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arXiv:1007.2808 · Physical Review Letters

Robust Quantum Dot Exciton Generation via Adiabatic Passage with Frequency-Swept Optical Pulses

Claire‐Marie Simon, Thomas Belhadj, B. Chatel, T. Amand, P. Renucci, Aristide Lemaître, O. Krebs, Paul A. Dalgarno, Richard John Warburton, X. Marie, Bernhard Urbaszek

Published Apr 18, 2011• 127 citations
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Abstract

The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust population inversion in a single quantum dot using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.

DOI
10.1103/physrevlett.106.166801

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The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust population inversion in a single quantum dot using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance. This observation in photoluminescence experiments is made possible by introducing a novel optical detection scheme for the resonant electron hole pair (exciton) generation.
The energy states in semiconductor quantum dots are discrete as in atoms, and quantum states can be coherently controlled with resonant laser pulses. Long coherence times allow the observation of Rabi-flopping of a single dipole transition in a solid state device, for which occupancy of the upper state depends sensitively on the dipole moment and the excitation laser power. We report on the robust preparation of a quantum state using an optical technique that exploits rapid adiabatic passage from the ground to an excited state through excitation with laser pulses whose frequency is swept through the resonance.
We demonstrate electrically controlled robust state preparation of an exciton qubit by rapid adiabatic passage with Fourier-limited laser pulses. In our approach, resonant ps laser pulses are applied to generate excitonic population in a quantum dot, whereas synchronously applied ps electric transients provide a controlled sweep of the exciton transition energy. The ps electric transients applied to the quantum dot in a diode structure result in ultrafast Stark shifts of the exciton energy on time scales below the decoherence time of the exciton. We experimentally demonstrate that the tailored electric chirp of the exciton energy leads to a controlled rapid adiabatic passage, which results in a robust state preparation of the exciton. Our experimental results are confirmed by a theoretical analysis of the chirped coherent manipulation of the exciton two level system. Our approach toward optoelectronic quantum control paves the way for broader applications that require a scalable control of functional coherent systems.
Theoretical investigations for the realization of population inversion of semiconductor quantum dot ground-state transitions by means of adiabatic passage with chirped optical pulses are presented. While the inversion due to Rabi oscillations depends sensitively on the resonance condition, the pulse area, as well as on the absence of carrier scattering and dephasing, we find that adiabatic passage is surprisingly insensitive to the excitation conditions and carrier scattering effects. Quantum kinetic models for the interaction of quantum-dot carriers with longitudinal optical phonons are used to describe carrier scattering and dephasing in the corresponding simulations and allow to quantify the conditions to simultaneously invert an ensamble of quantum dots.
The eect of acoustic phonons on dierent light-induced excitations of a semiconductor quantum dot is investigated.Resonant excitation of the quantum dot leads to the Rabi oscillations, which are damped due to the phonon interaction.When the excitation frequency is detuned, an occupation can only occur due to phonon absorption or emission processes.For frequency-swept excitations a population inversion is achieved through adiabatic rapid passage, but the inversion is also damped by phonons.For all three scenarios the inuence of the phonons depends non-monotonically on the pulse area.
The strong confinement of semiconductor excitons in a quantum dot gives rise to atomlike behavior. The full benefit of such a structure is best observed in resonant excitation where the excited state can be deterministically populated and coherently manipulated. Because of the large refractive index and device geometry it remains challenging to observe resonantly excited emission that is free from laser scattering in III/V self-assembled quantum dots. Here we exploit the biexciton binding energy to create an extremely clean single photon source via two-photon resonant excitation of an InAs/GaAs quantum dot. We observe complete suppression of the excitation laser and multiphoton emissions. Additionally, we perform full coherent control of the ground-biexciton state qubit and observe an extended coherence time using an all-optical echo technique. The deterministic coherent photon pair creation makes this system suitable for the generation of time-bin entanglement and experiments on the interaction of photons from dissimilar sources.