherical metallic nanoparticle, and study the effect of the nanoparticle on the population transferral from the ground to the biexciton state of the quantum dot, when using linearly chirped Gaussian pulses. For various values of the system parameters (biexciton energy shift, pulse area and chirp, interparticle distance), we calculate the final population of the biexciton state by performing numerical simulations of the non-linear density matrix equations which describe the coupled system, as well as its interaction with the applied electromagnetic field. We find that for relatively large values of the biexciton energy shift and not very small interparticle distances, the presence of the nanoparticle improves the biexciton state preparation, since it effectively increases the area of the applied pulse. For smaller biexciton energy shifts and smaller distances between the quantum dot and the nanoparticle, the performance is, in general, degraded. However, even in these cases we can still find ranges of parameter values where the population transfer to the biexciton state is accomplished with high fidelity, when using linearly chirped Gaussian pulses. We anticipate that our results may be exploited for the implementation of novel nanoscale photonic devices or future quantum technologies.
In the present study, we apply shortcut to adiabaticity pulses (time-dependent Rabi frequency and detuning) for the efficient population transfer from the ground to the exciton state in a GaAs/InGaAs quantum dot with phonon-induced dephasing. We use the time-evolving matrix product operator (TEMPO) method to propagate system in time and find that, for temperatures below $ 20 \ \text{K} $ and pulse duration up to $ 10 \ \text{ps} $, a very good transfer efficiency is obtained in general. We explain these results using a Bloch-like equation derived from a generalized Lindblad equation, which adequately describes system dynamics at lower temperatures. For higher temperatures, the transfer efficiency is significantly reduced except for subpicosecond pulses, where the shortcut Rabi frequency reduces to a delta pulse attaining a fast population inversion. The present work is expected to find application in quantum technologies which exploit quantum dots for single-photon generation on demand.
We study ultrafast excitonic population inversion resulting from the interaction of a semiconductor quantum dot (SQD) with localized surface plasmons. The plasmonic enhanced fields are generated when a metallic nanoparticle (MNP) is subject to a nonlinear chirped few-cycle pulse train. By numerically solving the time-dependent Bloch equations beyond the rotating-wave approximation, we show that the complete population inversion can be achieved for small interparticle distance and the dynamic in population inversion exhibits a steplike transition between absorption and amplifying. This phenomenon can be exploited as an all-optical ultrafast switching device. Moreover, the final state of population inversion is shown to be modified significantly with the interparticle distances, which is not only robust against the variation of probe pulse parameters but also suggests a straightforward method for measuring the interparticle distances via probing the final populations.
It is demonstrated how the exciton and the biexciton state of a quantum dot can be prepared with high fidelity on a picosecond time scale by driving the dot with a strong laser pulse that is tuned above the exciton resonance for exciton preparation and in resonance with the exciton transition for biexciton preparation. The proposed protocols make use of the phonon-induced relaxation towards photon dressed states in optically driven quantum dots and combine the simplicity of traditional Rabi oscillation schemes with the robustness of adiabatic rapid passage schemes. Our protocols allow for an on-demand, fast, and almost perfect state preparation even at strong carrier-phonon interaction where other schemes fail. In fact, the performance of the presented protocols is shown to be better the stronger the carrier-phonon interaction is.